会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明专利
    • MANUFACTURE OF PTC ELEMENT
    • JPH04124801A
    • 1992-04-24
    • JP24530590
    • 1990-09-14
    • BROTHER IND LTD
    • KINOSHITA MASAHIKODEGUCHI MASAAKI
    • H01C17/10H01C7/02H01C17/12
    • PURPOSE:To obtain a method of manufacturing PTC elements of a thin-walled type, large area and shapes at a low cost and easily by forming a film through spraying a matrix with a composite powder obtained by addition of elements such as Ce, La, Nb and Ta to BaTiO3 powder and by heat-treating the sprayed film separated from the matrix. CONSTITUTION:The title method is provided with a process for spraying a matrix 2 with a composite powder obtained by addition of elements such as Ce, La, Nb and Ta to BaTiO3 powder to form a film 3 on the matrix 2, that for separating the sprayed film 3 from the matrix 2 and that for heat-treating the separated sprayed film 3. As a semiconductor-making agent, e.g. BaTiO3 powder, to which 0.2at.% La is added, is calcined at 1100 deg.C and thereafter pulverized and the powder is sprayed to the film thickness of 0.1-1mum on a Zn alloy matrix 2 by a plasma spraying gun 1. Then, the matrix 2 is melted so that a BaTiO3 film 3 is separated, and the separated Basic, film 3 is heat- treated at 1340 deg.C in air to be made into a semiconductor as PTC element 4. Subsequently, A1 electrode 5 is formed in the PTC element 4 by sputtering.
    • 4. 发明专利
    • MANUFACTURE OF RESISTOR BY FLAME-SPRAY COATING
    • JPH0260103A
    • 1990-02-28
    • JP21162688
    • 1988-08-26
    • UCHIYA THERMOSTAT
    • TAKEDA HIDEAKI
    • H05B3/12H01C17/10H05B3/20
    • PURPOSE:To make it possible to easily manufacture a resistor having the desired resistance value and power value by a method wherein the resistance value of the title resistor is adjusted by changing the compositional ratio of the material consisting of metal powder and another powder such as semiconductor and the like having the conductivity different from that of the metal powder. CONSTITUTION:High voltage is applied between an anode A and a cathode K in a plasma torch 1, arc gas is ionized, and a plasma jet P is generated. The powder C such as metal powder M, and the powder of semiconductor and the like are fed from material powder feeding devices FD 1 and 2 respectively. The ratio and the feeding quantity of said two kinds of powders are controlled by adjusting the opening of the nozzle of the feeding device using a powder feed controller FCON and also by the adjust and the like of the flow rate of carrier gas. As a result, the powder C and M are fed into the jet P at the prescribed ratio, and the powder M and C are supplied into the jet P at the prescribed ratio and the speed of flow rate. The powder melted by the jet P is flame-sprayed on the substrate 3 covered by a mask 2. The substrate 3 moves in front and rear and left and right directions by a driving part D, and this movement is controlled by a driving control section DCON. As a result, a resistor 4 having the circuit pattern shown in the diagram, for example, can be formed on the substrate 3.
    • 9. 发明专利
    • MANUFACTURE OF NONLINEAR RESISTOR ELEMENT
    • JPH04130704A
    • 1992-05-01
    • JP25270590
    • 1990-09-21
    • MEIDENSHA ELECTRIC MFG CO LTD
    • YOSHIOKA NOBUYUKIKASHIWAGI YOSHIYUKI
    • H01C17/06H01C7/10H01C17/10
    • PURPOSE:To stabilize a characteristic of an element and improve its quality, by keeping the body of the element, which includes zinc oxide as its principal component, in a heating state, and by plasma fusion-injecting the powder of antimony oxide on the body of the element in a non-oxidation atmosphere, and further, by forming a reactive insulation layer on the side face of the body of the element. CONSTITUTION:An Sb2O3 powder of 325 mesh or less in particle diameter is provided. Using a well-known plasma spray device, this powder is applied, in the atmosphere of nitrogen, on a target (the circumferential side face of the cylindrical elemental body of a nonlinear resistor which includes zinc oxide as its principal component), which is heated and kept at 950 deg.C. Thereby, an insulation layer 2 made of Zn0.67Sb2.33O4 (spinel layer) is formed on the side face part of an elemental body 1. The formation of a uniform reactive insulation layer has been comfirmed, observing the obtained insulation layer by an X-ray microanalyser. In this manner, since the reactive insulation layer is formed by depositing antimony oxide using plasma spray, there is no void, and the fine and uniform reactive insulation layer can be obtained. Therefore, the characteristic of the element is further stabilized and its quality is more improved.