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    • 6. 发明专利
    • Thin film forming method using atomic layer deposition method
    • 薄膜形成方法使用原子层沉积法
    • JP2008174842A
    • 2008-07-31
    • JP2008068427
    • 2008-03-17
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • KIN EIKANPARK YOUNG-WOOKLIM JAE-SOONCHOI SUNG-JELEE SANG-IN
    • C23C16/12C23C16/44C23C16/34C23C16/40H01L21/205H01L21/285H01L21/316
    • PROBLEM TO BE SOLVED: To provide a thin film forming method capable of producing a stoichiometrically excellent film by inhibiting formation of undesirable impurities in an atomic layer deposition method.
      SOLUTION: The thin film forming method using the atomic layer deposition method includes the steps of: injecting a first reactant containing a metallic element and a ligand in a reaction chamber and chemisorbing the first reactant on a substrate; purging the reaction chamber by an inert gas to remove the physisorbed first reactant; injecting a second reactant not containing a hydroxyl group in the reaction chamber so that oxygen of the second reactant and the metallic element are bound together by a chemical reaction of the first and second reactants, and the chemisorbed first reactant becomes a metal-oxygen atomic layer by separating the ligand from the first reactant; purging the reaction chamber by the inert gas to remove the physisorbed second reactant; and injecting a third reactant in the reaction chamber so that oxygen which is a constituting element of the third reactant and the metallic element are bound together by a chemical reaction of the remainder of the chemisorbed first reactant and the third reactant, and consequently forming a metal-oxide film in an atomic layer by making the remainder of the chemisorbed first reactant a metal-oxygen atomic layer by separating the ligand from the first reactant, with the generation of hydroxyl group held in an suppressed state.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 待解决的问题:提供能够通过在原子层沉积法中抑制不期望的杂质的形成而产生化学计量优异的薄膜的薄膜形成方法。 解决方案:使用原子层沉积方法的薄膜形成方法包括以下步骤:在反应室中注入含有金属元素和配体的第一反应物,并在基底上化学吸收第一反应物; 通过惰性气体吹扫反应室以除去物理吸附的第一反应物; 在反应室中注入不含羟基的第二反应物,使得第二反应物和金属元素的氧通过第一和第二反应物的化学反应而结合在一起,并且化学吸附的第一反应物变成金属 - 氧原子层 通过将配体与第一反应物分离; 通过惰性气体吹扫反应室以除去物理吸附的第二反应物; 以及在反应室中注入第三反应物,使得作为第三反应物的构成元素的氧和金属元素通过化学吸附的第一反应物和第三反应物的其余部分的化学反应而结合在一起,并因此形成金属 通过将配体与第一反应物分离,使化学吸附的第一反应物的其余部分成为金属 - 氧原子层,产生羟基保持在抑制状态,从而在原子层中形成氧化物膜。 版权所有(C)2008,JPO&INPIT