专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS59197880A Beta-ray detector 失效
标题翻译：测试探测器
公开(公告)号：JPS59197880A
公开(公告)日：1984-11-09
申请号：JP7249183
申请日：1983-04-25
申请人： Yokogawa Hokushin Electric Corp
发明人： HOSOMATSU HARUO , SEKI NAOKI , YAMAZAKI TSUTOMU
IPC分类号： G01T1/24 , H01L31/09
CPC分类号： G01T1/241
摘要： PURPOSE:To enable detection of slight beta-rays with good accuracy by forming a barrier electrode on a compd. semiconductor base plate installed in proximity to the 1st radiation detector, and providing the 2nd radiation detector having a window which makes beta-rays hardly transmittable and X-rays easily transmittable and obtaining a differential signal. CONSTITUTION:A barrier electrode 11 provided on a semiconductor base plate 10 is made into a circular shape and the other barrier electrode is made into the ring shape installed around the electrode 11 apart at a slight space therefrom. The semiconductor base plate parts are made sensitive respectively to radiations and serve respectively as one radiation detector. The electrode 11 and a window part 31 covering the same constitute the 1st radiation detector 1 which detects the radiations transmitted through the window part 31. The electrode 12 and a window part 32 covering the same constitute the 2nd radiation detector 2. Only the output by the beta-rays made incident to the detector 1 is obtd. from an amplifier 4 as the outputs from the detectors 1, 2 by the braking X-rays are connected to opposite polarities from each other and are therefore negated with each other.
摘要翻译：目的：通过在化合物上形成阻挡电极，能够以良好的精度检测轻微的β射线。半导体基板安装在第一辐射检测器附近，并且提供具有使β射线几乎不透射的窗口的第二辐射检测器，并且X射线容易透射并获得差分信号。构成：设置在半导体基板10上的阻挡电极11被制成圆形形状，另一个阻挡电极被制成围绕电极11分开安装的环形，其间隔较小。半导体基板部分分别对辐射敏感，分别用作一个辐射检测器。电极11和覆盖该电极的窗部31构成检测通过窗部31透射的辐射的第1放射线检测器1.电极12和覆盖其的窗部32构成第2辐射检测器2。发现入射到检测器1的β射线是可以接受的。作为来自检测器1,2的通过制动X射线的输出的放大器4彼此相反的极性连接，因此彼此不相关。

2. 发明专利

JPS61106498A Method for growing cdte crystal 失效
标题翻译：生长蛋白晶体的方法
公开(公告)号：JPS61106498A
公开(公告)日：1986-05-24
申请号：JP14257084
申请日：1984-07-10
申请人： Yokogawa Hokushin Electric Corp
发明人： WADA MORIO , SUZUKI JUNICHI , YAMAZAKI TSUTOMU
IPC分类号： C30B29/48 , C30B11/00 , C30B29/46
摘要： PURPOSE: To obtain the titled crystal having uniform resistivity by eliminating a temp. gradient in a furnace after the CdTe crystal is grown, and cooling slowly the furnace while keeping a uniform temp. distribution in the Bridgman furnace having a temp. gradient between the upper and the lower part.
CONSTITUTION: Cd and Te3 in a stoichiometric ratio are charged in a vessel 2, then allowed to react with each other at a low temp. of about 800°C, and alloyed. The alloy is charged into a Bridgman furnace 4 having such a temp. gradient that the temp. of the upper furnace (a) is regulated to 1,150°C and that of the lower furnace (b) is regulated to about 950°C, and allowed to react at about 1,150°C for several hours. Then the vessel 2 is moved to the lower furnace (b) at 950°C, the temp. of the upper furnace (a) is equalized to the temp. of the lower furnace (b), and then the temp. of the upper and the lower furnace is reduced at 10°C/hr cooling velocity.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过消除温度来获得具有均匀电阻率的标题晶体。在CdTe晶体生长之后的炉中梯度，并在保持均匀温度的同时缓慢冷却炉。在布里奇曼炉中分布有温度上部和下部之间的梯度。构成：将化学计量比的Cd和Te 3装入容器2中，然后在低温下彼此反应。约800摄氏度，并合金化。将合金装入具有这种温度的Bridgman炉4中。渐变，将上炉（a）调节至1,150℃，将下炉（b）调节至约950℃，并在约1,150℃下反应数小时。然后将容器2在950℃下移动到下炉（b）的上炉（a）的温度等于温度的下炉（b），然后温度上，下炉的冷却速度以10摄氏度/小时的速度降低。

3. 发明专利

JPS6191100A Crystal growth of cdte 失效
标题翻译： CDTE的晶体生长
公开(公告)号：JPS6191100A
公开(公告)日：1986-05-09
申请号：JP21311584
申请日：1984-10-11
申请人： Yokogawa Hokushin Electric Corp
发明人： WADA MORIO , SUZUKI JUNICHI , YAMAZAKI TSUTOMU
IPC分类号： C30B29/48 , C30B29/46
摘要： PURPOSE: The zone where Cd and Te react to form CdTe is formed in a heating furnace as narrow as possible and the narrow zone is moved in the vessel gradually to effect synthetic reactions whereby the titled crystal can be allowed to grow without breakage of the vessel.
CONSTITUTION: As shown in Figure (a), the entire area inside the furnace 2 is set to about 350°C and only a narrow zone at the center of the furnace is heated up to about 600°C. Cd melting at 350°C is in the molten state. The vessel 1 is allowed to go down gradually and at the time when the whole part of the vessel 1 reaches the lower position of 350°C, the vessel is pulled up at the same speed as going down and the narrow range at the center is set to about 950°C to effect the same operation. Then, as shown in Figure (c), the entire area of the furnace is raised up to 950°C and the temperature is kept for 2W4hr to complete the reaction to give CdTe crystals. The resultant crystals are treated according to the known THM method to give single crystal of CdTe. This method can avoid Cd and Te in the vessel to react completely at the same time, causing no steep temperature rise, and prevents the vessel from being damaged.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：Cd和Te反应形成CdTe的区域在尽可能窄的加热炉中形成，并且窄带在容器中逐渐移动以进行合成反应，从而可以使标题晶体生长而不破坏容器。构成：如图（a）所示，炉2内部的整个区域设定为约350摄氏度，炉子中心只有较窄的区域被加热至约600摄氏度。在350摄氏度的镉熔融处于熔融状态。允许容器1逐渐下降，并且当容器1的整个部分到达350摄氏度的下部位置时，容器以与下降相同的速度被拉起，并且在中心处的窄范围设定为约950℃以进行相同的操作。然后，如图（c）所示，炉子的整个面积升高到950℃，保持2-4小时，完成反应，得到CdTe晶体。根据已知的THM方法处理所得晶体以得到CdTe的单晶。该方法可以避免容器内的Cd和Te同时完全反应，不会引起陡峭的温升，防止容器受损。

4. 发明专利

JPS59196447A Radiation detector 失效
标题翻译：辐射探测器
公开(公告)号：JPS59196447A
公开(公告)日：1984-11-07
申请号：JP7123883
申请日：1983-04-22
申请人： Yokogawa Hokushin Electric Corp
发明人： HOSOMATSU HARUO , SEKI NAOKI , YAMAZAKI TSUTOMU
IPC分类号： H01J47/02 , A61B6/03 , G01N23/04 , G01N23/08 , H01L31/09
CPC分类号： G01N23/083
摘要： PURPOSE:To remove the effect of scattered X ray noise, by juxtaposing a detector, which receives scattered X rays, in the vicinity of a detector, which receives transmitted X rays, and differentially combining the outputs of both detectors. CONSTITUTION:A radiation detector comprises a plurality of barrier electrodes 41, 42, 43... which are provided on a semiconductor substrate 20. The radiation detector is arranged on the approximately same plane with a slice plane of a body to be checked 3 so that the transmitted radiation (an arrow with a solid line) through the body to be checked 3. Thus a first multi-channel radiation detector 2a is constituted. Barrier electrodes 51, 52, 53... are juxtaposed with the radiation detector 2a so that the scattered radiation (an arrow with a broken line) from the body to be checked is received. Thus a second multi-channel radiation detector 2b is constituted. The multi-channel radiation detectors 2a and 2b are conected in series at reverse polarities to each other. The differential output of both radiation detectors is applied to an amplifier 8.
摘要翻译：目的：通过将接收散射的X射线的检测器并入接收透射的X射线的检测器附近，并差分地组合两个检测器的输出，来消除散射的X射线噪声的影响。构成：放射线检测器包括设置在半导体基板20上的多个阻挡电极41,42,43 ...。辐射检测器被布置在与要检查的主体3的切片平面大致相同的平面上，因此通过要检查的身体的透射辐射（具有实线的箭头）3.因此构成第一多通道辐射检测器2a。阻挡电极51,52,53 ...与放射线检测器2a并置，从而接收来自被检体的散射辐射（具有虚线的箭头）。因此，构成第二多通道辐射检测器2b。多通道辐射检测器2a和2b以相反的极性彼此串联连接。两个辐射检测器的差分输出被施加到放大器8。

5. 发明专利

JPS60260877A RADIATION DETECTOR 失效
公开(公告)号：JPS60260877A
公开(公告)日：1985-12-24
申请号：JP11737784
申请日：1984-06-07
申请人： YOKOGAWA HOKUSHIN ELECTRIC
发明人： YAMAZAKI TSUTOMU , WADA MORIO
IPC分类号： G01T1/24 , H01L31/09 , H01L31/115
摘要： PURPOSE:To improve the sensitivity of a radiation detector by providing plural grooves on the surface of an n type CdTe crystal plate to which radiations are irradiated and forming electrodes by electroless plating onto the surface on which the plural grooves are provided. CONSTITUTION:The plural grooves 3 are provided to the surface of the n type CdTe crystal plate 1 to which the radiations are irradiated. Gold is plated 4 on the surface thereof. Indium electrodes are provided to the respective electrodes on the rear surface plated with the gold. The thickness of a P type CdTe layer 10 is just t1 in the peak part (a), (e) of the grooves 3 and the bottom (c) of the grooves 3 but the layer 10 of the P type CdTe is apparently thicker by as much as the depth of the grooves 3 in the wall parts of the grooves 3 and has consequently the thickness t2. Thus these wall parts react more strongly with the dradiations.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式