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41. 发明公开

KR1020110024471A 이미지 센서의 제조방법 无效
标题翻译：图像传感器制造方法
公开(公告)号：KR1020110024471A
公开(公告)日：2011-03-09
申请号：KR1020090082479
申请日：2009-09-02
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L21/02068 , H01L27/1462 , H01L27/14685
摘要： PURPOSE: A method for manufacturing an image sensor is provided to improve an optical property by shortening a focal length between a micro lens and a photo diode. CONSTITUTION: An interlayer dielectric layer including a wiring and a pad is formed on a semiconductor substrate. A light receiving unit(130) is formed on the interlayer dielectric layer to be connected to the wiring. A protection layer is formed on the light receiving unit and the interlayer dielectric layer. A color filter(170) is formed on the light receiving unit. A micro lens is formed on the color filter. A pad open hole(210) is formed by selectively removing the interlayer dielectric layer and the protection layer on the upper side of the pad.
摘要翻译：目的：提供一种用于制造图像传感器的方法，通过缩短微透镜和光电二极管之间的焦距来改善光学特性。构成：在半导体衬底上形成包括布线和焊盘的层间绝缘层。在与布线连接的层间绝缘层上形成光接收单元（130）。在受光单元和层间电介质层上形成保护层。在光接收单元上形成滤色器（170）。在滤色器上形成微透镜。通过选择性地去除衬垫上侧的层间电介质层和保护层来形成焊盘开孔（210）。

42. 发明公开

KR1020100077368A 씨모스 이미지 센서의 제조 방법 无效
标题翻译： CMOS图像传感器的制作方法
公开(公告)号：KR1020100077368A
公开(公告)日：2010-07-08
申请号：KR1020080135286
申请日：2008-12-29
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L21/31144 , H01L21/0273 , H01L27/1462 , H01L27/14685
摘要： PURPOSE: A manufacturing method of a CMOS image sensor is provided to prevent the undercut by improving adhesive force between a photoresist and an interlayer insulating film. CONSTITUTION: A plurality of photo diodes(12) with a uniform interval are formed in a semiconductor substrate(10). An interlayer insulating film(14) is formed in front of the semiconductor substrate including the photo diode. A photoresist is formed in the front of interlayer insulating film. A hard bake is executed on the photoresist. A photoresist pattern(16) is formed by executing an exposure and development on the photoresist.
摘要翻译：目的：提供CMOS图像传感器的制造方法，以通过改善光致抗蚀剂和层间绝缘膜之间的粘合力来防止底切。构成：在半导体衬底（10）中形成具有均匀间隔的多个光电二极管（12）。在包括光电二极管的半导体衬底的前面形成层间绝缘膜（14）。在层间绝缘膜的前面形成有光致抗蚀剂。在光致抗蚀剂上进行硬烘烤。通过在光致抗蚀剂上进行曝光和显影来形成光致抗蚀剂图案（16）。

43. 发明公开

KR1020100077363A 씨모스 이미지 센서의 제조 방법 无效
标题翻译： CMOS图像传感器的制作方法
公开(公告)号：KR1020100077363A
公开(公告)日：2010-07-08
申请号：KR1020080135281
申请日：2008-12-29
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14687
摘要： PURPOSE: A manufacturing method of a CMOS image sensor is provided to control plasma damage by executing a process by mixing a dry etching method and a wet etching method. CONSTITUTION: A plurality of photo diodes(12) are formed on a semiconductor substrate(10). An interlayer insulating film(14) is formed on the front of the semiconductor substrate. A hard mask film(16) is formed in the front of the interlayer insulating film. A photoresist pattern is formed on the hard mask film. The hard mask film is etched through a first etching process which uses the photoresist pattern as a mask. The interlayer insulating film is selectively etched through a second etching process which uses the etched hard mask film as a mask.
摘要翻译：目的：提供CMOS图像传感器的制造方法，通过混合干法蚀刻法和湿蚀刻法进行处理来控制等离子体损伤。构成：在半导体衬底（10）上形成多个光电二极管（12）。在半导体衬底的前面形成有层间绝缘膜（14）。硬掩模膜（16）形成在层间绝缘膜的前面。在硬掩模膜上形成光致抗蚀剂图案。通过使用光致抗蚀剂图案作为掩模的第一蚀刻工艺来蚀刻硬掩模膜。通过使用蚀刻的硬掩模膜作为掩模的第二蚀刻工艺来选择性地蚀刻层间绝缘膜。

44. 发明授权

KR100967479B1 반도체 소자의 제조 방법 失效
标题翻译：制造半导体器件的方法
公开(公告)号：KR100967479B1
公开(公告)日：2010-07-07
申请号：KR1020070135987
申请日：2007-12-24
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146 , H01L21/336 , H01L21/24
CPC分类号： H01L29/6656 , H01L27/14603 , H01L27/14612 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： 실시예는 반도체 소자의 제조 방법에 관한 것이다. 실시예에 따른 반도체 소자의 제조 방법은, 반도체 기판 상에 게이트 전극을 형성하는 단계, 상기 게이트 전극이 형성된 상기 반도체 기판 상에 제 1 산화막, 질화막 및 제 2 산화막을 순차적으로 형성하는 단계, 상기 제 2 산화막을 건식 식각하는 단계, 상기 질화막을 습식 식각하는 단계 및 상기 제 1 산화막이 형성된 상기 반도체 기판에 이온주입하여 상기 게이트 전극 양측에 소스 및 드레인 영역을 형성하는 단계를 포함하는 것을 특징으로 한다. 실시예는 반도체 소자에서 게이트 스페이서를 형성할 때 실리사이드층 상에 잔류 산화막을 형성하여 플라즈마 데미지 및 누설 전류를 방지할 수 있으므로 씨모스 이미지 센서의 소자 특성을 향상시킬 수 있다.
게이트 스페이서, 임플란트
摘要翻译：一个实施例涉及一种制造半导体器件的方法。一种用于制造根据本实施例的半导体器件的方法包括：形成在半导体基板上的栅极电极，在形成第一氧化物膜，氮化物膜和所述半导体衬底和所述栅极电极上的第二氧化膜的步骤顺序被形成，其中所述蚀刻第二氧化物膜，湿法蚀刻氮化物膜，并且离子注入离子到形成有第一氧化物膜的半导体衬底中，以在栅电极的两侧上形成源区和漏区。实施例，可以防止等离子体损伤和漏电流通过在半导体器件中形成栅极间隔体可以提高CMOS图像传感器的器件特性在形成硅化物层上的残留氧化物层。

45. 发明公开

KR1020100070558A 반도체 소자의 제조 방법 无效
标题翻译：制造半导体器件的方法
公开(公告)号：KR1020100070558A
公开(公告)日：2010-06-28
申请号：KR1020080129148
申请日：2008-12-18
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H01L21/02068 , H01L21/32136 , H01L21/32139
摘要： PURPOSE: A metal for manufacturing a semiconductor device is provided to effectively remove a polymer which is formed on the sidewall of the metal line by additionally performing a cleaning process with a fluoric acid after a solvent treatment is performed. CONSTITUTION: A metal material(210) is formed on a semiconductor substrate(200). A photo resist pattern is formed on the metal material. A metal line is formed by isotropically etching the metal material using the photo resist pattern as a mask. A first solvent treatment is performed with respect to a polymer on the sidewall of the metal line. A fluoric acid treatment is performed with respect to the polymer. The semiconductor substrate is cleaned with de-ionized water.
摘要翻译：目的：提供一种用于制造半导体器件的金属，用于通过在执行溶剂处理之后另外执行用氟酸进行清洁处理来有效地除去形成在金属线的侧壁上的聚合物。构成：在半导体衬底（200）上形成金属材料（210）。在金属材料上形成光刻胶图形。金属线通过使用光致抗蚀剂图案作为掩模进行各向同性蚀刻金属材料而形成。相对于金属线的侧壁上的聚合物进行第一溶剂处理。对聚合物进行氟酸处理。用去离子水清洗半导体衬底。

46. 发明公开

KR1020100053061A 이미지센서의 제조방법 无效
标题翻译：图像传感器制造方法
公开(公告)号：KR1020100053061A
公开(公告)日：2010-05-20
申请号：KR1020080112025
申请日：2008-11-12
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/1464
摘要： PURPOSE: A method for manufacturing an image sensor is provided to secure light receiving region in an identical pixel by reducing the size of via-hole. CONSTITUTION: An interlayer insulation layer(160) with a wiring is formed on a semiconductor substrate. A first doping layer(210) and an image sensing part on which a second doping layer is stacked are formed on the interlayer insulation layer. A hard mask(240) including an opening is formed on the image sensing part. A pre-via-hole is formed to expose the inside of the image sensing part. A spacer is formed in the pre-via-hole. The spacer is removed by an etching process with a chemical. The image sensing part and the interlayer insulation layer are etched to form a deep via-hole for exposing the wiring.
摘要翻译：目的：提供一种用于制造图像传感器的方法，通过减小通孔的尺寸来确保相同像素中的光接收区域。构成：在半导体衬底上形成具有布线的层间绝缘层（160）。在层间绝缘层上形成第一掺杂层（210）和其上层叠有第二掺杂层的图像感测部分。包括开口的硬掩模（240）形成在图像感测部分上。形成预通孔以暴露图像感测部分的内部。在预通孔中形成间隔物。通过用化学品的蚀刻工艺除去间隔物。蚀刻图像感测部分和层间绝缘层以形成用于暴露布线的深通孔。

47. 发明公开

KR1020100052638A 이미지 센서의 제조 방법 无效
标题翻译：图像传感器制造方法
公开(公告)号：KR1020100052638A
公开(公告)日：2010-05-20
申请号：KR1020080111442
申请日：2008-11-11
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146 , H01L21/28 , H01L27/14
CPC分类号： H01L21/02063 , H01L27/14634
摘要： PURPOSE: A method for manufacturing an image sensor is provided to fully dump photo charges by designing a device in order to generate potential difference between the source/drain of both end of a transfer transistor. CONSTITUTION: An interlayer insulation layer(160) including a wiring is formed on a semiconductor substrate(100). The interlayer insulation layer is penetrated in order to form a via-hole which exposes the wiring. A metal material fills the inside of the via-hole in order to forma contact plug. A first doping layer(210) and a second doping layer(220) is stacked to form an image sensor(200). The image sensor is arranged on the interlayer insulation layer. The residue which is generated by a via-hole formation process is removed by cleaning processes.
摘要翻译：目的：提供一种用于制造图像传感器的方法，通过设计一种器件来完全转储光电荷，以产生传输晶体管两端的源/漏之间的电位差。构成：在半导体衬底（100）上形成包括布线的层间绝缘层（160）。穿透层间绝缘层以形成露出布线的通孔。金属材料填充通孔的内部以形成接触塞。堆叠第一掺杂层（210）和第二掺杂层（220）以形成图像传感器（200）。图像传感器布置在层间绝缘层上。由通孔形成工艺产生的残留物通过清洗方法除去。

48. 发明公开

KR1020100045099A 이미지 센서의 제조 방법 失效
标题翻译：图像传感器制造方法
公开(公告)号：KR1020100045099A
公开(公告)日：2010-05-03
申请号：KR1020080104146
申请日：2008-10-23
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14607 , H01L27/14634 , H01L27/1469 , H01L27/14698
摘要： PURPOSE: A manufacturing method of an image sensor is provided to improve the coherence between substrates by removing the organic layer after bonding by arranging the organic layer between substrates. CONSTITUTION: A readout circuit is formed in a first substrate(100). A wiring(150) is formed on the readout circuit. A first organic layer(220) is formed on the wiring. A second organic layer(230) is formed on a second substrate(200). An organic layer and an image sensing device are formed by bonding the first organic layer and the second organic layer. The organic layer is removed by executing a thermal process for the first substrate and the second substrate.
摘要翻译：目的：提供图像传感器的制造方法，以通过在基板之间布置有机层来在接合之后去除有机层来改善基板之间的相干性。构成：在第一基板（100）中形成读出电路。在读出电路上形成布线（150）。在布线上形成第一有机层（220）。第二有机层（230）形成在第二基板（200）上。通过结合第一有机层和第二有机层来形成有机层和图像感测装置。通过对第一基板和第二基板执行热处理来去除有机层。

49. 发明公开

KR1020100041416A 이미지센서의 제조방법 失效
标题翻译：制造图像传感器的方法
公开(公告)号：KR1020100041416A
公开(公告)日：2010-04-22
申请号：KR1020080100584
申请日：2008-10-14
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L27/146
CPC分类号： G03F7/423 , C11D3/3947 , C11D7/3209 , C11D11/0047 , G03F7/425 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： PURPOSE: An image sensor and a method for manufacturing the same are provided to perform a fine patterning process by forming a metal for a contact plug in a via-hole. CONSTITUTION: A readout circuit is formed on a first substrate. A first interlayer insulation layer(160) is formed on the first substrate. A wiring(150) is formed on the first interlayer insulation layer to be electrically connected to the readout circuit. A second interlayer insulation layer(162) is formed on the wiring. The second interlayer insulation layer is partially etched using a photo resist pattern as an etching mask in order to form a via-hole which exposes the upper side of the wiring. A contact plug is formed in the via-hole.
摘要翻译：目的：提供一种图像传感器及其制造方法，通过在通孔中形成用于接触插塞的金属来进行精细图案化处理。构成：在第一基板上形成读出电路。在第一基板上形成第一层间绝缘层（160）。在第一层间绝缘层上形成电连接到读出电路的布线（150）。在布线上形成第二层间绝缘层（162）。使用光致抗蚀剂图案作为蚀刻掩模来部分地蚀刻第二层间绝缘层，以便形成暴露布线的上侧的通孔。在通孔中形成接触塞。

50. 发明公开

KR1020100019098A 반도체 소자 및 그의 제조 방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020100019098A
公开(公告)日：2010-02-18
申请号：KR1020080077958
申请日：2008-08-08
申请人： 주식회사 디비하이텍
发明人： 정충경
IPC分类号： H01L21/20 , H01L27/12 , H01L21/027
CPC分类号： H01L27/14636 , H01L27/14634 , H01L27/1469
摘要： PURPOSE: A semiconductor device and a method for manufacturing the same are provided to remove residues in a via-hole by forming the via-hole with a hard mask pattern after combining wafers. CONSTITUTION: A second wafer(92) is combined on the upper side of a first wafer(90). A hard mask layer(140A) is formed on the back side of the second wafer. A photosensitive pattern exposing a via-hole region is formed on the upper side of the hard mask layer. A hard mask pattern(120A) is formed by etching the hard mask layer with the photosensitive pattern as an etching mask. The via-hole is formed by etching the first water and the second wafer to a constant depth with the hard mask pattern as an etching mask. The first wafer and the second wafer are combined by a heat treatment.
摘要翻译：目的：提供一种半导体器件及其制造方法，用于通过在组合晶片之后通过形成具有硬掩模图案的通孔来去除通孔中的残留物。构成：第二晶片（92）组合在第一晶片（90）的上侧。硬掩模层（140A）形成在第二晶片的背面上。在硬掩模层的上侧形成露出通孔区域的感光图案。通过用感光图案作为蚀刻掩模蚀刻硬掩模层来形成硬掩模图案（120A）。通过使用硬掩模图案作为蚀刻掩模，将第一水和第二晶片蚀刻到恒定深度来形成通孔。通过热处理将第一晶片和第二晶片组合。

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