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1. 发明公开

KR1020110024947A 태양 전지 无效
标题翻译：太阳能电池
公开(公告)号：KR1020110024947A
公开(公告)日：2011-03-09
申请号：KR1020090083143
申请日：2009-09-03
申请人： 삼성디스플레이 주식회사 , 삼성에스디아이 주식회사
发明人： 이두열 , 김동섭 , 이진욱 , 고화영
IPC分类号： H01L31/05
CPC分类号： H01L31/068 , H01L31/02245 , Y02E10/547
摘要： PURPOSE: A solar cell is provided to overlap one of contact fixtures which configure a contact fixture group with a frontal electrode even though misalignment of the frontal electrode and the contact fixture occurs, thereby preventing a contact defect between the frontal electrode and a bus bar electrode through the contact fixture. CONSTITUTION: A semiconductor substrate(110) comprises the first semiconductor layer(110a) and the second semiconductor layer(110b) that surrounds the first semiconductor layer. The semiconductor substrate comprises a plurality of contact fixtures(115a) penetrating the substrate. The first electrode(130) is electrically connected to a part with the semiconductor substrate of the first conductive type. The second electrode is electrically connected to the first electrode. The third electrode(150) is formed in the same direction as the second electrode.
摘要翻译：目的：即使发生正面电极和接触固定装置的未对准，也可以使太阳能电池重叠配置接触夹具组与前电极的接触夹具之一，从而防止正面电极与汇流条电极之间的接触缺陷通过接触夹具。构成：半导体衬底（110）包括围绕第一半导体层的第一半导体层（110a）和第二半导体层（110b）。半导体衬底包括穿透衬底的多个接触固定装置（115a）。第一电极（130）与具有第一导电类型的半导体衬底的部分电连接。第二电极电连接到第一电极。第三电极（150）沿与第二电极相同的方向形成。

2. 发明公开

KR1020100111058A 광기전력 변환 소자의 제조 방법 无效
标题翻译：制造光伏器件的方法
公开(公告)号：KR1020100111058A
公开(公告)日：2010-10-14
申请号：KR1020090029431
申请日：2009-04-06
申请人： 삼성디스플레이 주식회사 , 삼성에스디아이 주식회사
发明人： 고화영 , 이두열 , 김윤기
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/18
摘要： PURPOSE: A method for manufacturing a photovoltaic conversion device is provided to prevent a semiconductor substrate from being damaged. CONSTITUTION: A first impurity injection mask(100) is formed on one side of a semiconductor substrate(10). A first impurity region is formed on the semiconductor substrate of one side of the first impurity injection mask. A second impurity injection mask is grown on both sides of the first impurity injection mask to deform the part of the first impurity injection mask. The first impurity injection mask is removed. A second impurity region is formed on the semiconductor substrate by using the second impurity injection mask.
摘要翻译：目的：提供一种用于制造光伏转换装置的方法，以防止半导体衬底受损。构成：在半导体衬底（10）的一侧上形成第一杂质注入掩模（100）。在第一杂质注入掩模的一侧的半导体衬底上形成第一杂质区。在第一杂质注入掩模的两侧生长第二杂质注入掩模，以使第一杂质注入掩模的部分变形。去除第一个杂质注入掩模。通过使用第二杂质注入掩模在半导体衬底上形成第二杂质区。

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