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1. 发明专利

JP2004342872A Pattern drawing method and mask for contact x-ray lithography 审中-公开
标题翻译：用于联系X射线光刻的图形绘制方法和掩模
公开(公告)号：JP2004342872A
公开(公告)日：2004-12-02
申请号：JP2003138338
申请日：2003-05-16
申请人： Univ Waseda , 学校法人早稲田大学
发明人： TOYODA EIJIRO , WASHIO MASAICHI
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a pattern drawing method for contact X-ray lithography wherein drawing is carried out by moving the zeroth-order diffraction image of an opening formed in a mask relatively with respect to a substrate applied with a photosensitive agent, and which enables high-contrast continuous drawing.
SOLUTION: Using the mask (50) which is such that annular openings (54) are formed in an X-ray absorbing layer (52) formed on a mask substrate (8) which is virtually transparent with respect to X-rays, the light intensity is enhanced at positions on the substrate (6) along which the central line of each opening (54) passes by the diffraction effect of the openings (54) and the phase shift effect of the X-ray absorbing layer (52).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于接触X射线光刻的图案描绘方法，其中通过相对于施加感光体的基底移动形成在掩模中的开口的零级衍射图像来进行拉伸代理，并且可实现高对比度连续绘图。解决方案：使用在相对于X射线实质上透明的掩模基板（8）上形成的X射线吸收层（52）中形成环状开口（54）的掩模（50），在每个开口（54）的中心线通过开口（54）的衍射效应的基板（6）上的位置和X射线吸收层（52）的相移效应的位置处增强了光强度）。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005166708A Drawing method of contact x-ray lithography 审中-公开
标题翻译：接触X射线光刻的绘图方法
公开(公告)号：JP2005166708A
公开(公告)日：2005-06-23
申请号：JP2003399727
申请日：2003-11-28
申请人： Univ Waseda , 学校法人早稲田大学
发明人： TOYODA EIJIRO , WASHIO MASAICHI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To realize high contrast drawing in a pattern drawing method of a close X-ray lithography, with which an intermittent parallel linear pattern where parallel lines in a regular interval (p) are periodically intermittent at every fixed interval is drawn.
SOLUTION: (a) A thin film of resist (11) is formed on the surface of a substrate (6) serving as an object of exposure. (b) A mask for forming LS pattern, which has a pitch (2p) twice as much as a parallel line of the intermittent parallel linear pattern, is doubly exposed at two positions whose interval (1+2n)p ((n) is a "0" or positive integer.) is deviated in a space widthwise direction, and an LS pattern of one pitch (p) interval is formed in resist (11). (c) An unexposed continuous line of the LS pattern formed in resist (11) in the step (b) is parted and exposed by using a mask for forming spot pattern, in which a spot pattern is formed at a pitch of (1+m)p ((m) is an integer of one or above.) in the space width direction of the mask for forming LS pattern.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在紧密的X射线光刻的图形绘制方法中实现高对比度绘制，其中以每个固定间隔周期性地间断地以规则间隔（p）的平行线的间歇并行线图案被绘制解决方案：（a）在用作曝光对象的基板（6）的表面上形成抗蚀剂（11）薄膜。（b）用于形成LS图案的掩模，其间隔（2p）是间断平行线形图案的平行线的两倍，在间隔（1 + 2n）p（（n）为 “0”或正整数）在空间宽度方向上偏离，并且在抗蚀剂（11）中形成一个间距（p）间隔的LS图案。（c）通过使用用于形成点图案的掩模来分离并曝光在步骤（b）中形成在抗蚀剂（11）中的LS图案的未曝光连续线，其中以（1+ m）在形成LS图案的掩模的空间宽度方向上p（（m）是1以上的整数）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2003124099A PATTERN-DRAWING METHOD, MASK, AND MASK MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003124099A
公开(公告)日：2003-04-25
申请号：JP2001318562
申请日：2001-10-16
申请人： UNIV WASEDA
发明人： TOYODA EIJIRO , WASHIO MASAICHI
IPC分类号： G03F1/22 , G03F1/32 , G03F1/68 , G03F1/70 , G03F1/76 , G03F1/80 , G03F7/20 , H01L21/027 , G03F1/08 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To freely form a desired exposure pattern, and to improve general versatility in a mask for decreasing the costs of the mask when forming an exposure image that is reduced as compared with a mask pattern by diffraction effect in the opening edge of the mask pattern or by adding phase shift effect to the diffraction one. SOLUTION: Masks (50, 150) are allowed to oppose a substrate at a specific interval. In the masks, exposure beam transmission regions (54, 154) having the same shape are regularly aligned two-dimensionally. A diffraction image is formed on the substrate. In the diffraction image, a zero-dimensional diffraction image in the transmission regions (54, 154) becomes smaller than the transmission regions (54, 154). The masks (50, 150) are relatively moved to the substrate for drawing by the zero-dimensional diffraction image. More specifically, the image of the opening of the mask pattern is formed at a small spot comprising the zero-dimensional diffraction image, and a desired pattern is drawn for exposure while the spot is being moved continuously or discontinuously.

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