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    • 57. 发明公开
    • 신규의 갈륨 알콕사이드 화합물 및 그 제조방법
    • 新型烷氧基铝络合物及其制备方法
    • KR1020100054313A
    • 2010-05-25
    • KR1020080113183
    • 2008-11-14
    • 한국화학연구원
    • 정택모김창균이영국안기석이선숙정인경
    • C01G15/00
    • PURPOSE: Novel gallium alkoxide compounds and a preparing method thereof are provided, which makes manufacture of the pure gallium oxide possible in the low temperature. CONSTITUTION: A gallium alkoxide compound is represented as the chemical formula 1, Ga[O-A-NR^1R^2]_x[R^3]_3-x. In the chemical formula 1, A is alkylene of C2-C5, A is substituted for linear or branched alkyl of one or more C1-C5, R^1 to R^3 are each other independently linear or the branched alkyl of C1-C5, X is fixed number of 1 to 3. The manufacturing method of the gallium alkoxide compound of the chemical formula 1 is to react the gallium compound of the chemical formula 3, GaR^3_3 and alcohol of chemical formula 4, HO-A-NR^1R^2.
    • 目的:提供新型的烷氧化镓化合物及其制备方法,这使得纯氧化镓在低温下的制造成为可能。 构成:烷氧基铝化合物以化学式1表示,Ga [O-A-NR] 1R ^ 2] _x [R ^ 3] _3-x。 在化学式1中,A是C 2 -C 5的亚烷基,A代替一个或多个C 1 -C 5的直链或支链烷基,R 1至R 3各自独立地为直链或C1-C5的支链烷基 X为1〜3的固定数。化学式1的烷氧化镓化合物的制造方法是使化学式3的镓化合物,GaR 3 3 3和化学式4的醇HO-A-NR ^ 1R ^ 2。
    • 58. 发明公开
    • 신규의 알루미늄 아미노 알콕사이드 화합물 및 그 제조 방법
    • 新型氨基磺酸铝复合物及其制备方法
    • KR1020100024568A
    • 2010-03-08
    • KR1020080083183
    • 2008-08-26
    • 한국화학연구원
    • 정택모김창균이영국안기석이선숙박민정
    • C07F5/06C07F5/00
    • C07F19/00C23C16/403C23C16/45525
    • PURPOSE: A method for preparing an aluminum amino alkoxide compound is provided to be used as a raw material for thin film deposition or alloy deposition. CONSTITUTION: An aluminum amino alkoxide compound is denoted by chemical formula 1(Al[O-A-NR^1R^2]2[NR^3_2]). A method for preparing the aluminum amino alkoxide compound comprises: a step of reacting an alkali metal salt of chemical formula 4(MO-A-NR^1R^2) with an aluminum compound of chemical formula 3(AlX3) to obtain a compound of chemical formula 5(Al[O-A-NR^1R^2]2X); and a step of reacting an alkali metal salt of chemical formula 6(MNR^3_2) with the compound of chemical formula 5. The aluminum amino alkoxide compound is also prepared by reacting an amino alcohol compound of chemical formula 8(HO-A-NR^1R^2) with an aluminum amide compound of chemical formula 7(Al[NR^3_2]3).
    • 目的:提供一种制备铝氨基醇盐化合物的方法,用作薄膜沉积或合金沉积的原料。 构成:铝氨基醇盐化合物由化学式1(Al [O-A-NR] 1R ^ 2] 2 [NR 3] 2]表示。 制备铝氨基醇盐化合物的方法包括:使化学式4的碱金属盐(MO-A-NR 1 1R 2)与化学式3的铝化合物(AlX 3)反应的步骤,得到 化学式5(Al [OA-NR] 1R ^ 2] 2X); 和化学式6(MNR 3/3)的碱金属盐与化学式5的化合物反应的步骤。铝氨基醇盐化合物也可通过使化学式8的氨基醇化合物(HO-A-NR (1R [3'])与化学式7的铝酰胺化合物(Al [NR 3] 2)3)。
    • 59. 发明公开
    • 신규의 인듐 아미노알콕사이드 화합물 및 그 제조 방법
    • 新型氨基烷氧基复合物及其制备方法
    • KR1020100024558A
    • 2010-03-08
    • KR1020080083172
    • 2008-08-26
    • 한국화학연구원
    • 정택모김창균이영국안기석이선숙
    • C07F5/00B82B3/00
    • C07F5/00B82B3/00C23C16/40C23C16/45525
    • PURPOSE: A novel indium amino alkoxide compound is provided to prepare thin film deposition or various alloys. CONSTITUTION: An indium amino alkoxide compound is denoted by chemical formula 1, (In[O-A-NR^1R^2]2[NR^3_2]). In chemical formula 1, A is C2-C5 alkylene; R^1 and R^2 are dependently hydrogen or C1-C5 linear or branched alkyl group; and R^3 is C1-C5 linear or branched alkyl group or tri(C1-C5)alkylsilyl group. A method for preparing an indium amino alkoxide compound comprises: a step of reacting alkali metal salt of chemical formula 4(MO-A-NR^1R^2) with an indium compound of chemical formula 2(InX3) to obtain a compound of chemical formula 5(In[O-A-NR^1R^2]2X); and a step of reacting the compound of chemical formula 5 with alkali metal salt of chemical formula 6(MNR^3_2). A thin film and nanomaterial containing indium are prepared using the compound of chemical formula 1 as a precursor. The thin film containing the indium is formed through chemical vapor deposition(MOCVD) or atomic layer deposition(ALD).
    • 目的:提供新型的铟氨基醇盐化合物以制备薄膜沉积或各种合金。 构成:铟氨基醇盐化合物由化学式1(In [O-A-NR ^ 1R ^ 2] 2 [NR 3/3]]表示。 在化学式1中,A是C 2 -C 5亚烷基; R 1和R 2分别是氢或C 1 -C 5直链或支链烷基; 且R 3为C 1 -C 5直链或支链烷基或三(C 1 -C 5)烷基甲硅烷基。 制备铟氨基烷氧基化合物的方法包括:使化学式4的碱金属盐(MO-A-NR 1 1R 2)与化学式2的铟化合物(InX 3)反应得到化学式 式5(In [OA-NR 1 1R 2] 2X); 和使化学式5的化合物与化学式6的碱金属盐(MNR 3 3)反应的步骤。 使用化学式1的化合物作为前体制备含有铟的薄膜和纳米材料。 通过化学气相沉积(MOCVD)或原子层沉积(ALD)形成含有铟的薄膜。