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2. 发明公开

KR1020090093825A 반도체 장치 失效
标题翻译：半导体器件
公开(公告)号：KR1020090093825A
公开(公告)日：2009-09-02
申请号：KR1020090014694
申请日：2009-02-23
申请人： 산켄덴키 가부시키가이샤
发明人： 쿠도,신지 , 히라타,류 , 미야조노,신이치
IPC分类号： H01L29/80
CPC分类号： H01L29/8613 , H01L29/0626 , H01L29/0657 , H01L29/861
摘要： A semiconductor device is provided to prevent the distortion of the semiconductor crystal positioned in the open surface of the PN junction by a chemical process without a dicing for PN junction portion. The first semiconductor region(1) of the first conductor type is formed. The second semiconductor region(2) of the first conductor type has the impurity concentration lower than the impurity concentration of the first semiconductor region. The third semiconductor region(3) of the first conductor type has the impurity concentration higher than the impurity concentration of the second semiconductor region. The fourth semiconductor region(4) is formed in the upper side of the third semiconductor region and the second semiconductor region. The PN junction portion is formed between the second semiconductor region, and the third semiconductor region and fourth semiconductor regions. The second semiconductor area is formed in order to surround the third semiconductor region.
摘要翻译：提供了一种半导体器件，用于通过化学处理来防止位于PN结的开放表面的半导体晶体的失真，而不需要PN结部分的切割。形成第一导体类型的第一半导体区域（1）。第一导体类型的第二半导体区域（2）的杂质浓度低于第一半导体区域的杂质浓度。第一导体类型的第三半导体区域（3）的杂质浓度高于第二半导体区域的杂质浓度。第四半导体区域（4）形成在第三半导体区域和第二半导体区域的上侧。 PN结部分形成在第二半导体区域与第三半导体区域和第四半导体区域之间。形成第二半导体区域以便围绕第三半导体区域。

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