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    • 2. 发明专利
    • PACKAGE FOR SEMICONDUCTOR ELEMENT
    • JPH06342853A
    • 1994-12-13
    • JP24100293
    • 1993-09-28
    • TOKUYAMA SODA KK
    • MIYAHARA KENICHIRO
    • H01L23/02H01L23/08H01L23/12
    • PURPOSE:To lessen a self-inductance by a construction wherein electric parts connecting electrically internal and external leads for a power source and grounding of a package for a semiconductor element are formed in the shape of planes and these electric parts for the power source and grounding are disposed with a ceramic layer interposed. CONSTITUTION:A plane-shaped electric part 6 for a power source connecting an external lead 3 and an internal lead 2 for the power source electrically is joined on one surface of a frame-shaped ceramic layer 8, and a plane-shaped electric part 7 for grounding connecting an external lead 5 and an internal lead 4 for grounding electrically is joined on the other surface of the layer. A lead 10 for signals provided on the plane-shaped electric part 7 with a sealing material 9 interposed, the internal lead 2 for the power source and the internal lead 4 for grounding are wire-bonded to a semiconductor element 1 respectively. The characteristic impedance of the lead for signals can be controlled easily by the thickness of the sealing material and, moreover, crosstalk noise of a signal layer can also be prevented effectively.
    • 3. 发明专利
    • AMORPHOUS SILICON FILM AND MANUFACTURE THEREOF
    • JPH06326043A
    • 1994-11-25
    • JP4382794
    • 1994-03-15
    • TOKUYAMA SODA KK
    • AZUMA MASANOBUSHIMIZU ISAMU
    • H01L21/205H01L31/04
    • PURPOSE:To form an amorphous silicon film having excellent light-resistant deterioration characteristics at a fast growth rate by bringing the gaseous raw material of a specific chlorosilane compound and a hydrogen-containing gas excited by electron cyclotron resonance into contact under specific conditions. CONSTITUTION:A plasma forming chamber 2 is supplied with high-purity hydrogen as a plasma forming gas, and ECR plasma is formed. A film forming chamber 1 is supplied with a chlorosilane compound as a gaseous raw material shown in formula SiHxCl4-x (x represents an integer of 0-3) under the state, and gas plasma and a base material 3 heated at 200-500 deg.C are brought into contact, thus precipitating an amorphous silicon film. The atomic ratio (H/Cl) of hydrogen atoms in hydrogen gas fed into a film forming device to chlorine atoms in the chlorosilane compound is set in 0.1-50 at that time. Accordingly, the amorphous silicon film having excellent light-resistant deterioration characteristics and high quality can be formed at fast film precipitation speed.
    • 5. 发明专利
    • EMI COUNTER WIRING BOARD
    • JPH06310893A
    • 1994-11-04
    • JP9596893
    • 1993-04-22
    • TOKUYAMA SODA KK
    • KAWAHARA TAKEO
    • H05K1/02H05K1/09H05K3/46H05K9/00
    • PURPOSE:To increase wiring density and reduce noise, by directly laminating a symbol ink layer on the peripheral part of a conducting part for soldering a wiring pattern on the upper surface of an insulative board or an insulating layer or a conducting layer of conductive copper paste. CONSTITUTION:A conducting layer 2 wherein a pad part 7 for soldering as a soldering conducting part and a wiring pattern containing a through hole part 8 and an earth circuit 6 are formed is arranged on an insulative board 1. An insulating layer 3 is formed so as to cover the conducting layer 2. A conducting layer 4 composed of conductive copper paste which covers the insulating layer 3 is formed, and a part of the layer 14 electrically connects the conducting layer 2 with the earth circuit. A symbol ink layer 5 is laminated on the peripheral parts of the pad 7 for component, and the through hole 8 on the upper surface of the conducting layer 4 or the insulating layer 3 or the insulative board 1. Thereby a solder bridge is not generated at the time of component mount, and noise reduction effect can be effectively exhibited.
    • 6. 发明专利
    • METHOD AND APPARATUS FOR MEASURING THERMOELECTRIC CONVERSION CHARACTERISTIC
    • JPH06300719A
    • 1994-10-28
    • JP8963993
    • 1993-04-16
    • TOKUYAMA SODA KK
    • TACHIBANA SHOJIHIRANO KENICHI
    • G01N25/00H01L35/28
    • PURPOSE:To provide a new measuring method which measures the thermoelectric conversion characteristic of a sample piece precisely and simply and to provide an apparatus which is used for its measurement. CONSTITUTION:A sample stand 5 in which the support face of a sample piece 1 is constituted of a heating support face A composed of a metal body 2 having an insulator layer 17 on the surface and of a non-heated support face B composed of an insulator 3, a plurality of pairs of thermocouples 6, 7 and an electron-flux generating device 4 are provided in a vacuum chamber 11. The thermocouples 6, 7 of one pair are arranged on the heated support face A and the other thermocouples are arranged on the non-heated support face B so as to be capable of being moved respectively up and down. The electron-flux generating device 4 is arranged in a position in which the metal 2 constituting the heated support face A can be irradiated with an electron flux. A voltmeter 12 is connected across the thermocouples on the heated support face and the other thermocouples. The individual thermocouples 6, 7 are connected respectively to voltage-to-temperature converters 13, 14. The measuring apparatus, of a thermoelectric conversion characteristic, which has been constituted so as to be capable of measuring the temperature difference between the thermocouples brought into contact with the sample piece 1 place on the support stand and a potential difference in each point is used, and the potential difference and the temperature difference between two points of a high-temperature part and a low-temperature part of the sample piece 1 are measured.