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1. 发明专利

JP2008078625A Phase change memory cell including nanocomposite insulator 审中-公开
标题翻译：相变存储器，包括纳米复合绝缘子
公开(公告)号：JP2008078625A
公开(公告)日：2008-04-03
申请号：JP2007187966
申请日：2007-07-19
申请人： Qimonda North America Corp , キモンダノースアメリカコーポレイション
发明人： HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/144 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1246 , H01L45/1293 , H01L45/148 , H01L45/1616 , Y10S977/72 , Y10S977/723 , Y10S977/785 , Y10S977/831
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory cell including nanocomposite insulator, contacting a storage material, which makes each more minute selective device operational by reducing electric power required for changing a memory state in a memory cell. SOLUTION: The memory cell includes a first electrode 208, a second electrode 210, the storage material 212 positioned between the first electrode and the second electrode, and the nanocomposite insulator 218 contacting the storage material. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种包括纳米复合绝缘体的相变存储单元，使存储材料接触，这使得每个更多的分选选择器件通过减少改变存储器单元中的存储器状态所需的电力而工作。解决方案：存储单元包括第一电极208，第二电极210，位于第一电极和第二电极之间的存储材料212以及与存储材料接触的纳米复合绝缘体218。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007235141A Memory device having nanocrystal, and its manufacturing method 审中-公开
标题翻译：具有纳米晶体的存储器件及其制造方法
公开(公告)号：JP2007235141A
公开(公告)日：2007-09-13
申请号：JP2007050617
申请日：2007-02-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SETSU KOSHU , SAI SEISAI , CHOI JAI-YOUNG , MIN YO-SEP , CHO GINSHU , YI DONG KEE
IPC分类号： H01L27/10 , H01L21/316 , H01L21/8247 , H01L27/115 , H01L27/28 , H01L29/06 , H01L29/788 , H01L29/792 , H01L51/05
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/51 , H01L29/513 , H01L29/7881 , Y10S977/721 , Y10S977/785 , Y10S977/943
摘要： PROBLEM TO BE SOLVED: To provide a memory device having nanocrystals, and to provide its manufacturing method. SOLUTION: The memory device comprises: a substrate; a source region and a drain region formed inside the substrate and located separately from each other; a memory cell formed on the substrate surface, connecting the source region and the drain region and having a plurality of nanocrystals, and a control gate formed on the memory cell, wherein the memory cell is equipped with a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer and having the plurality of nanocrystals. Thereby and by providing the second tunneling oxide layer having hydrophilicity which can incorporate an aminosilane group to impart an electrostatic attractive force, a monolayer arrangement of the nanocrystals becomes possible, control of device characteristics becomes possible, and the memory device exhibiting more improved device characteristics can be provided. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有纳米晶体的存储器件，并提供其制造方法。存储器件包括：衬底; 源极区域和漏极区域，其形成在所述衬底内并且彼此分离定位; 存储单元，其形成在所述基板表面上，连接所述源极区域和所述漏极区域并具有多个纳米晶体;以及控制栅极，形成在所述存储单元上，其中，所述存储单元配备有形成在所述基板上的第一隧穿氧化物层 ; 形成在第一隧道氧化物层上的第二隧穿氧化物层; 以及形成在第二隧道氧化物层上并具有多个纳米晶体的控制氧化物层。由此，通过提供具有亲水性的第二隧道氧化物层，其可以结合氨基硅烷基团以赋予静电吸引力，纳米晶体的单层布置成为可能，器件特性的控制变得可能，并且显示出更好的器件特性的存储器件可以提供。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005048171A Alloy type semiconductor nanocrystal and method for preparing the same and organic electroluminescence device 有权
标题翻译：合金型半导体纳米晶及其制备方法和有机电致发光器件
公开(公告)号：JP2005048171A
公开(公告)日：2005-02-24
申请号：JP2004206818
申请日：2004-07-14
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： CHO GINSHU , AHN TAE-KYUNG
IPC分类号： H05B33/14 , B82Y20/00 , C01B17/20 , C01B19/00 , C09K11/00 , C09K11/08 , C09K11/56 , C09K11/88 , C09K11/89 , H01L21/20 , H01L21/208 , H01L21/368 , H01L29/06 , H01L31/0256 , H01L51/00 , H01L51/42 , H01L51/50 , H05B33/00
CPC分类号： C09K11/883 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/52 , C30B7/00 , C30B7/005 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , H01L29/0665 , H01L29/0673 , H01L51/0059 , H01L51/0081 , H01L51/4213 , H01L51/5012 , H05B33/14 , Y10S977/777 , Y10S977/784 , Y10S977/785 , Y10S977/824 , Y10S977/825 , Y10T428/12028 , Y10T428/12049 , Y10T428/12181 , Y10T428/2982 , Y10T428/2991
摘要： PROBLEM TO BE SOLVED: To provide an alloy type semiconductor nanocrystal and method for preparing the same and an organic electroluminescence device. SOLUTION: The method for preparation of the semiconductor nanocrystal, includes a step of mixing one or more Group 12 metals or Group 12 metal precursors with a dispersing agent and a solvent followed by heating the mixture to obtain a Group 12 metal precursor solution; a step of dissolving one or more Group 16 elements or Group 16 element precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and a step of mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12 and 16 compound semiconductor nanocrystals prepared by the chemical wet preparation method, are stable and have high quantum efficiency and uniform sizes and shapes, and capable of preparing the Group 12 and 16 compound semiconductor nanocrystals of stable alloy type. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供合金型半导体纳米晶体及其制备方法和有机电致发光器件。解决方案：制备半导体纳米晶体的方法包括将一种或多种第12族金属或第12族金属前体与分散剂和溶剂混合，然后加热混合物以获得第12族金属前体溶液的步骤 ; 将一种或多种16族元素或16族元素前体溶解在配位溶剂中以获得第16族元素前体溶液的步骤; 以及将第12族金属前体溶液和第16族元素前体溶液混合以形成混合物的步骤，然后使该混合物反应生长半导体纳米晶体。通过化学湿式制备方法制备的第12和16族化合物半导体纳米晶体是稳定的，具有高量子效率和尺寸和形状均匀，并且能够制备稳定合金型的12族和16族化合物半导体纳米晶体。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP4182016B2 Transmission line type element and a manufacturing method thereof 有权
标题翻译：空值
公开(公告)号：JP4182016B2
公开(公告)日：2008-11-19
申请号：JP2004069120
申请日：2004-03-11
申请人：日本電気株式会社 , 株式会社Kri
发明人：浩一山口 , 憲司山田 , 章二樋口 , 良昌若林 , 弘和遠矢
IPC分类号： H01P1/00 , H01P3/08 , H01P3/18 , H01P11/00
CPC分类号： H01P3/18 , H01P11/003 , Y10S977/701 , Y10S977/712 , Y10S977/723 , Y10S977/773 , Y10S977/785

5. 发明专利

JP2007276105A Nano-wire composite body, its manufacturing method, resonator, and sensor 审中-公开
标题翻译：纳米复合体，其制造方法，谐振器和传感器
公开(公告)号：JP2007276105A
公开(公告)日：2007-10-25
申请号：JP2007045949
申请日：2007-02-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KWON SOON JAE , CHOI BYOUNG LYONG , LEE EUN-KYUNG , CHO KYUNG-SANG , HAN IN-TAEK , LEE JAE-HO , SAI SEISAI
IPC分类号： B82B1/00 , B82B3/00
CPC分类号： C30B29/62 , C23C16/045 , C30B25/005 , Y10S977/764 , Y10S977/784 , Y10S977/785 , Y10S977/953 , Y10S977/957
摘要： PROBLEM TO BE SOLVED: To provide a nano-wire composite body which can be small-sized, and can be easily manufactured, and can be applied to a resonator or a sensor. SOLUTION: The nano-wire composite body includes a template 10 having a plurality of hollow channels, nano-wires 20 formed in the respective channels of the template 10, and a functional portion 30 which is formed by removing a part of the template 10 and exposes one or more nano-wires 20 to the outside of the template. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种纳米线复合体，该纳米线复合体可以是小型的，并且可以容易地制造，并且可以应用于谐振器或传感器。解决方案：纳米线复合体包括具有多个中空通道的模板10，形成在模板10的相应通道中的纳米线20以及通过去除部分模具10形成的功能部分30 模板10并将一个或多个纳米线20暴露于模板的外部。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007260896A Production method for silicon nanowire using porous glass template, and element including silicon nanowire formed thereby 审中-公开
标题翻译：使用多孔玻璃模板的硅纳米管的生产方法，以及包括形成硅纳米管的元素
公开(公告)号：JP2007260896A
公开(公告)日：2007-10-11
申请号：JP2007055707
申请日：2007-03-06
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE EUN-KYUNG , CHOI BYOUNG LYONG , KWON SOON JAE , CHO KYUNG-SANG , LEE JAE-HO
IPC分类号： B82B3/00 , B82B1/00 , C01B33/021 , C23C14/14 , C23C16/24
CPC分类号： C30B29/06 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L31/1804 , H01L33/20 , H01S5/10 , H01S5/3031 , Y02E10/547 , Y02P70/521 , Y10S977/762 , Y10S977/778 , Y10S977/78 , Y10S977/784 , Y10S977/785 , Y10S977/932 , Y10S977/949
摘要： PROBLEM TO BE SOLVED: To provide a production method for a silicon nanowire allowing easy materialization of an element and allowing improvement of efficiency by a structure, and to provide the element including the silicon nanowire formed thereby.
SOLUTION: This production method for the silicon nanowire includes: a stage for doping erbium or an erbium precursor into a porous glass template including a plurality of wire-like pores; a stage for disposing the glass template doped with erbium or the erbium precursor on a substrate formed with a metal catalyst layer such that one-side opening parts of the wire-like pores face the metal catalyst layer; and a stage for forming and growing the silicon nanowire along the pore inside the glass template.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够容易地实现元素的硅纳米线的制造方法，并且通过结构提高效率，并且提供包括由其形成的硅纳米线的元件。解决方案：该硅纳米线的制造方法包括：将铒或铒前体掺杂到包括多个线状孔的多孔玻璃模板中的阶段; 在形成有金属催化剂层的基板上配置掺杂有铒或铒前体的玻璃模板的阶段，使得线状孔的一侧开口部分面向金属催化剂层; 以及用于沿着玻璃模板内的孔形成和生长硅纳米线的阶段。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2012151480A Thin film semiconductor device and thin film semiconductor device manufacturing method 审中-公开
标题翻译：薄膜半导体器件和薄膜半导体器件制造方法
公开(公告)号：JP2012151480A
公开(公告)日：2012-08-09
申请号：JP2012015646
申请日：2012-01-27
申请人： Pst Sensors (Proprietary) Ltd , ピーエスティ・センサーズ・(プロプライエタリー)・リミテッドPst Sensors (Proprietary) Limited
发明人： MARGIT HARTING , DAVID THOMAS BRITTON
IPC分类号： H01L29/812 , H01L21/20 , H01L21/208 , H01L21/336 , H01L21/338 , H01L29/49 , H01L29/786 , H01L31/0224 , H01L31/0392 , H01L31/04 , H01L31/20
CPC分类号： H01L31/022425 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02521 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L29/16 , H01L29/66848 , H01L29/8126 , H01L31/03921 , H01L31/046 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10S977/775 , Y10S977/778 , Y10S977/785
摘要： PROBLEM TO BE SOLVED: To provide a thin film semiconductor device which achieves low cost, improved device efficiency and improved long-term stability.SOLUTION: A thin film semiconductor device comprises a base material of a material including cellulose, more particularly, of a paper sheet material, and multiple thin film layers of an inorganic material vapor deposited on a layer on the base material. At least one thin film layer among the multiple thin film layers of the inorganic material is printed either on the base material or a base thin film layer of the inorganic material. At least one thin film layer among the multiple thin film layers of the inorganic material includes an active semiconductor layer containing nanocrystalline silicon powder and a carrier containing polymer.
摘要翻译：要解决的问题：提供一种实现低成本，提高器件效率和改善长期稳定性的薄膜半导体器件。解决方案：薄膜半导体器件包括包含纤维素，更特别是纸片材料的材料的基材，以及沉积在基材上的层上的无机材料的多个薄膜层。无机材料的多个薄膜层中的至少一个薄膜层也印刷在基材或无机材料的基底薄膜层上。无机材料的多个薄膜层中的至少一个薄膜层包括含有纳米晶硅粉末和含载体的聚合物的活性半导体层。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP4971071B2 Carbon nanotube composite material and a method of manufacturing the same 有权
公开(公告)号：JP4971071B2
公开(公告)日：2012-07-11
申请号：JP2007210969
申请日：2007-08-13
申请人：ツィンファユニバーシティ , 鴻富錦精密工業(深▲セン▼)有限公司
发明人：守善 ▲ハン▼ , 長洪劉 , 慶威李
IPC分类号： B82B1/00 , B82B3/00 , B82Y30/00 , B82Y40/00 , C01B31/02 , H01B5/16 , H01B13/00
CPC分类号： C08L63/00 , B82Y10/00 , B82Y30/00 , C08K7/22 , Y10S977/778 , Y10S977/779 , Y10S977/783 , Y10S977/785 , Y10S977/786 , Y10S977/787 , Y10T428/24994 , Y10T428/249942 , Y10T428/249943
摘要： A CNT composite (10) includes a matrix (14) and a number of CNTs (12) embedded in the matrix. The matrix has a surface (102) and an opposite surface (104). Head portions of the respective CNTs are consistently oriented, parallel to the surfaces of the matrix. A method for manufacturing the composite includes (a) providing a substrate and depositing a catalyst film on the substrate; (b) forming the array of CNTs via the catalyst film on the substrate; (c) immersing the CNTs in a liquid matrix material, infusing the liquid matrix material into the array of CNTs; (d) taking the carbon nanotubes with the infused matrix out of the liquid matrix; (e) pressing the still-soft matrix and the CNTs therein, in order to arrange the CNTs consistently and parallel to the surfaces of the matrix; and (f) solidifying and peeling away the matrix to produce the CNT composite.

9. 发明专利

JP2008538225A Template synthesis semiconductor particles and a method of manufacturing 有权
公开(公告)号：JP2008538225A
公开(公告)日：2008-10-16
申请号：JP2008504236
申请日：2006-03-27
申请人：スリーエムイノベイティブプロパティズカンパニー
发明人：エス．ウェンドランド，マイケル , アイ．バケット，メアリー , エー．ラコウ，ニール
IPC分类号： C08K3/10 , B82B1/00 , B82B3/00 , C08G81/00 , C08G85/00 , C08L101/00 , H01L29/06 , H01L29/22
CPC分类号： C08G83/003 , C08J3/12 , C08J3/126 , C08J3/14 , C08J2300/00 , C08J2300/202 , C30B7/00 , Y10S977/754 , Y10S977/783 , Y10S977/785 , Y10S977/896 , Y10S977/897
摘要：架橋された、コア抜きされたデンドリマー内の金属カルコゲニドなどの半導体粒子の複合体粒子が記載されている。さらに、複合体粒子および、複合体粒子を含有する組成物の製造方法が記載されている。

10. 发明专利

JP2004523753A Temperature sensing composition 审中-公开
公开(公告)号：JP2004523753A
公开(公告)日：2004-08-05
申请号：JP2002564548
申请日：2002-02-07
申请人：マサチューセッツインスティテュートオブテクノロジーMassachusetts Institute of Technology
发明人：グレンダブリュー．ウォーカー， , ヴィクラムシー．サンダー， , ダニエルジー．ノセラ， , アルフレッドエイ．バーニー， , マウンギジー．バウェンディ， , クリスティーナエム．ラドジンスキ，
IPC分类号： G01L11/02 , G01K11/12 , G01K11/20
CPC分类号： G01K11/20 , B82Y15/00 , B82Y30/00 , G01K2211/00 , H01L21/02477 , H01L21/02521 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , Y10S977/778 , Y10S977/779 , Y10S977/785 , Y10S977/813 , Y10S977/815 , Y10S977/816 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/824
摘要：温度検知組成物は、半導体ナノ結晶のような無機材料を含み得る。このナノ結晶は、信頼性がありかつ正確な温度インジケータであり得る。ナノ結晶の放射強度は、温度によって変動し、そして表面温度に高度に感受性であり得る。このナノ結晶は、バインダーを用いて処理されてマトリクスを形成し得、そのマトリクスは、そのナノ結晶の表面の化学的性質を変更することによって変動し得る。適合性外層を有するナノ結晶は、コーティング処方物中に組み込まれ得、そしてその温度検知放射特性を保持し得る。

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