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    • 23. 发明公开
    • 세정액 조성물
    • 洗涤剂组合物
    • KR1020150117834A
    • 2015-10-21
    • KR1020140043449
    • 2014-04-11
    • 석만걸이철환
    • 석만걸이철환
    • C11D7/00C11D17/00C11D7/44
    • C11D7/00C11D7/44C11D17/00
    • 본발명은세정액조성물에관한것이다. 본발명의세정액조성물은통상의상수를증류하거나이온교환수지를통하여정제한정제수 75 ~ 80 중량%에대하여이산화탄소를 20 ~ 25 중량%를압축혼합한것을특징으로한다. 본발명에의해, 압축분무기형태의용기에밀봉하여항시휴대가간편함과아울러, 압축분무기를통해손쉽게분사하여오염물의세정이가능하고, 인체에해가없으면서도방충, 탈취가가능한세정액조성물을제공한다.
    • 本发明涉及清洗液组合物。 本发明的清洁溶液组合物相对于通过蒸馏一般顶部水或通过离子交换树脂精制的75-80重量%的精制水压缩并混合20-25重量%的二氧化碳。 根据本发明,提供了一种清洁液组合物,其通过以压缩喷雾器形式密封在容器中并且对人体无害地携带便于携带,并且能够通过容易地通过压缩喷雾器喷雾来清洁污染物, 并排斥昆虫和除臭。
    • 25. 发明公开
    • 컬럼형 반응기 및 코일관형 숙성반응기를 사용한 과초산용액의 제조방법
    • 使用柱型反应器和线管型老化反应器的营养溶液的制造方法
    • KR1020100048261A
    • 2010-05-11
    • KR1020080107347
    • 2008-10-30
    • 이진식
    • 이진식김종복정찬호권민기박은주
    • C07C409/24C11D7/00
    • PURPOSE: A method for manufacturing peracetic solution is provided to continuously manufacture compositions which are proper in various uses and to prevent environmental pollution. CONSTITUTION: A method for manufacturing peracetic solution comprises: a step of passing hydrogen peroxide and acetic acid through a tube type purifier in which a first cation ion exchange resin is filled to remove metal impurities of hydrogen peroxide and acetic acid and stabilize temperature; a step of mixing hydrogen peroxide and acetic acid in a mole ratio of 1:20-20:1 to make reaction raw solution; a step of injecting the reaction raw solution to a column type reactor in which a second cation ion exchange resin is filled to generate peracetic acid; a step of passing reaction product through a first coil tube type maturation reactor to performing generation of peroxide by equilibrium state; a step of mixing purified water with peracetic acid to diluting the peracetic acid raw liquid; and a step of maturing the peracetic acid.
    • 目的:提供一种制造过乙酸溶液的方法,以连续制备适用于各种用途并防止环境污染的组合物。 构成:制造过乙酸溶液的方法包括:通过管式净化器使过氧化氢和乙酸通过其中填充第一阳离子交换树脂以除去过氧化氢和乙酸的金属杂质并稳定温度的步骤; 以1:20-20:1的摩尔比混合过氧化氢和乙酸以制备反应原液的步骤; 将反应生成液注入柱状反应器的步骤,其中填充有第二阳离子交换树脂以生成过乙酸; 使反应产物通过第一卷管式成熟反应器以通过平衡状态产生过氧化物的步骤; 将纯水与过乙酸混合稀释过乙酸原液的步骤; 以及熟化过乙酸的步骤。
    • 27. 发明公开
    • 세정액 및 그를 이용한 후세정 방법
    • 清洁解决方案和清洗方法
    • KR1020080029579A
    • 2008-04-03
    • KR1020060096363
    • 2006-09-29
    • 에스케이하이닉스 주식회사
    • 오기준
    • C11D7/34C11D7/08C11D7/00
    • C11D7/34C11D7/04C11D7/08C11D11/0047H01L21/02082
    • A cleaning solution for preparing a semiconductor, and a post-cleaning method after the etching of a metal layer by using the cleaning solution are provided to improve cleaning effect and to form a vertical profile of bit line by increasing the content of sulfuric acid and hydrogen peroxide. A cleaning solution comprises 10 wt% or more of sulfuric acid(H2SO4); 10 wt% or more of hydrogen peroxide(H2O2); and 100-300 ppm of hydrofluoric acid(HF). Preferably the cleaning solution has a temperature of 25-45 deg.C. The post-cleaning method comprises the steps of forming a layer containing at least tungsten layer; etching the layer; and post-cleaning the layer by using the cleaning solution.
    • 提供了一种用于制备半导体的清洁溶液以及通过使用清洗溶液蚀刻金属层之后的后清洗方法,以通过增加硫酸和氢的含量来改善清洗效果并形成位线的垂直剖面 过氧化物。 清洗液含有10重量%以上的硫酸(H 2 SO 4); 10重量%以上的过氧化氢(H 2 O 2); 和100-300ppm氢氟酸(HF)。 优选地,清洁溶液的温度为25-45℃。 后清洗方法包括以下步骤:形成至少包含钨层的层; 蚀刻层; 并通过使用清洁溶液对层进行后清洗。