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    • 6. 发明专利
    • Method for forming insulating film
    • 形成绝缘膜的方法
    • JP2011181537A
    • 2011-09-15
    • JP2010041353
    • 2010-02-26
    • Fujifilm Corp富士フイルム株式会社
    • YAMAMOTO HIROYUKI
    • H01L21/312C08F30/08C08F38/00H01L21/768H01L23/522
    • C08G61/12C08G2261/344C08G2261/46C08G2261/65
    • PROBLEM TO BE SOLVED: To provide a method for forming an insulating film, by which a film suitable for use as an interlayer dielectric in a semiconductor element device or the like and excellent in characteristics, such as a dielectric constant, can be efficiently manufactured. SOLUTION: A method for forming an insulating film includes: a film forming step of forming a film containing a polymer compound and a pore forming agent on a substrate, wherein the polymer compound is obtained by polymerizing a polyhedral oligomeric silsesquioxane compound having two or more unsaturated groups as substituent groups; an electron beam irradiation step of irradiating an electron beam onto the film: and a heating step of heating the film after the electron beam irradiation step to form the insulating film. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种用于形成绝缘膜的方法,通过该方法可以在半导体元件装置等中适合用作层间电介质的膜,并且具有优异的介电常数等特性, 有效地制造。 解决方案:一种用于形成绝缘膜的方法包括:在基材上形成含有高分子化合物和成孔剂的膜的成膜步骤,其中通过聚合具有两个以上的多面体低聚倍半硅氧烷化合物 或更多个不饱和基团作为取代基; 对电子束照射电子束的电子束照射工序;以及在电子束照射工序后加热该膜的加热工序,形成绝缘膜。 版权所有(C)2011,JPO&INPIT
    • 8. 发明专利
    • Film-forming composition, silica-based film, method for forming the same and laminated film
    • 成膜组合物,二氧化硅膜,其形成方法和层压膜
    • JP2005133040A
    • 2005-05-26
    • JP2003373611
    • 2003-10-31
    • Jsr CorpJsr株式会社
    • AKIYAMA MASAHIROKOO MASAKIHATTORI SEITAROKUROSAWA TAKAHIKO
    • B32B27/00C08G61/02C08G65/48C08G77/20C09D5/25C09D183/07C09D183/14
    • C08G2261/312C08G2261/46C08G2261/65C08G2261/80
    • PROBLEM TO BE SOLVED: To provide a composition for forming a film having a low specific dielectric constant and excellent in close adhesion, a silica-based film formed by using the film-forming composition, a method for forming the same and a laminated film including the silica-based film. SOLUTION: This film-forming composition contains (A) at least 1 kind of a silane compound selected from a compound (1) expressed by the following general formula (1), a compound (2) expressed by the general formula (2) and a compound (3) expressed by the general formula (3), and (B) a hydrolyzed condensate obtained by performing the hydrolyzing condensation of at least 1 kind of the silane compound selected from a compound (4) expressed by the general formula (4) and a compound (5) expressed by the general formula (5). The general formulae (1): R a Si(OR 1 ) 4-a , (2): Si(OR 2 ) 4 , (3): R 3 b (R 4 O) 3-b Si(R 7 ) d Si(OR 5 ) 3-c R 6 c . COPYRIGHT: (C)2005,JPO&NCIPI
    • 解决问题的方法为了提供一种用于形成具有低比介电常数和紧密粘附性优异的膜的组合物,使用该成膜组合物形成的二氧化硅基膜,其形成方法和 包括二氧化硅基膜的层压膜。 解决方案:该成膜组合物含有(A)选自由以下通式(1)表示的化合物(1)中的至少1种硅烷化合物,由通式(1)表示的化合物(2) 2)和由通式(3)表示的化合物(3)和(B)通过进行至少1种选自由通式(1)表示的化合物(4)表示的化合物(4)的硅烷化合物的水解缩合而得到的水解缩合物 式(4)和由通式(5)表示的化合物(5)。 通式(1):R(S)S(OR SP)1-S SB(4)(2):Si(OR 2) 4 ,(3):R 3 b (R 4 3-b 的Si(R 7 ð的Si(OR 5 3-C ř 6 C 。 版权所有(C)2005,JPO&NCIPI