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    • 25. 发明公开
    • 오디오 신호의 부호화, 복호화 방법 및 장치
    • 编码/解码音频信号的方法和装置
    • KR1020150069919A
    • 2015-06-24
    • KR1020130156643
    • 2013-12-16
    • 삼성전자주식회사
    • 이남숙김현욱
    • G10L19/02
    • G10L19/265G10L19/02G10L19/167
    • 오디오신호의부호화및 복호화시 발생되는에러를감소시킴으로써, 복원된오디오신호의음질을높일수 있는오디오신호의부호화방법및 장치, 및복호화방법및 장치를제공한다. 본발명의제 1 실시예에따르면, 오디오신호로부터피치를검출하는단계; 검출된피치를고려하여필터계수를결정하는단계; 결정된필터계수에기초하여오디오신호에대하여제 2 필터링을수행하는단계; 제 2 필터링된오디오신호를부호화하는단계를포함하는오디오부호화방법이제공된다.
    • 提供了一种用于对音频信号进行编码和解码的装置及其方法,其可以通过减少随着音频信号被编码和解码而发生的误差而提高重构音频信号的声音质量。 根据本发明的第一实施例,音频信号的编码和解码方法包括以下步骤:从音频信号中检测音高; 通过考虑所检测的音调来确定滤波器系数; 基于所确定的滤波器系数对音频信号执行第二滤波; 并对第二滤波音频信号进行解码。
    • 26. 发明公开
    • 3차원 오디오 신호를 부호화 및 복호화하는 방법 및 장치
    • 编码和解码三维音频信号的装置和方法
    • KR1020120137253A
    • 2012-12-20
    • KR1020120060523
    • 2012-06-05
    • 삼성전자주식회사
    • 이영우이남숙김선민심환김현욱정종훈김영태
    • G10L19/00H04R5/02
    • PURPOSE: A method and an apparatus for encoding and decoding a three-dimensional audio signal are provided to maintain three-dimensional effect of a three-dimensional audio signal by using a location parameter based on a gain value of a three-dimensional object signal. CONSTITUTION: An encoding apparatus obtains location parameters which indicates a virtual location of a three-dimensional object signal on a speaker layout of a multi channel based on a channel gain value(S710). The encoding apparatus encodes the three-dimensional audio signal and the location parameter(S720). [Reference numerals] (AA) Start; (BB) End; (S710) Obtaining a location parameter; (S720) Encoding a 3D audio signal and the location parameter
    • 目的:提供一种用于对三维音频信号进行编码和解码的方法和装置,以通过使用基于三维对象信号的增益值的位置参数来维持三维音频信号的三维效果。 构成:编码装置基于信道增益值获得指示多频道的扬声器布局上的三维对象信号的虚拟位置的位置参数(S710)。 编码装置对三维音频信号和位置参数进行编码(S720)。 (附图标记)(AA)开始; (BB)结束; (S710)获取位置参数; (S720)对3D音频信号和位置参数进行编码
    • 28. 发明公开
    • 박막트랜지스터 기판 및 그 제조방법
    • 薄膜晶体管基板及其制造方法
    • KR1020080005767A
    • 2008-01-15
    • KR1020060064528
    • 2006-07-10
    • 삼성전자주식회사
    • 계명하유재진김현욱손정호석민구조식영
    • H01L29/786
    • H01L27/1288G02F1/136227H01L27/124H01L27/3248
    • A thin film transistor substrate and a manufacturing method thereof are provided to increase an aperture ratio of the TFT substrate by preventing a semiconductor pattern from being protruded from the substrate. A TFT substrate includes a gate electrode(11), a gate insulation film(20), a semiconductor pattern(30), source and drain electrodes(51,52), a pixel electrode(40), and a coupling electrode(40'). The gate insulation film is formed on the gate electrode. The semiconductor pattern is formed to cover the gate electrode on the gate insulation film. The source and drain electrodes are formed to be apart from each other to cover the semiconductor pattern on the semiconductor pattern. The pixel electrode is formed to be electrically connected to the drain electrode. The coupling electrode is elongated from the pixel electrode and directly contacted with the drain electrode on the pixel electrode.
    • 提供薄膜晶体管基板及其制造方法,以通过防止半导体图案从基板突出来增加TFT基板的开口率。 TFT基板包括栅电极(11),栅极绝缘膜(20),半导体图案(30),源极和漏极(51,52),像素电极(40)和耦合电极(40' )。 栅极绝缘膜形成在栅电极上。 半导体图案形成为覆盖栅极绝缘膜上的栅电极。 源极和漏极形成为彼此分开以覆盖半导体图案上的半导体图案。 像素电极形成为与漏电极电连接。 耦合电极从像素电极伸长并直接与像素电极上的漏电极接触。