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1. 发明专利

JP2013220951A Polycrystalline silicon ingot, and method of manufacturing the same, and use thereof 审中-公开
标题翻译：多晶硅，其制造方法及其使用方法
公开(公告)号：JP2013220951A
公开(公告)日：2013-10-28
申请号：JP2012091269
申请日：2012-04-12
申请人： Sharp Corp , シャープ株式会社
发明人： OISHI RYUICHI
IPC分类号： C30B29/06 , C30B28/08
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing polycrystalline silicon ingot that is easy and inexpensive, and can reduce the impurity density of an ingot upper portion with good controllability, a polycrystalline silicon ingot obtained by using the method, and uses thereof.SOLUTION: When a polycrystalline silicon ingot is manufactured by solidifying molten silicon in a crucible upward in one direction from the bottom portion of the crucible, the molten silicon is solidified in the one direction while being discharged from the crucible by a rise in the liquid level of the molten silicon due to solidification expansion of the silicon.
摘要翻译：要解决的问题：提供一种容易且便宜的多晶硅锭的制造方法，能够以良好的可控性降低铸块上部的杂质密度，使用该方法得到的多晶硅锭及其用途。：通过将坩埚中的熔融硅从坩埚的底部向上方一个方向固化而制造多晶硅锭时，熔融硅通过使坩埚的液面上升，沿着一个方向固化，同时从坩埚中排出熔融硅由于硅的固化膨胀。

2. 发明专利

JPH0930894A PRODUCTION OF CRYSTALLIZED PRODUCT 失效
公开(公告)号：JPH0930894A
公开(公告)日：1997-02-04
申请号：JP18606895
申请日：1995-07-21
申请人： TSUKISHIMA KIKAI CO
发明人： NAGAYOSHI GIICHI , MIYANO KEIICHIRO , SUZUKI KENJI
IPC分类号： F23J1/00 , B09B3/00 , C30B28/08
摘要： PROBLEM TO BE SOLVED: To provide a production method of a crystallized product, designed to crystallize a melt made by melting a material to be treated and held in a vessel, having no such problems that the melt erodes the vessel, etc., and the product gets hard to extract from the vessel, and capable of prompting the melt to crystallize by maintaining it at high temperatures even without e.g. a crystallization oven. SOLUTION: Preferably, a vessel 7 is packed with a material C to be treated in unmelted state followed by heating the central part of the material C to effect melting it; in this case, a layer F consisting of the unmelted material C or a crystallized product G is put in between a melted product E made by melting the material C and the inner wall of the vessel 7 by such means that the unmelted material C is left there, or the inner wall of the vessel 7 is covered with the material C or the crystallized product G to create a space H holding the melted product E.

3. 发明专利

JP2002134410A SEMICONDUCTOR SUBSTRATE AND SOLAR CELL UTILIZING THE SAME THEIR PRODUCING METHOD 失效
公开(公告)号：JP2002134410A
公开(公告)日：2002-05-10
申请号：JP2000328943
申请日：2000-10-27
申请人： SHINETSU HANDOTAI KK , SHINETSU CHEMICAL CO
发明人： KIMURA MASAKI
IPC分类号： C30B13/06 , C30B28/08 , H01L21/20 , H01L21/208 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a solar cell, in which the production cost of semiconductor substrates can be reduced significantly, while eliminating aging effect of photoelectric conversion efficiency. SOLUTION: The method for producing a semiconductor substrate comprises a step of producing a polycrystalline wafer by slicing a polycrystalline rod, grown by doping a semiconductor material with a desired impurity dopant; and a step for increasing the grain size of the polycrystalline wafer or single crystallization of it from the surface on one side down to a desired depth by zone melt re-crystallization. The method for producing a solar cell comprises a step for forming a solar cell, such that solar light is received from the side subjected to zone melt re-crystallization using a semiconductor substrate thus produced as a starting material, and a step of removing at least a layer on the rear surface, subjected to gettering with impurities prior to forming an electrode on the rear surface in the solar cell forming process.

4. 发明专利

JPH09208386A PRODUCTION OF COMPOUND POLYCRYSTAL 失效
公开(公告)号：JPH09208386A
公开(公告)日：1997-08-12
申请号：JP2120096
申请日：1996-02-07
申请人： NIKON CORP
发明人： HAMAMURA HIROSHI
IPC分类号： C01B17/20 , C30B28/08
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a compound polycrystal of more than two components containing S, enabling the large amount synthesis without having an explosion of an ampule caused by an elevation of the inside pressure and the damage of an electric oven by setting specific three processes. SOLUTION: This method for producing a compound polycrystal includes a process of vacuum sealing a raw material into an ampule arranging a high temperature part for a synthetic reaction and a low temperature part for trapping S in a liquid state before the reaction, a process of conducting the synthetic reaction by heating the high temperature part and a process of vaporizing the liquid state S in the low temperature part by heating and performing the synthetic reaction in the high temperature part. For example, the middle part of a quartz tube of which one end is closed and inside is evacuated, is heated with a burner from outside to form a projected part in inside thereof, and the ampule shown in the figure is obtained by vacuum sealing raw materials of 0.045mol Cu, 0.045mol Ga and 0.09mol S after cooling. A CuGaS2 polycrystal is obtained by placing the ampule in a core tube of a horizontal type electric oven by putting the projected part at under side thereof, keeping the high temperature side at 800 deg.C for 14hr, then heating up to 1,250 deg.C to consume all of the trapped S, keeping for 24hr and then rapidly cooling outside the oven.

5. 发明专利

JPH02257529A MANUFACTURE OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH02257529A
公开(公告)日：1990-10-18
申请号：JP8005489
申请日：1989-03-30
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHOWA ELECTRIC WIRE & CABLE CO , KANSAI ELECTRIC POWER CO
发明人： HIRABAYASHI IZUMI , NAGAYA SHIGEO , SUGA TOSHIAKI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： B23K26/00 , C30B28/08 , C30B29/22 , H01B12/04 , H01B13/00
摘要： PURPOSE:To enhance the orientation and critical current density of an oxide superconductor by covering a superconducting oxide with a material which exhibits transparency at a melting point higher than that of the oxide, and spinning and crystallizing it with irradiation of laser beam. CONSTITUTION:A rod 1 of Y-Ba-Cu type superconducting oxide is put in a cylindrical body 2 formed of SrTiO3 so that a complex body 3 is formed. The lower portion of the complex body 3 is heated by a heater 4 and is spined to draw out a linear body 5. It is immediately cooled by gas in a cooler 6 and then irradiated with laser beam 7. Since the superconductor is thus covered with a material which exhibits transparency at a fusion point higher than that of the superconducting oxide, only the oxide in a narrow band is immediately melted and solidified by irradiation of laser beam, and a large temperature gradient is achieved. Thus a crystal of high orientation is obtained and a linear body with excellent superconducting properties is obtained.

7. 发明专利

JP2007524812A Analysis furnace equipped with a predictive temperature control function 有权
公开(公告)号：JP2007524812A
公开(公告)日：2007-08-30
申请号：JP2006508994
申请日：2004-03-02
申请人：レココーポレイションLeco Corporation
发明人：ウイリス，ピーター，エム．
IPC分类号： G01N5/04 , C30B1/00 , C30B13/00 , C30B21/04 , C30B28/08 , F27B20060101 , F27B14/00 , F27B14/20 , F27B17/02 , F27D19/00 , F27D21/00 , G01G19/00 , G01N25/00 , G01N25/18 , G01N33/22 , H05B1/02 , H05B6/28
CPC分类号： F27D21/0014 , F27B14/00 , F27B14/20 , F27B17/02 , F27D19/00 , G01G19/00 , G01N5/04 , H05B6/28 , Y10T117/10
摘要：【課題】
【解決手段】
分析炉（１２）、１対の温度センサを使用することによって分析中のるつぼ（２４）温度をモデル化するようにトレーニングされる予測的温度制御を含み、一方のセンサ（１３０）は、炉内に固定関係で取り付けられ、他方のセンサ（１４０）は、るつぼ温度プロファイルをトレーニングし調整するようにるつぼ内に位置決めされ、その結果、試料を入れるるつぼ温度をモデル化することができ、炉の動的熱特性に従った炉（１２）へのエネルギー投入への応答が分かる。るつぼ（２４）の中の温度プロファイルをモデル化することによって、より高速でより正確な分析を可能にし、所望の温度プラトーに近づいたときの温度の過剰なオーバーシュートを防ぐように炉を制御することができる。
【選択図】図4

8. 发明专利

JPH02258698A PRODUCTION OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH02258698A
公开(公告)日：1990-10-19
申请号：JP8215389
申请日：1989-03-31
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHOWA ELECTRIC WIRE & CABLE CO , KANSAI ELECTRIC POWER CO
发明人： NAGAYA SHIGEO , HIRABAYASHI IZUMI , SUGA TOSHIAKI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B28/08 , C30B29/22 , H01B13/00
摘要： PURPOSE:To obtain the title superconductor with its crystal unidirectionally solidified throughout the width direction of the film by irradiating an oxide superconducting substance with laser beams at a specified tilt angle against said width direction to effect melting said substance followed by cooling and crystallization. CONSTITUTION:A thin film 1 of an oxide superconducting substance or a substance capable of forming the same by melting and sintering is formed on a continuous base 2. The film 1 is then irradiated with laser beams 3 at a tilt angle against the scanning direction; during the process, a scanning is made in the arrow A direction to heat and melt the irradiated zone 1a. As the laser beams 3 move, the melted zone is cooled from behind to effect recrystallization. The irradiation angle theta of the laser beams is regulated so as to accomplish an optimum orientation according to laser output and film thickness. Thereby, the zone 1a begins to cool from behind successively, however, there is no temperature gradient in the width direction at a part where cooling begins and a nearly uniform temperature has been attained, thus crystal will grow parallel to the film surface in the scanning direction.

9. 发明专利

JPH02257528A MANUFACTURE OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH02257528A
公开(公告)日：1990-10-18
申请号：JP8005189
申请日：1989-03-30
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SHOWA ELECTRIC WIRE & CABLE CO , KANSAI ELECTRIC POWER CO
发明人： NAGAYA SHIGEO , HIRABAYASHI IZUMI , SUGA TOSHIAKI , TANAKA SHOJI , SHIOBARA TORU
IPC分类号： B23K26/00 , C30B28/08 , C30B29/22 , H01B12/06 , H01B13/00
摘要： PURPOSE:To enhance the critical current density of an oxide superconductor by attaching and solidifying an oxide superconducting material on the outside of a metal core wire covered with silver, and irradiating it with laser beam. CONSTITUTION:A Y-Ba-Cu-O type oxide is contained in a melting pot 2 and is melted by a heater 7. A silver-plated copper wire 1 cooled is provided which passes through the oxide from die 9, and a molten body is blown out to the outer periphery of the wire and is cooled by gas and irradiated with laser beam 6. A solidified layer is thus immediately melted and solidified by the laser beam in a narrow band. The silver plating layer reflecting the laser beam serves as a buffer layer for preventing reaction of the metal core wire with the oxide, and the metal core wire absorbs energy of the laser beam, and thereby crystal is grown in the cross direction of the wire so that orientation of the wire in axial direction is prevented from deteriorating.

10. 发明专利

JP4887504B2 A method for manufacturing a grain boundary character control polycrystalline 有权
公开(公告)号：JP4887504B2
公开(公告)日：2012-02-29
申请号：JP2007524066
申请日：2006-07-04
申请人：国立大学法人東北大学
发明人：一雄中嶋 , 徳隆宇佐美 , 航三藤原
IPC分类号： C30B28/08 , C01B33/02 , H01L31/04
CPC分类号： C01B33/02

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