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    • 2. 发明专利
    • Control unit of duty cycle in half-bridge type dc-dc converter using current mode control
    • 使用电流模式控制的半桥型DC-DC转换器中的占空比控制单元
    • JP2005051991A
    • 2005-02-24
    • JP2004197731
    • 2004-07-05
    • Renesas Technology Corp株式会社ルネサステクノロジ
    • RAI ENSEIJO FUKUSANLIN SHIRONKO YUIKETSU
    • H02M3/28H02M1/02H02M3/10
    • PROBLEM TO BE SOLVED: To provide a control unit of duty cycle in a half-bridge type DC-DC converter using current mode control for making the duty cycle of a pulse width modulation signal symmetric by latching the voltage of a voltage-divider capacitor on input side to a predetermined value.
      SOLUTION: The half-bridge type DC-DC converter 4 using the current mode control is provided with an auxiliary transformer 31 to be connected in parallel to the primary side 421 of the main transformer 42 and a first diode SD1 and a second diode SD2 to be connected in parallel relative to the voltage-divider capacitors C1, C2 connected in series and connected in series in forward direction. At this time, the primary side 311 no-point end of the auxiliary transformer 31 is connected to one end of the voltage-divider capacitor C1, C2 side in the transformer 44, while one end of the secondary side 312 of the auxiliary transformer 31 is connected between the voltage-divider capacitors C1, C2, connecting the other end between the first diode and the second diode.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了通过使用电流模式控制来提供半桥式DC-DC转换器中的占空比的控制单元,以使脉冲宽度调制信号的占空比通过锁存电压 - 输入侧的分压电容器达到预定值。 解决方案:使用电流模式控制的半桥式DC-DC转换器4设置有与主变压器42的初级侧421并联连接的辅助变压器31,第一二极管SD1和第二二极管SD1 二极管SD2相对于串联连接的分压电容器C1,C2并联连接并且在正向连接。 此时,辅助变压器31的初级侧311无点端与变压器44的分压电容器C1,C2侧的一端连接,辅助变压器31的次级侧312的一端 连接在连接第一二极管和第二二极管之间的另一端的分压电容器C1,C2之间。 版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • OVERHEAT PROTECTIVE DEVICE FOR SEMICONDUCTOR ELEMENT
    • JPH07135731A
    • 1995-05-23
    • JP27873793
    • 1993-11-09
    • FUJI ELECTRIC CO LTD
    • KATO MASASHI
    • H01L27/04H01L21/822H02H7/12H02H7/122H02M1/00H02M3/10H02M7/48
    • PURPOSE:To prevent the scaling-up and the increase of cost of a semiconductor power converter due to an excess safety design for protecting a semiconductor element from thermal breakdown in the semiconductor power converter difficult to specifying service conditions. CONSTITUTION:Currents flowing through a semiconductor element are measured by a current measuring means 101, voltage by a voltage measuring means 102 and a case temperature by a case-temperature measuring means 103. A junction temperature Tj can be obtained accurately by composing an arithmetic means 1 of a loss arithmetic means 11 computing the loss of the semiconductor element from a current value and a voltage value measured, a temperature-difference saturated-value arithmetic means 12 computing the temperature-difference saturated value between the junction temperature and the case temperature on the basis of the loss, a transient temperature difference arithmetic means 13 computing transient temperature difference from the temperature-difference saturated value, and an adder 14 adding the case temperature and the transient temperature difference and acquiring the junction temperature, thus allowing positive overheat protection by a protective means 2. Accordingly, an excess safety design need not be conducted.