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    • 4. 发明公开
    • LPCVD 장치 및 박막 제조방법
    • LPCVD装置和薄膜沉积方法
    • KR1020030052240A
    • 2003-06-26
    • KR1020020067651
    • 2002-11-02
    • 다나까 홀딩스 가부시끼가이샤
    • 사이토마사유키
    • H01L21/205
    • PURPOSE: An LPCVD(Low Pressure Chemical Vapor Deposition) apparatus and a thin film deposition method are provided to be capable of collecting organic metal compounds from used raw materials with a trap which can recycle more metal compounds without increasing the trap capacity. CONSTITUTION: An LPCVD apparatus includes a vessel body, a heating unit, a reactor, an evacuation pump and a trap for cooling the used raw gas for the reactor. The vessel body accommodates metal compounds as raw materials. The heating unit heats the vessel body to vaporize the organic metal compounds into raw gas. The reactor stores a substrate with a thin film deposited thereon. The evacuation pump keeps the reactor at a low pressure atmosphere. The trap has a cylinder having a honeycomb structure in a flow passage through which the used raw materials flow.
    • 目的:提供LPCVD(低压化学气相沉积)设备和薄膜沉积方法,以便能够从具有捕集器的收集器中收集有机金属化合物,所述阱可以循环更多的金属化合物而不增加捕集能力。 构成:LPCVD装置包括容器主体,加热单元,反应器,抽空泵和用于冷却用于反应器的废气的捕集阱。 容器主体容纳金属化合物作为原料。 加热单元加热容器体,将有机金属化合物蒸发成原料气体。 反应器存储其上沉积有薄膜的衬底。 排气泵将反应器保持在低压气氛。 捕集器具有在所使用的原料流过的流动通道中具有蜂窝结构的圆筒。