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1. 发明授权

KR100370331B1 반도체 장치 및 그 제조 방법 失效
标题翻译： 반도체장치및그제조방법
公开(公告)号：KR100370331B1
公开(公告)日：2003-01-29
申请号：KR1019990042744
申请日：1999-10-05
申请人： 가부시끼가이샤 도시바
发明人： 에기유이찌로
IPC分类号： H01L27/08
CPC分类号： H01L29/66628 , H01L21/76895 , H01L21/823418 , H01L21/823475
摘要： In a method of manufacturing a semiconductor device, gate electrodes are formed on a surface of a silicon substrate, and, over the surface of the silicon substrate thus formed, an amorphous silicon film is formed by deposition. Next, the amorphous silicon film is selectively grown to form single-crystalline film portions. Then, a resist is formed only on an interconnection formation portion. Thereafter, the amorphous silicon film portions and other than the amorphous silicon film portion which lies in the interconnection formation portion are removed. Then, a local interconnection layer comprised of a silicide film is formed the region of the amorphous silicon film portion lying in the interconnection formation portion and the regions of the single-crystalline silicon film portions. According to the above-mentioned manufacturing method, the step of forming the local interconnection layer is simplified which step was complicated in case of the conventional technique.
摘要翻译：在制造半导体器件的方法中，在硅衬底的表面上形成栅电极，并且在如此形成的硅衬底的表面上通过沉积形成非晶硅膜。接着，选择性生长非晶硅膜以形成单晶膜部分。然后，仅在互连形成部分上形成抗蚀剂。之后，去除位于互连形成部分中的非晶硅膜部分和除非晶硅膜部分之外的非晶硅膜部分。然后，在位于互连形成部分中的非晶硅膜部分的区域和单晶硅膜部分的区域中形成由硅化物膜构成的局部互连层。根据上述制造方法，形成局部互连层的步骤被简化，在常规技术的情况下该步骤变得复杂。

2. 发明公开

KR1020000028830A 반도체 장치 및 그 제조 방법 失效
标题翻译：半导体器件的器件和制造方法
公开(公告)号：KR1020000028830A
公开(公告)日：2000-05-25
申请号：KR1019990042744
申请日：1999-10-05
申请人： 가부시끼가이샤 도시바
发明人： 에기유이찌로
IPC分类号： H01L27/08
CPC分类号： H01L29/66628 , H01L21/76895 , H01L21/823418 , H01L21/823475
摘要： PURPOSE: A device and a fabricating method of a semiconductor device are provided to easily form a local interconnection and to prevent the leakage of current. CONSTITUTION: To fabricate a semiconductor device, a gate insulating film(13) of a transistor is formed on the surface of a substrate(11). And, a gate electrode(15) is formed on the gate insulating film to form an insulating film(16) covering the gate insulating film and the gate electrode. Amorphous semiconductor layers are deposited onto the surface of the substrate. Then, the amorphous semiconductor layers are selectively grown to form a monocrystalline semiconductor layer in the selected part of the amorphous semiconductor layers. A resist layer is formed at the interconnection part of the amorphous semiconductor layers for removing the portion of the amorphous semiconductor layers excepting the portion placed in the interconnection part. And, the resist layer is removed for depositing a metal layer onto the monocrystalline semiconductor layer and onto the portion of the amorphous semiconductor layer. Then, a selicide layer(20) is formed by selecting the metal layer.
摘要翻译：目的：提供半导体器件的器件和制造方法，以容易地形成局部互连并防止电流泄漏。构成：为了制造半导体器件，在衬底（11）的表面上形成晶体管的栅极绝缘膜（13）。并且，在栅极绝缘膜上形成栅电极（15），形成覆盖栅极绝缘膜和栅电极的绝缘膜（16）。非晶半导体层沉积在衬底的表面上。然后，选择性地生长非晶半导体层，以在非晶半导体层的选定部分中形成单晶半导体层。在非晶半导体层的互连部分处形成抗蚀剂层，用于除去布置在互连部分中的部分之外的部分非晶半导体层。并且，去除抗蚀剂层以将金属层沉积到单晶半导体层上并且到非晶半导体层的部分上。然后，通过选择金属层形成硅化物层（20）。

3. 发明公开

KR1020040022169A 고체 촬상 장치 无效
标题翻译：固态成像装置
公开(公告)号：KR1020040022169A
公开(公告)日：2004-03-11
申请号：KR1020030061666
申请日：2003-09-04
申请人： 가부시끼가이샤 도시바
发明人： 아야베마사유끼 , 야마시따히로후미 , 이노우에이꾸꼬 , 에기유이찌로
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14623
摘要： PURPOSE: To reduce an incident light intruding into adjacent photo diodes to realize the reduction of the crosstalk phenomenon. CONSTITUTION: The solid state imaging apparatus has: unit cells C arranged in rows and columns on a semiconductor substrate 1, each having a photo diode D for storing a signal charge and a reading circuit 19 for reading the signal charge of the diode D; a wiring layer-containing interlayer film formed on the substrate 1; and a horizontal screen film having openings 13 above the photo diodes D in the unit cells on the interlayer film. The apparatus comprises first vertical screen barriers 15 disposed among the unit cells 2 adjacent along the rows, and second vertical screen barriers 16 disposed among the unit cells C adjacent along the columns. The first and the second vertical screen barriers 15, 16 are buried between the semiconductor substrate 1 surface and the horizontal screen film.
摘要翻译：目的：减少入射到相邻光电二极管的入射光，实现串扰现象的减少。构成：固态成像装置具有：在半导体基板1上排列成行和列的单元电池C，每个具有用于存储信号电荷的光电二极管D和用于读取二极管D的信号电荷的读取电路19; 形成在基板1上的配线层的中间膜; 以及在中间膜上的单元电池中的光电二极管D上方具有开口13的水平屏幕膜。该装置包括布置在沿着行相邻的单元电池2之间的第一垂直屏障15和布置在沿列相邻的单元电池C之间的第二垂直屏障16。第一和第二垂直屏障15,16被埋在半导体衬底1表面和水平屏幕膜之间。

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