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1. 发明公开

KR1020130092458A 피가공물의 분할 방법 审中-实审
标题翻译：分工工作方法
公开(公告)号：KR1020130092458A
公开(公告)日：2013-08-20
申请号：KR1020130012489
申请日：2013-02-04
申请人： 가부시기가이샤 디스코
发明人： 핫토리아츠시 , 가와구치요시히로 , 요도요시아키
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L21/6836
摘要： PURPOSE: A processed article division method is provided to accurately prevent the reconnection of DAF or damage to a chip by preventing the connection of the DAF. CONSTITUTION: A processed article (11) is formed according to a division prediction line. The processed article is attached to an adhesive tape (T) including an adhesive layer (Tn) on a surface. The processed article is attached to a ring shaped frame (F) through the adhesive tape. The processed article is arranged on a maintenance table (61) through the adhesive tape. A plurality of chips (15A) is formed by dividing the processed articles according to the division prediction line. [Reference numerals] (67) Absorption source
摘要翻译：目的：通过防止DAF的连接，提供加工制品分割方法，以准确防止DAF重新连接或损坏芯片。构成：根据分割预测线形成加工品（11）。被处理物品附着在表面上包括粘合剂层（Tn）的粘合带（T）上。经处理的物品通过胶带连接到环形框架（F）上。经处理的物品通过胶带布置在维护台（61）上。通过根据划分预测线分割处理物品形成多个芯片（15A）。（附图标记）（67）吸收源

2. 发明授权

KR101217002B1 가공 장치 및 가공 방법 有权
标题翻译：加工设备和加工方法
公开(公告)号：KR101217002B1
公开(公告)日：2012-12-31
申请号：KR1020060046114
申请日：2006-05-23
申请人： 가부시기가이샤 디스코
发明人： 고가네야도모히코 , 가와구치요시히로 , 다바타도쿠노리
IPC分类号： B24B37/04 , B24B53/017 , B24B57/00 , H01L21/304
摘要： 본발명은장치의대형화를방지하는동시에, 반도체웨이퍼의연삭공정이종료되자마자연마공정을개시할수 있도록하여스루풋을향상시킬수 있는가공장치및 이것을이용한가공방법을제공한다. 본발명에관한가공장치(1)는피가공물(50)을지지하는척(chuck) 테이블(9)과, 연마패드(5b)와가공액공급수단(8)을가지고, 연마패드(5b)를척 테이블(9)에지지된피가공물(50)의위쪽으로부터접촉시켜피가공물(50)을연마하는연마수단(5)과, 피가공물(50)의연마위치에위치하는척 테이블(9)의근방에설치되고, 연마패드(5b)의표면을아래쪽으로부터세정하는연마패드세정수단(40)을구비하고, 연마수단(5)은척 테이블(9)에지지된피가공물(50)의가공면에연마액을공급하면서화학적및 기계적으로연마하고, 연마패드세정수단(40)은연마패드(5b)의직경방향으로상대이동하면서연마패드(5b)의표면을세정한다.

3. 发明公开

KR1020060128643A 가공 장치 및 가공 방법 有权
标题翻译：加工设备和加工方法
公开(公告)号：KR1020060128643A
公开(公告)日：2006-12-14
申请号：KR1020060046114
申请日：2006-05-23
申请人： 가부시기가이샤 디스코
发明人： 고가네야도모히코 , 가와구치요시히로 , 다바타도쿠노리
IPC分类号： B24B37/04 , B24B53/017 , B24B57/00 , H01L21/304
CPC分类号： B24B37/04 , B24B27/0023 , B24B27/0069 , B24B53/017 , B24B57/02
摘要： A processing apparatus and a processing method are provided to achieve improved throughput by starting a polishing process immediately after ending of a semiconductor wafer grinding process. A processing apparatus(1) comprises a chuck table, a polishing unit(5) and a polishing pad cleaning unit. The chuck table supports an object to be processed. The polishing unit includes a polishing pad(5b) having a diameter larger than that of the object to be processed, and a process liquid supply unit(8) for selectively supplying a polishing liquid and a washing liquid. The polishing unit polishes the object by permitting the polishing pad to contact the object on the chuck table from above. The polishing pad cleaning unit is arranged in the vicinity of the chuck table, and cleans a surface of the polishing pad from beneath. The polishing unit chemically and mechanically polishes the object while supplying a polishing liquid to the surface of the object supported on the chuck table. The polishing pad cleaning unit cleans the surface of the polishing pad while moving relatively to the polishing pad in a diameter direction of the polishing pad.
摘要翻译：提供一种处理装置和处理方法，以在半导体晶片研磨过程结束后立即开始抛光处理来实现提高的生产率。处理装置（1）包括卡盘台，抛光单元（5）和抛光垫清洁单元。卡盘表支持要处理的对象。抛光单元包括直径大于待处理物体的抛光垫（5b），以及用于选择性地供应抛光液和洗涤液的处理液供给单元（8）。抛光单元通过允许抛光垫从上方与卡盘台上的物体接触来抛光物体。抛光垫清洁单元布置在卡盘台附近，并从下面清洁抛光垫的表面。抛光单元在将抛光液体供给到支撑在卡盘台上的物体的表面上时化学和机械抛光物体。抛光垫清洁单元在抛光垫的直径方向相对于抛光垫移动的同时清洁抛光垫的表面。

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