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    • 75. 发明公开
    • 반도체기판의 세정방법
    • 清洗半导体基板的方法
    • KR1020030092675A
    • 2003-12-06
    • KR1020020030416
    • 2002-05-30
    • 삼성전자주식회사
    • 한동균고형호김영준박기종
    • H01L21/304
    • H01L21/02065B08B7/00
    • PURPOSE: A method for cleaning a semiconductor substrate is provided to prevent a metal layer from being corroded or etched even if the semiconductor substrate includes a tungsten layer by eliminating organic residue as contaminant of the semiconductor substrate while using ozone gas and deionized water vapor. CONSTITUTION: The semiconductor substrate is introduced to the inside of a cleaning chamber(S210). Ozone gas and deionized water vapor are induced to the inside of the cleaning chamber to remove the organic residue(S220). The semiconductor substrate is drawn out from the cleaning chamber(240).
    • 目的:提供一种用于清洁半导体衬底的方法,以便即使半导体衬底通过在使用臭氧气体和去离子水蒸汽的同时通过消除作为半导体衬底的污染物的有机残留物而包含钨层来防止金属层被腐蚀或蚀刻。 构成:半导体衬底被引入到清洁室的内部(S210)。 将臭氧气体和去离子水蒸汽引入清洁室内部以除去有机残余物(S220)。 半导体衬底从清洁室240中抽出。
    • 78. 发明公开
    • 기판의 처리방법 및 처리 장치
    • 基板处理方法及其设备
    • KR1020020081213A
    • 2002-10-26
    • KR1020027006775
    • 2001-06-12
    • 미쓰비시덴키 가부시키가이샤시마다리카고교가부시끼가이샤
    • 노다세이지호리베히데오미야모토마코토오야이즈미구즈모토마사키
    • H01L21/306
    • H01L21/02071B08B7/00H01L21/31133H01L21/67051
    • 본발명은습윤오존함유가스와염기성가스를함유하는혼합가스에의해기판표면상의유기오염물질을제거하는기판의처리방법으로서, 염기성가스의도입량을제어함으로써기판상에미리형성된금속배선의부식을완전히억제하고, 유기오염물질을제거하는기판의처리방법및 처리장치를제공한다. 또한, 본발명의기판처리장치는기판의온도를실온보다높은온도로유지시키기위한기판가열수단(4); 습윤오존함유가스를수득하기위한습윤수단(7); 상기기판표면의피처리물에습윤오존함유가스를공급하기위한공급수단(5); 상기습윤수단과공급수단을접속시키는송기관(8); 상기기판표면의피처리물에염기성가스함유가스를공급하기위한공급수단(18); 및상기습윤수단, 공급수단, 및송기관을각각상기기판의온도이상으로가열하기위한가스가열수단(9)을포함한다.
    • 提供一种通过使用含湿臭氧的气体和碱性气体的混合气体去除基板表面上的有机污染物来处理基板的方法,其中控制碱性气体的引入量,从而完全防止金属的腐蚀 预先形成在基板上的布线及其装置。 本发明的基板处理装置包括用于将基板保持在高于室温的基板加热装置(4),用于获得含湿臭氧的气体的润湿装置(7),用于 向基材表面上的待处理物质供给含湿臭氧的气体,用于连接润湿装置和供给装置的送气管(8),用于将碱性气体气体供给至物质的供给装置 在基板表面上处理的气体加热装置(9),用于将每个润湿装置,供给装置和送气管加热到等于或高于基板的温度的气体加热装置(9)。
    • 79. 发明公开
    • 자기장을 이용한 관석제거장치
    • 使用磁场的电子去角度测量装置
    • KR1020010025767A
    • 2001-04-06
    • KR1019990030879
    • 1999-07-28
    • 손창현김원대
    • 손창현김원대
    • F28G13/00
    • F28G13/00B08B6/00B08B7/00B08B9/027
    • PURPOSE: An electronic de-scaling apparatus using magnetic field is provided to achieve a de-scaling operation even at the velocity lower than a threshold level. CONSTITUTION: A method of winding a lead wire along an outer wall of a pipeline is characterized in that the ion passing through the portion wounded with the lead wire has a flow direction which is maintained perpendicular to the direction of magnetic field, to thereby allow ions to have maximum force. Thus, Lorentz force is generated even at the velocity lower than a threshold level where a micro vibration does not occur. Accordingly, ions are provided with an energy permitting calcite structure, thus preventing fouling from being deposited at the wall of the pipeline.
    • 目的:提供使用磁场的电子缩放装置,即使在低于阈值水平的速度下也能实现去缩放操作。 构成:沿着管线的外壁卷绕引线的方法的特征在于,穿过受引线缠绕的部分的离子具有垂直于磁场方向的流动方向,从而允许离子 有最大的力量。 因此,即使在低于不发生微振动的阈值水平的速度下也产生洛伦兹力。 因此,离子具有能量允许的方解石结构,从而防止污物沉积在管道的壁处。