专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明公开

KR1020030002793A 반도체 소자의 제조 방법 失效
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020030002793A
公开(公告)日：2003-01-09
申请号：KR1020010038502
申请日：2001-06-29
申请人： 에스케이하이닉스 주식회사
发明人： 김종국 , 김재헌 , 오상룡
IPC分类号： H01L27/10
摘要： PURPOSE: A method for fabricating a semiconductor device is provided to prevent residue in a tungsten etch-back process by guaranteeing an inclined profile in a plate poly etch process so that the profile of an interface between a cell and a periphery is gently sloped in a subsequent process. CONSTITUTION: After a gate line(22) and a bitline(23) are formed on a semiconductor substrate(21) having a cell region and a peripheral circuit region, a storage node contact process is performed. A barrier nitride layer(24) and a capacitor oxide layer(25) for defining a storage node(26) are sequentially formed on the resultant structure. The capacitor oxide layer is selectively patterned. The storage node, a dielectric layer and a plate poly layer are formed. A photoresist pattern layer is formed on the plate poly layer and a flow process is performed to form an inclined photoresist pattern layer whose edge portion is inclined. The exposed plate poly layer is selectively etched to make the edge portion of the exposed plate poly layer have a slope. An oxide layer(29) is formed on the resultant structure and a metal contact plug layer(31a) is formed by using a metal contact mask.
摘要翻译：目的：提供一种用于制造半导体器件的方法，以通过在平板多晶刻蚀工艺中保证倾斜的轮廓来防止钨蚀刻工艺中的残留物，使得电池和外围之间的界面的轮廓在后续流程。构成：在具有单元区域和外围电路区域的半导体衬底（21）上形成栅极线（22）和位线（23）之后，执行存储节点接触处理。在所得到的结构上顺序地形成用于限定存储节点（26）的势垒氮化物层（24）和电容器氧化物层（25）。电容器氧化物层被选择性地图案化。形成存储节点，电介质层和板状多层。在多层板上形成光致抗蚀剂图案层，并且进行流程以形成其边缘部分倾斜的倾斜光致抗蚀剂图案层。选择性地蚀刻暴露的板状多层以使露出的多晶硅层的边缘部分具有斜率。在所得结构上形成氧化物层（29），通过使用金属接触掩模形成金属接触塞层（31a）。

IPRDB

热门服务

关于我们

友情链接

联系方式