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    • 62. 发明公开
    • 이동통신 시스템에서 이종망간 핸드오버를 위한 장치 및방법
    • 移动通信系统异构网络之间切换的装置和方法
    • KR1020080049302A
    • 2008-06-04
    • KR1020060119719
    • 2006-11-30
    • 삼성전자주식회사
    • 김광식김정대강현구조중근
    • H04W92/02H04B7/26H04L29/06
    • H04W36/005H04W36/0016H04W36/14H04W80/00H04W84/14H04W92/02
    • An apparatus and a method for handover between heterogeneous networks in a mobile communication system are provided to transmit corresponding information by using a defined event when the topology of a wireless communication network changes as a repeater or a mesh node moves in the wireless communication network, thereby enabling a terminal to perform the handover more efficiently between the heterogeneous networks. A method for processing a link event in a broadband wireless communication network comprises the following steps of: checking whether network topology changes according to the movement of a mobile repeater(600); generating a link event for the change of the link event(602); generating an MIH(Media Independent Handover) event for the change of the topology(604); transmitting changed topology configuration information to an MIH information server(606); and maintaining the latest network topology information(608).
    • 提供移动通信系统中的异构网络之间切换的装置和方法,用于当无线通信网络的拓扑结构随着中继器或网状节点在无线通信网络中移动时,通过使用定义的事件来发送相应的信息,从而 使得终端能够在异构网络之间更有效地执行切换。 一种用于处理宽带无线通信网络中的链路事件的方法,包括以下步骤:根据移动中继器(600)的移动来检查网络拓扑是否发生变化; 生成链接事件改变的链接事件(602); 生成用于改变拓扑的MIH(媒体独立切换)事件(604); 将改变的拓扑配置信息发送到MIH信息服务器(606); 并维护最新的网络拓扑信息(608)。
    • 63. 发明公开
    • 무선 통신 시스템에서 제어국 선택 방법
    • 在无线通信系统中选择控制站的方法
    • KR1020070084866A
    • 2007-08-27
    • KR1020060017196
    • 2006-02-22
    • 삼성전자주식회사
    • 김광식윤수웅이효진장병기
    • H04W48/06H04W88/08H04W88/12H04L12/28
    • A control station selection method in a wireless communication system is provided to enable an RAS(Radio Access Station) to receive a recommended ACR(Access Control Router) list from an ACR and to conduct a call processing action by selecting an optimum ACR, thereby effectively executing network entering and DSA(Dynamic Service Addition) processes. A recommended ACR list including at least one piece of ACR information is received from an NMS(Network Management System) taking charge of maintenance of ACRs and an RAS(502,504). A particular ACR is selected by considering priority described in the list(506). Capability negotiation is conducted with the selected particular ACR(508). If the capability negotiation is successful, a call processing action is performed with the particular ACR(510,512).
    • 提供无线通信系统中的控制台选择方法,使得RAS(无线接入站)能够从ACR接收推荐的ACR(接入控制路由器)列表,并通过选择最佳ACR来进行呼叫处理动作,从而有效地 执行网络进入和DSA(动态服务添加)过程。 从负责维护ACR和RAS(网络管理系统)的网管(网管系统)收到至少包含一条ACR信息的ACR列表(502,504)。 通过考虑列表(506)中描述的优先级来选择特定ACR。 使用所选择的特定ACR进行能力协商(508)。 如果能力协商成功,则用特定ACR(510,512)执行呼叫处理动作。
    • 65. 发明公开
    • 웨이퍼 재검사 장치
    • 通过使用光学显微镜和原子力显微镜检查波形缺陷的抛光装置
    • KR1020050004551A
    • 2005-01-12
    • KR1020030044779
    • 2003-07-03
    • 삼성전자주식회사
    • 김경호김광식
    • H01L21/66
    • G01Q30/025G01Q30/04
    • PURPOSE: A wafer review apparatus is provided to perform rapidly a process for reviewing defects of a wafer by using an optical microscope and an atomic force microscope. CONSTITUTION: A storage unit(200) stores a defect map received from a wafer inspection system. An optical microscope(300) is used for reviewing defects on the defect map by using an object lens and an eyepiece. An atomic force microscope(400) reviewing defects on the defect map in atom units by using a cantilever. An input unit(500) selects one of the optical microscope and the atomic force microscope. A display unit(600) forms the defects as images. A stage(700) is used for supporting the wafer having the defects. A control unit(800) controls the storage unit, the optical microscope, the atomic force microscope, the input unit, the display unit, and the stage.
    • 目的:提供一种晶片检查装置,用于通过使用光学显微镜和原子力显微镜快速执行用于检查晶片缺陷的处理。 构成:存储单元(200)存储从晶片检查系统接收的缺陷图。 光学显微镜(300)用于通过使用物镜和目镜来检查缺陷图上的缺陷。 原子力显微镜(400)通过使用悬臂来检查原子单元上的缺陷图上的缺陷。 输入单元(500)选择光学显微镜和原子力显微镜中的一个。 显示单元(600)作为图像形成缺陷。 级(700)用于支撑具有缺陷的晶片。 控制单元(800)控制存储单元,光学显微镜,原子力显微镜,输入单元,显示单元和台。
    • 66. 发明公开
    • 반도체 소자 제조에 사용되는 노즐 장치
    • 用于制造半导体器件的喷嘴装置
    • KR1020040042186A
    • 2004-05-20
    • KR1020020070355
    • 2002-11-13
    • 삼성전자주식회사
    • 김일우김광식
    • H01L21/00
    • PURPOSE: A nozzle apparatus for manufacturing a semiconductor device is provided to restrain the reaction gas supplied to a chamber from being heated in a flow path by forming a groove between the outer wall of a nozzle pipe and the flow path. CONSTITUTION: A nozzle apparatus for manufacturing a semiconductor device is provided with a nozzle housing(120) having a hole(121) at its inner portion and a nozzle pipe(122) inserted into the hole. The nozzle pipe has a flow path(123) and at least one groove(124) between the flow path and the outer wall of the nozzle pipe for enclosing the flow path. The nozzle apparatus further includes a gas supply pipe(125) connected with the nozzle pipe for supplying gas to the flow path and a heat insulating part inserted into the groove.
    • 目的:提供一种用于制造半导体器件的喷嘴装置,用于通过在喷嘴管的外壁和流路之间形成凹槽来限制供应到腔室的反应气体在流路中被加热。 构成:用于制造半导体器件的喷嘴装置设置有在其内部具有孔(121)的喷嘴壳体(120)和插入孔中的喷嘴管(122)。 喷嘴管具有在流路和喷嘴管的外壁之间的流路(123)和至少一个凹槽(124),用于封闭流路。 喷嘴装置还包括与用于向流路供给气体的喷嘴管连接的气体供给管(125)和插入到槽中的绝热部。
    • 67. 发明授权
    • 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
    • 在这种情况下,我们可以为您的工作提供最佳的解决方案。
    • KR100375102B1
    • 2003-03-08
    • KR1020000061264
    • 2000-10-18
    • 삼성전자주식회사
    • 이희태박윤세김광식김종우
    • H01L21/205
    • B08B7/00B08B7/0035C23C16/4401C23C16/4405Y10T137/7724
    • An apparatus and a method for performing a chemical vapor deposition process that reduces particle contamination of a wafer, wherein a cleaning gas including a fluorine radical is introduced into the process chamber to clean the chamber. After loading a wafer in the process chamber, a deposition gas is introduced into the chamber to form a film on the wafer. An inert gas as a back flow-preventing gas is introduced into the process chamber through a cleaning gas supply line to prevent the deposition gas from flowing back toward the cleaning gas supply line. Thus, the cleaning gas supply line is prevented from being contaminated by the deposition gas and particle formation on the wafer during deposition of the film is reduced, so that yield and reliability of the semiconductor device may be improved.
    • 一种用于执行化学气相沉积工艺的设备和方法,所述化学气相沉积工艺减少晶片的颗粒污染,其中将包含氟自由基的清洁气体引入到处理室中以清洁室。 在处理室中装载晶片之后,沉积气体被引入到室中以在晶片上形成膜。 通过清洁气体供应管线将惰性气体作为回流防止气体引入到处理室中,以防止沉积气体回流到清洁气体供应管线。 因此,可以防止清洁气体供应管线被沉积气体污染,并且在沉积薄膜期间晶片上的颗粒形成减少,从而可以提高半导体器件的成品率和可靠性。
    • 68. 发明公开
    • 반도체장치 제조용 공정설비
    • 制造半导体器件的工艺设备
    • KR1020000020886A
    • 2000-04-15
    • KR1019980039677
    • 1998-09-24
    • 삼성전자주식회사
    • 김광식
    • H01L21/20
    • PURPOSE: A process equipment for fabricating a semiconductor device is provided to prevent a pressure state of a quartz chamber from changing caused by attack resulting from repeated contact of a teflonring with a chuck thereunder. CONSTITUTION: A processing equipment for fabricating a semiconductor device comprises a quartz chamber(20), a teflonring(22), a chuck(24), and a supporter(28). A semiconductor fabricating process is performed in the quartz chamber(20). The chuck(24) inserts and ejaculates a wafer in the quartz chamber(20) by performing up-and-down movement under the teflonring(22) closely adhered to a lower portion of the quartz chamber(20). The supporter(24) contacts with the chuck under the teflonring.
    • 目的:提供一种用于制造半导体器件的工艺设备,以防止石英腔的压力状态由于特氟龙与卡盘的重复接触而引起的攻击。 构成:用于制造半导体器件的加工设备包括石英腔(20),特氟龙(22),卡盘(24)和支撑件(28)。 在石英室(20)中进行半导体制造工艺。 卡盘(24)通过在紧密粘附到石英室(20)的下部的特氟隆(22)下进行上下运动,将晶片插入并喷射在石英室(20)中。 支撑件(24)在特氟龙下与卡盘接触。