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1. 发明授权

KR101501894B1 마찰교반접합 온도측정 장치 및 방법 有权
标题翻译：用于摩擦焊接的温度测量装置及使用该方法的方法
公开(公告)号：KR101501894B1
公开(公告)日：2015-03-12
申请号：KR1020130155121
申请日：2013-12-13
申请人： 한국생산기술연구원
发明人： 김영곤 , 유정한 , 박현국 , 김인주 , 오익현
IPC分类号： B23K20/12 , B23K20/26
摘要： 본 발명의 마찰교반접합 온도측정 장치는 회전하면서 이동하여 용접대상물을 마찰교반접합하는 용접툴, 상기 용접툴의 하부에서 용접되는 용접대상물을 지지하는 백킹 플레이트, 상기 백킹 플레이트를 상하로 관통하며, 상기 백킹 플레이트에서 상기 용접대상물의 용접라인에 인접한 부위에 구비된 관통홀 및 상기 관통홀을 통해 상기 백킹 플레이트의 하부에서 상기 용접대상물의 하부까지 삽입되어 용접온도를 측정하는 온도센서를 포함한다.
摘要翻译：摩擦搅拌焊接温度测量装置本发明涉及一种精确测量摩擦搅拌焊接部件的最高温度的摩擦搅拌焊接温度测量装置。摩擦搅拌焊接温度测量装置包括：焊接工具，其在旋转时移动以摩擦搅拌焊接待焊接的物体; 支撑焊接在焊接工具的下侧的物体的背板; 垂直穿过背板的通孔，并安装在背板上与物体的焊接线相邻的部分中; 以及通过通孔从背板的下侧向物体的下侧插入的温度传感器，测量焊接温度。

2. 发明公开

KR1020140119859A 반도체 배선용 Al-Si(Cu) 스퍼터링 타겟의 제조방법 无效
标题翻译：制造用于半导体金属化的AL-SI（CU）溅射靶的方法
公开(公告)号：KR1020140119859A
公开(公告)日：2014-10-13
申请号：KR1020130033058
申请日：2013-03-27
申请人： 한국생산기술연구원
发明人： 오익현 , 박현국 , 장준호 , 유정한 , 손현택
IPC分类号： C23C14/34 , B22F3/12
摘要： The present invention relates to a method for manufacturing an Al-Si (Cu) sputtering target for semiconductor wiring. The method for manufacturing an Al-Si (Cu) sputtering target for semiconductor wiring includes: a step of melting base materials by heating an upper crucible of evacuated gas atomizing equipment and a lower crucible which receives molten base materials from the upper crucible and discharges the molten base materials through an orifice hole connected with a lower chamber using high frequency, wherein the upper crucible installed in the upper chamber of the gas atomizing equipment is filled with base materials of aluminum, copper, and silicon; a step of manufacturing powders by spraying argon gas into the lower chamber while the molten base materials flow from the upper crucible to the lower crucible through the orifice hole; a step of filling a mold made of graphite after cooling and extracting the manufacturing powders and mounting the mold filled with the powders in a chamber of a spark plasma sintering device; a step of increasing a temperature up to the predetermined final target temperature according to a predetermined pattern of increasing temperature while uniformly maintaining a pressure of the powders in the mold of the chamber of the evacuated spark plasma sintering device; and a step of cooling the chamber after maintaining the final target temperature for a predetermined time period when the temperature of the mold approaches the final target temperature. The method for manufacturing an Al-Si (Cu) sputtering target for semiconductor wiring can manufacture a pellet for an Al-Si (Cu) sputtering target with uniform high purity composition and property and little temperature deviation between internal and external parts through the spark plasma sintering process from ball-shaped high purity powders with uniform composition manufactured through a gas atomizing process.
摘要翻译：本发明涉及半导体布线的Al-Si（Cu）溅射靶的制造方法。制造半导体布线的Al-Si（Cu）溅射靶的方法包括：通过加热真空气体雾化设备的上坩埚和从上坩埚接收熔融基材的下坩埚来熔化基材的步骤，熔融基材通过与低室连接的孔口使用高频，其中安装在气体雾化设备的上腔室中的上坩埚填充有铝，铜和硅的基材; 通过将熔融基材从上坩埚通过孔口从上坩埚流到下坩埚，将氩气喷射到下腔体中来制造粉末的步骤; 冷却并提取制造粉末之后填充由石墨制成的模具并将填充有粉末的模具安装在放电等离子体烧结装置的腔室中的步骤; 根据预定的温度升高模式将温度升高到预定最终目标温度的步骤，同时均匀地保持粉末在真空火花等离子体烧结装置的腔室的模具中的压力; 以及当模具的温度接近最终目标温度时，在保持最终目标温度达预定时间段之后冷却腔室的步骤。制造用于半导体布线的Al-Si（Cu）溅射靶的方法可以制造具有均匀的高纯度组成的Al-Si（Cu）溅射靶的颗粒，并且通过放电等离子体制造内部和外部部件之间的温度偏差小通过气体雾化工艺制造的具有均匀组成的球形高纯度粉末的烧结过程。

3. 发明授权

KR101345359B1 마찰교반 융접툴용 텅스텐 카바이드-몰리브덴 카바이드-코발트 소결체 제조 방법 有权
标题翻译： WC-MO2C-CO硬质材料用于摩擦焊接工具应用的制造方法
公开(公告)号：KR101345359B1
公开(公告)日：2014-01-27
申请号：KR1020120075190
申请日：2012-07-10
申请人： 한국생산기술연구원
发明人： 오익현 , 박현국 , 윤희준 , 유정한
IPC分类号： B22F3/105 , C04B35/56 , C04B35/64
摘要： The present invention relates to a method for manufacturing a pellet for a friction stir welding tool used in a friction stir welding tool of high melting point material, such as steel, titanium, or different materials, such as aluminum-steel, titanium. The method for manufacturing pellet for a friction stir welding tool includes: a filling step for inserting and mixing a sealed milling container into a ball milling device by mixing a carbide ball and alcohol in mixed powers of tungsten carbide powder, molybdenum carbide, and cobalt power and filling a mold of graphite with the mixed powders through a dry process in order to remove alcohol included in the mixed powders; a mounting step for mounting a mold filled with the mixed powders in a chamber of a spark plasma sintering device; an evacuating step for evacuating the inside of the chamber; a forming step for forming pellet until the temperature approaches the final objective temperature while increasing temperature according to the set temperature increasing pattern and maintaining constant pressure on the mixed powders in the mold; and a cooling step for cooling the inside of the chamber while maintaining the pressed pressure in the mold after the forming step. According to the manufacturing method, the method for manufacturing a pellet can manufacture a tungsten carbide-molybdenum carbide-cobalt pellet to have high density and to be suitable for a friction stir welding tool using a spark plasma sintering process and can manufacture uniform pellet of which particles are not grew in a short time in a single process and which has the uniform tissue, high toughness, high wear resistance, and high strength and without internal and external properties of matter. [Reference numerals] (120) Cooling unit; (130) Electric current supplying unit; (140) Temperature detecting unit; (150) Pump; (170) Main controller; (180) Operation unit
摘要翻译：本发明涉及一种用于摩擦搅拌焊接工具的颗粒的制造方法，该工具用于诸如钢，钛或不同材料如铝钢，钛的高熔点材料的摩擦搅拌焊接工具中。用于摩擦搅拌焊接工具的颗粒的制造方法包括：填充步骤，用于通过将碳化钨粉末，碳化钼和钴电力的混合动力混合碳化物球和醇来将密封的研磨容器插入和混合到球磨装置中并通过干法通过混合粉末填充石墨模具以除去混合粉末中所含的醇; 用于将填充有混合粉末的模具安装在放电等离子体烧结装置的腔室中的安装步骤; 用于抽空室内部的排气步骤; 形成步骤，用于在温度接近最终目标温度的同时根据设定的温度升高模式增加温度并保持模具中的混合粉末的恒定压力，形成沉淀物; 以及冷却步骤，用于在形成步骤之后保持模具中的按压压力同时冷却腔室的内部。根据制造方法，制造颗粒的方法可以制造具有高密度的碳化钨 - 碳化钼 - 钴颗粒，并且适用于使用放电等离子体烧结工艺的摩擦搅拌焊接工具，并且可以制造均匀的颗粒，其中颗粒在单一工艺中在短时间内不生长，并且具有均匀的组织，高韧性，高耐磨性和高强度，并且没有物质的内部和外部特性。（附图标记）（120）冷却单元; （130）电流供应单元; （140）温度检测单元; （150）泵; （170）主控制器（180）操作单元

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