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2. 发明专利

JPS5922374A Manufacture of green light-emitting diode 失效
标题翻译：绿色发光二极管的制造
公开(公告)号：JPS5922374A
公开(公告)日：1984-02-04
申请号：JP13272482
申请日：1982-07-28
申请人： Matsushita Electric Ind Co Ltd
发明人： KAWABATA TOSHIHARU , FURUIKE SUSUMU , MATSUDA TOSHIO , IWASA HITOO
IPC分类号： H01L21/208 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
摘要： PURPOSE: To form the GaP green LED of high radiant power outputs with excellent reproducibility by using a GaP substrate, which has been used as it is so far as a GaP substrate functioning as a starting material for the GaP green LED.
CONSTITUTION: An N type GaP epitaxial layer of thickness, through which the dislocation density of the surface reaches 1×10
4 cm
-2 or less, or more is grown on an N type gallium phosphide (GaP) substrate in not less than 100μm thickness, and a P type GaP epitaxial layer is grown on said N type GaP epitaxial layer. According to such a method, dislocation density in the vicinity of a P-N junction is reduced largely even when the GaP substrate having normal dislocation density is used, thus obtaining the GaP green LED of high radiant power outputs. Yield on manufacture is improved largely because the distribution of radiant power outputs in a single GaP wafer can be equalized.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过使用已被使用的GaP基板，作为GaP绿色LED的起始材料的GaP基板，形成具有优异再现性的高辐射功率输出的GaP绿色LED。构成：N型GaP外延层的厚度在表面的位错密度达到1×10 -4 cm -2以下，在N型磷化镓（GaP）衬底上生长不少于 100μm厚，并且在所述N型GaP外延层上生长P型GaP外延层。根据这种方法，即使使用具有正常位错密度的GaP衬底，P-N结附近的位错密度也大大降低，从而获得高辐射功率输出的GaP绿色LED。在制造上的产量大大提高，因为单个GaP晶片中的辐射功率输出的分布可以相等。

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