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    • 10. 发明专利
    • Material for forming barrier film and method for forming pattern using the same
    • 用于形成障碍膜的材料和使用其形成图案的方法
    • JP2005275365A
    • 2005-10-06
    • JP2004361058
    • 2004-12-14
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • ENDO MASATAKASASAKO MASARU
    • G03F7/11G03C5/00G03F7/00G03F7/09G03F7/20H01L21/00H01L21/027H01L21/84
    • G03F7/2041G03F7/11Y10S430/119Y10S430/123
    • PROBLEM TO BE SOLVED: To obtain a fine pattern having a preferable profile by preventing the influence of an immersion liquid to be used for immersion lithography on a resist film. SOLUTION: A resist film 102 comprising a chemically amplified resist is formed on a substrate 101. Subsequently, a barrier film 103 is formed on the resist film 102, the barrier film preventing the elution of the component in the resist film into the immersion liquid or preventing the permeation of the immersion liquid into the resist film 102. Thereafter, with the immersion liquid 104 provided on the barrier film 103, the resist film 102 is selectively irradiated with exposure light 105 for pattern exposure through the barrier film 103. After the barrier film 103 is removed, the resist film 102 subjected to pattern exposure is developed to form a resist pattern 102a from the resist film 102. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了通过防止用于浸渍光刻的浸渍液体对抗蚀剂膜的影响而获得具有优选轮廓的精细图案。 解决方案:在基板101上形成包括化学放大型抗蚀剂的抗蚀剂膜102.随后,在抗蚀剂膜102上形成阻挡膜103,阻挡膜阻止抗蚀剂膜中的成分溶解到 浸没液体或防止浸入液体渗透到抗蚀剂膜102中。此后,通过设置在阻挡膜103上的浸渍液体104,通过阻挡膜103选择性地照射用于图案曝光的曝光光105的抗蚀剂膜102。 在去除阻挡膜103之后,进行图案曝光的抗蚀剂膜102被显影以形成抗蚀剂图案102a。版权所有(C)2006,JPO&NCIPI