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    • 5. 发明专利
    • Sapphire single crystal core and manufacturing method of the same
    • SAPPHIRE单晶晶体及其制造方法
    • JP2014162673A
    • 2014-09-08
    • JP2013034581
    • 2013-02-25
    • Tokuyama Corp株式会社トクヤマ
    • MOCHIZUKI NAOTOIKEDA YUICHIOGAWA KATSUYA
    • C30B29/20C30B15/22
    • C30B15/22C30B29/20Y10T428/29
    • PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a sapphire single crystal core which has an axial direction of an r axis, a diameter of 150 mm or more, a barrel length of 200 mm or more, and contains no bubble.SOLUTION: In growing a sapphire single crystal with a growth direction of an r axis using a Czochralski method, a single crystal which contains no bubble in a barrel, has a barrel diameter of 150 mm or more, and has a barrel length of 200 or more can be stably obtained by controlling a formation rate of a shoulder part such that a growth direction length of a part which inclines 10° or more and 30° more less to the horizontal plane at the shoulder part is to be 10 mm or less. Use of a r-plane sapphire core of the shape, which is obtained by cutting this crystal eliminates a process of joining the cores in a cutting process with a multi-wire saw, and allows producing the sapphire substrate having the r-plane on a surface efficiently.
    • 要解决的问题:为了提供一种稳定地制造具有r轴的轴向,150mm以上的直径,200mm以上的筒长,并且不含气泡的蓝宝石单晶芯的方法。 :在使用切克劳斯基法生长具有r轴的生长方向的蓝宝石单晶的情况下,在筒中不含气泡的单晶体的筒直径为150mm以上,筒长为200以上 可以通过控制肩部的形成速度来稳定地获得,使得相对于肩部的水平面倾斜10°以上30°的部分的生长方向长度为10mm以下。 使用通过切割该晶体而获得的形状的r面蓝宝石芯,消除了在切割过程中与多线锯接合芯的过程,并且允许在具有r-平面的蓝宝石衬底上生成蓝宝石衬底 表面效率高。