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1. 发明专利

JP2012084878A Copper alloy bonding wire for semiconductor 有权
标题翻译：铜合金接线用于半导体
公开(公告)号：JP2012084878A
公开(公告)日：2012-04-26
申请号：JP2011219308
申请日：2011-10-03
申请人： Nippon Steel Materials Co Ltd , Nittetsu Micro Metal:Kk , 新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル
发明人： UNO TOMOHIRO , TERAJIMA SHINICHI , YAMADA TAKASHI , ODA TAIZO
IPC分类号： H01L21/60 , C22C9/00 , C22F1/00 , C22F1/02 , C22F1/08
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： PROBLEM TO BE SOLVED: To provide a cupreous bonding wire for a semiconductor device, inexpensive in material cost, excellent in PCT reliability under high humidity and high temperature environment, and having good TCT reliability of heat cycle test, good ball press shape, good wedge bondability, and good loop formability.SOLUTION: The copper alloy bonding wire for semiconductor is formed by a drawing processing of a copper alloy, containing 0.13 to 1.15 mass% of Pd, the remainder of which is composed of copper and unavoidable impurities. The average size of crystal grains at the wire cross section which is in parallel with a wire longitudinal direction is 2 μm or larger and 1.5 times the wire diameter or less.
摘要翻译：要解决的问题：为了提供一种用于半导体器件的铜线接合线，材料成本低廉，在高湿度和高温环境下的PCT可靠性优异，并且具有良好的热循环测试的TCT可靠性，良好的滚珠形状楔形粘结性好，环形成性好。解决方案：用于半导体的铜合金接合线通过铜合金的拉伸加工形成，该铜合金含有0.13〜1.15质量％的Pd，其余部分由铜和不可避免的杂质构成。与导线纵向平行的线截面的晶粒的平均尺寸为2μm以上，为线径的1.5倍以下。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP4866490B2 Semiconductor copper alloy bonding wire 有权
公开(公告)号：JP4866490B2
公开(公告)日：2012-02-01
申请号：JP2011519918
申请日：2010-06-23
申请人：新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル
发明人：智裕宇野 , 晋一寺嶋 , 大造小田 , 隆山田
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B5/02
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

3. 发明专利

JP2016517623A ボンディング用途のための被覆ワイヤ审中-公开
标题翻译：用于结合应用程序包线
公开(公告)号：JP2016517623A
公开(公告)日：2016-06-16
申请号：JP2015553029
申请日：2013-12-18
申请人：ヘレウスドイチェラントゲーエムベーハーウントカンパニーカーゲー , ヘレウスドイチェラントゲーエムベーハーウントカンパニーカーゲー
发明人：オイゲンミルケ , オイゲンミルケ , ユルゲンシャーフ , ユルゲンシャーフ
IPC分类号： H01L21/60 , C23C18/02 , C23C26/00 , C25D5/10 , C25D5/50 , C25D7/06
CPC分类号： B23K20/007 , B23K20/10 , B23K35/0261 , B23K35/0272 , B23K35/30 , B23K35/3006 , B23K35/302 , B23K35/322 , B23K35/40 , B23K35/404 , B23K2201/42 , C23C14/14 , C23C18/08 , C23C28/00 , C23C30/00 , C25D5/34 , C25D7/0607 , H01B1/026 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L24/78 , H01L24/85 , H01L2224/05624 , H01L2224/43125 , H01L2224/432 , H01L2224/4321 , H01L2224/435 , H01L2224/43823 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45663 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48455 , H01L2224/48465 , H01L2224/48472 , H01L2224/48824 , H01L2224/85181 , H01L2224/85801 , H01L2924/00011 , H01L2924/01076 , H01L2924/12044 , H01L2924/181 , H05K1/09 , H05K3/34 , H05K2201/10287 , H05K2203/049 , Y10T428/12875 , Y10T428/12889 , H01L2924/00014 , H01L2924/00 , H01L2924/20109 , H01L2924/2011 , H01L2924/01046 , H01L2924/01006 , H01L2924/01001 , H01L2924/01008 , H01L2924/01007 , H01L2924/01204 , H01L2924/013 , H01L2924/20751 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20752 , H01L2924/01014 , H01L2924/01029 , H01L2924/00013 , H01L2924/00012 , H01L2924/01049 , H01L2924/01005 , H01L2924/01004 , H01L2924/01033
摘要：本発明は、表面を有するコアであって、銅および銀からなる群から選択されるコア主成分を含むコアと、少なくとも部分的にコアの表面の上に重なるコーティング層であって、パラジウム、白金、金、ロジウム、ルテニウム、オスミウムおよびイリジウムの群から選択されるコーティング成分を少なくとも10%の量で成分として含むコーティング層と、を含むボンディングワイヤであって、コーティング層が、コアの主成分を少なくとも10%の量で成分として含むことを特徴とするボンディングワイヤに関する。【選択図】なし
摘要翻译：本发明提供具有表面的芯，其包括芯的芯组成，主要由选自铜和银的涂层覆盖至少部分地在核心表面，钯，铂的，金，铑，钌，其包括覆盖层的接合线，一个含有如选自锇和铱至少10％时，被覆层中，至少所述芯的主要成分中选择的涂料组分的量的部件在与接合线的10％的量，其特征在于：它包括作为一个组件。系统技术领域

4. 发明专利

JP5360179B2 Semiconductor copper alloy bonding wire 有权
公开(公告)号：JP5360179B2
公开(公告)日：2013-12-04
申请号：JP2011219314
申请日：2011-10-03
申请人：新日鉄住金マテリアルズ株式会社 , 日鉄住金マイクロメタル株式会社
发明人：智裕宇野 , 晋一寺嶋 , 隆山田 , 大造小田
IPC分类号： H01L21/60 , C22C9/00 , C22C21/02 , C22F1/00 , C22F1/08
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

5. 发明专利

JP3891282B2 Bonding wire 有权
标题翻译：空值
公开(公告)号：JP3891282B2
公开(公告)日：2007-03-14
申请号：JP2002290227
申请日：2002-10-02
申请人：住友金属鉱山株式会社
发明人：純女屋
IPC分类号： H01L21/60
CPC分类号： H01L2224/43 , H01L2224/4321 , H01L2224/435 , H01L2224/43847 , H01L2224/43848 , H01L2224/45 , H01L2224/45012 , H01L2224/45013 , H01L2224/45015 , H01L2224/45016 , H01L2224/45144 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/014 , H01L2924/14 , H01L2924/20754 , H01L2924/00015 , H01L2224/48 , H01L2924/00012

6. 发明专利

JP3367544B2 Bonding gold alloy thin wire and a method of manufacturing the same 失效
标题翻译：空值
公开(公告)号：JP3367544B2
公开(公告)日：2003-01-14
申请号：JP21478895
申请日：1995-08-23
申请人：田中電子工業株式会社
发明人：利孝三村 , 一光板橋
IPC分类号： H01L21/60 , C22C5/02 , H01L23/49
CPC分类号： H01L24/745 , C22C5/02 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/435 , H01L2224/45015 , H01L2224/45144 , H01L2224/45164 , H01L2224/45565 , H01L2224/45644 , H01L2224/48624 , H01L2224/745 , H01L2924/00011 , H01L2924/01013 , H01L2924/0102 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/01004 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/01006
摘要： There are provided a thin gold alloy wire for semiconductor chip bonding which is extremely useful in reducing the size of a semiconductor device and attaining a higher density, as well as a method for manufacturing the same. The thin gold alloy wire essentially consists of the invention's predetermined amounts of elements selected from Pt, Pd, Be, Ge, Ca, La, Y and Eu and the balance being Au and incidental impurity and has an elongation of 3% to 8% and a Young's modulus of 6,800 to 9,000 kgf/mm . Since the thin wire is high in strength in spite of a small diameter, the occurrence of wire breaking during wiring and use is diminished and the deterioration of bonding strength after standing at a high temperature is reduced, so it is possible to suppress the breaking of the wire under vibration. By cooling a molten gold alloy 1 of the composition according to the invention within a crucible from the lower end toward the upper end of the crucible it is made possible to obtain positively and relatively easily a thin gold alloy wire having the aforesaid alloy composition and having an elongation of 3% to 8% and a Young's modulus of 6,800 to 9,000 kgf/mm .
摘要翻译：提供了用于半导体芯片接合的薄金合金线，其在减小半导体器件的尺寸和获得更高密度方面非常有用，以及其制造方法。薄金合金丝主要由本发明预定量的选自Pt，Pd，Be，Ge，Ca，La，Y和Eu的元素组成，余量为Au和杂质，其伸长率为3％至8％，杨氏模量为6,800至9,000 kgf / mm 2。由于尽管直径小，细线强度高，在布线和使用期间发生断线的现象减少，并且在高温下放置后的接合强度的劣化降低，因此可以抑制电线振动。通过将本发明组合物的熔融金合金1从坩埚的下端朝向坩埚的上端冷却，能够正确地，相对容易地获得具有上述合金组成的薄金合金丝，并且具有伸长率为3％至8％，杨氏模量为6,800至9,000 kgf / mm 2。

7. 发明专利

JPS58191455A Lead wire for semiconductor device 失效
标题翻译：用于半导体器件的引线
公开(公告)号：JPS58191455A
公开(公告)日：1983-11-08
申请号：JP7413982
申请日：1982-04-30
申请人： Sumitomo Electric Ind Ltd
发明人： KUDOU KAZUNAO
IPC分类号： H01L23/48 , H01L21/48 , H01L23/49
CPC分类号： H01L24/745 , H01L2224/43 , H01L2224/435 , H01L2224/43822 , H01L2224/45 , H01L2224/4516 , H01L2224/45565 , H01L2224/45647 , H01L2224/45686 , H01L2224/45687 , H01L2224/745 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01074 , H01L2924/01082 , H01L2224/48 , H01L2924/013 , H01L2924/00012
摘要： PURPOSE:To obtain a probe lead wire for the miniature type glass diode having high reliability about glass sealing without generating trouble at welding by a method wherein a copper suboxide (Cu2O) film is formed on a core wire consisting of an iron-nickel alloy coated with copper. CONSTITUTION:The core wire consisting of the iron-nickel alloy coated with copper is drawn to form the wire 11 and is sent out from a supplyer 12, and is heated by a heating burner 13 to form the copper suboxide (Cu2O) film being stable in the room temperature. The wire is cooled rapidly in a cooling water tank 14, and is wound round a winder 16 as the wire 15 coated with the copper suboxide film being uniform in the room temperature. Rapid cooling of the wire 11 is performed within 0.04sec after the wire passed through the final burner nozzle of the heating burner 13. When rapid cooling is performed in the range of 0.04-0.15sec, thickness of the copper suboxide film is formed to 0.8-8mu, and although no hindrance is generated on the point of reliability about glass sealing, but welding of the probe of tungsten, etc., can not be performed favorably.
摘要翻译：目的：为了获得玻璃密封高度可靠性的微型玻璃二极管的探针引线，而不会在焊接时产生麻烦，因为其中在由铁 - 镍合金涂覆的铁 - 镍合金构成的芯线上形成低氧化铜（Cu2O）与铜。构成：由涂覆有铜的铁 - 镍合金构成的芯线被拉拔以形成电线11，并从供电器12送出，并由加热燃烧器13加热，形成稳定的低氧化铜（Cu2O）膜在室温下。电线在冷却水箱14中快速冷却，并且在室温下均匀涂覆有低氧化铝薄膜的金属丝15上缠绕在卷绕机16上。在焊丝通过加热燃烧器13的最终燃烧器喷嘴之后的0.04秒内进行电线11的快速冷却。当快速冷却在0.04-0.15秒的范围内进行时，低氧化铜膜的厚度形成为0.8 -8mu，虽然在玻璃密封的可靠性方面没有产生障碍，但是钨等的探针的焊接不能有利地进行。

8. 发明专利

JP5246314B2 Semiconductor copper alloy bonding wire 有权
公开(公告)号：JP5246314B2
公开(公告)日：2013-07-24
申请号：JP2011219308
申请日：2011-10-03
申请人：新日鉄住金マテリアルズ株式会社 , 日鉄住金マイクロメタル株式会社
发明人：智裕宇野 , 晋一寺嶋 , 隆山田 , 大造小田
IPC分类号： C22C9/00 , C22F1/00 , C22F1/02 , C22F1/08 , H01L21/60
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

9. 发明专利

JPWO2010150814A1 半導体用銅合金ボンディングワイヤ有权
公开(公告)号：JPWO2010150814A1
公开(公告)日：2012-12-10
申请号：JP2011519918
申请日：2010-06-23
申请人：新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル
发明人：宇野　智裕 , 智裕宇野 , 寺嶋　晋一 , 晋一寺嶋 , 山田　隆 , 隆山田 , 大造小田 , 大造小田
IPC分类号： C22C9/00 , C22F1/08 , H01B5/02
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要：本発明は、材料費が安価で、高湿高温環境でのPCT信頼性に優れ、さらに熱サイクル試験のTCT信頼性、ボール圧着形状、ウェッジ接合性、ループ形成性等も良好である半導体素子用銅系ボンディングワイヤを提供することを目的とする。Pdを0.13〜1.15質量%含有し、残部が銅と不可避不純物とでなる銅合金を伸線加工してなることを特徴とする半導体用銅合金ボンディングワイヤ。

10. 发明专利

JP2012074706A Semiconductor device copper alloy bonding wire 有权
标题翻译：半导体器件铜合金接线
公开(公告)号：JP2012074706A
公开(公告)日：2012-04-12
申请号：JP2011219314
申请日：2011-10-03
申请人： Nippon Steel Materials Co Ltd , Nittetsu Micro Metal:Kk , 新日鉄マテリアルズ株式会社 , 株式会社日鉄マイクロメタル
发明人： UNO TOMOHIRO , TERAJIMA SHINICHI , YAMADA TAKASHI , ODA TAIZO
IPC分类号： H01L21/60 , C22C9/00 , C22C21/02 , C22F1/00 , C22F1/08
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device copper alloy bonding wire which has a reduced material cost, a good PCT reliability in a high humidity and high temperature environment, a good TCT reliability in a heat cycle test, a good shape of a pressure-welded ball, a good wedge bondability, and a good loop formability, and so on.SOLUTION: The semiconductor device copper alloy bonding wire is obtained by drawing a Cu alloy containing by mass, 0.13 to 1.15% of Pd and the balance comprising copper and inevitable impurities, and has a good ball deformation and a superior mass productivity.
摘要翻译：要解决的问题：为了提供一种半导体器件铜合金接合线，其具有降低的材料成本，在高湿度和高温环境中具有良好的PCT可靠性，在热循环测试中具有良好的TCT可靠性，良好的形状的压焊球，良好的楔形粘合性和良好的环形成性等。解决方案：半导体器件铜合金接合线是通过拉伸Cu合金，通过拉伸Cu合金，0.13〜1.15％的Pd，余量由铜和不可避免的杂质构成的，具有良好的球形变形和优异的批量生产率。版权所有（C）2012，JPO＆INPIT

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