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1. 发明专利

JP2010225478A PHOTOELECTRIC CONVERSION ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2010225478A
公开(公告)日：2010-10-07
申请号：JP2009072940
申请日：2009-03-24
申请人： ULVAC CORP
发明人： NAGATA TOMOHIRO , MURAKAMI HIROHIKO , KITAMURA YOSHIO
IPC分类号： H01M14/00 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion element of high conversion efficiency and its manufacturing method. SOLUTION: The photoelectric conversion element made by laminating a conductive support body, a photoelectric conversion layer 4, an electrolyte layer 5, and a counter electrode 3 in that order. The photoelectric conversion layer includes semiconductor particles 41, metal fine particles 44 adhered to the semiconductor particles, and further, sensitizing dye 43 adhered around the semiconductor particles and metal fine particles. COPYRIGHT: (C)2011,JPO&INPIT

2. 发明专利

JP2003126697A DISPERSION SOLUTION OF FINE PARTICLE OF PHOTOCATALYST AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：JP2003126697A
公开(公告)日：2003-05-07
申请号：JP2001330581
申请日：2001-10-29
申请人： KAWASAKI STEEL CO , ULVAC CORP
发明人： TAWARA TOMOYUKI , NOBUSAWA TATSUYA , TAKANO SHIGERU , MURAKAMI HIROHIKO , KOAKUTSU CHIZURU
IPC分类号： B01J27/24 , B01J35/02 , C09D1/00 , C09D5/00 , C09D7/12
摘要： PROBLEM TO BE SOLVED: To provide a dispersion solution of fine particles of a photocatalyst, in which fine particle powders of the photocatalyst exist in the homogeneous dispersion state, and which exhibits photocatalyst activity by irradiation with visible radiation, and a manufacturing method therefor. SOLUTION: The dispersion solution of the fine particles of the photocatalyst is composed of titanium-containing oxynitride exhibiting a catalyst function and/or a hydrophilic property by irradiation with visible radiation. A surface of the fine particles of the photocatalyst is modified by a peroxo group.

3. 发明专利

JP2002115059A METHOD FOR CONTROLLING DIAMETER OF GRAPHITE NANOFIBER 失效
公开(公告)号：JP2002115059A
公开(公告)日：2002-04-19
申请号：JP2000307963
申请日：2000-10-06
申请人： ULVAC CORP
发明人： HIRAKAWA MASAAKI , MURAKAMI HIROHIKO
IPC分类号： B82B3/00 , C01B31/02 , C23C16/26 , D01F9/127 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling the diameter of a graphite nanofiber which can be used as a carbon based electron emmision source. SOLUTION: A substrate obtained by forming a catalytic metallic thin film of Fe, Co or an alloy containing at least one kind of those metals on the surface of a glass substrate or an Si substrate so as to have a thickness of 10 to 50 nm in prescribed patterns or the substrate to be treated which has a noncatalytic metallic thin film formed under the catalytic metallic thin film in prescribed patterns is subjected to heat treatment in a vacuum, thereafter, a carbon- containing gas or gaseous hydrogen are introduced into the vacuum chamber from a position lower than the position where the substrate is placed, the pressure in the chamber is kept to almost one atmospheric pressure, and graphite nanofiber is grown only on the pattern parts on the substrate by a thermal CVD process.

4. 发明专利

JP2002115058A PROCESS FOR DEPOSITING GRAPHITE NANOFIBER THIN FILM BY THERMAL CVD PROCESS 失效
公开(公告)号：JP2002115058A
公开(公告)日：2002-04-19
申请号：JP2000307960
申请日：2000-10-06
申请人： ULVAC CORP
发明人： HIRAKAWA MASAAKI , MURAKAMI HIROHIKO
IPC分类号： B82B3/00 , C01B31/02 , C23C16/26 , D01F9/133 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To improve the adhesion between a metallic thin film undercoat layer and a substrate in the deposition of a graphite nanofiber thin film used for a carbon based electron emission source. SOLUTION: A substrate obtained by depositing the surface of a glass substrate or an Si substrate with a thin film of Fe, Co or an alloy containing at least one kind of those metals into prescribed patterns is placed in an evacuated vacuum chamber and is subjected to heat treatment in a vacuum, after that, a carbon-containing gas and gaseous hydrogen are introduced into the chamber, the pressure in the chamber is kept at about 1 atm., and graphite nanofiber is grown only on the pattern parts on the substrate by a thermal CVD process.

5. 发明专利

JP2001288625A GRAPHITE NANOFIBER, ELECTRON EMITTING SOURCE AND METHOD FOR PRODUCING THE SAME, DISPLAY ELEMENT HAVING THE ELECTRON EMITTING SOURCE, AND LITHIUM ION SECONDARY BATTERY 失效
公开(公告)号：JP2001288625A
公开(公告)日：2001-10-19
申请号：JP2001004550
申请日：2001-01-12
申请人： ULVAC CORP
发明人： MURAKAMI HIROHIKO , HIRAKAWA MASAAKI , TANAKA CHIAKI
IPC分类号： C01B31/02 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C23C16/26 , D01F9/127 , H01J1/30 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01M4/587 , H01M10/05 , H01M10/0525 , H01M4/02 , H01M4/58 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To provide a cathode material capable of achieving a high electron- emitting density and an electron-emitting properties in a low electric field, and further to provide an electron-emitting source having the material, a method for producing the electron-emitting source, a display element having the electron- emitting source and a lithium ion secondary battery obtained by using the carbonaceous material as an activate material for a cathode. SOLUTION: This graphite nanofiber material has a columnar structure obtained by laminating graphene sheets having truncated ice cream cone shapes through a catalytic metal, or a structure obtained by stacking small fragments of the graphene sheets having shapes along the surface shape of the catalytic metal through the catalytic metal. The catalytic metal is composed of Fe, Co or an alloy containing at least one kind of these metals. The electron-emitting source, the display element constituted so that a desired part of a light emitter may emit the light, the carbonaceous material for the cathode of the battery, and the lithium ion secondary battery are obtained by utilizing the material.

6. 发明专利

JP2001064775A CARBON NANOTUBE THIN FILM FORMING DEVICE AND FORMING METHOD 失效
公开(公告)号：JP2001064775A
公开(公告)日：2001-03-13
申请号：JP24208699
申请日：1999-08-27
申请人： ULVAC CORP
发明人： AGAWA YOSHIAKI , YAMAKAWA HIROYUKI , MURAKAMI HIROHIKO , HIRAKAWA MASAAKI , TANAKA CHIAKI , YAMAMOTO YOSHIHIRO
IPC分类号： C01B31/02 , C23C16/26 , H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a product produced on a substrate oriented in a vertical direction by feeding oscillating output of microwaves composed so as to be made into the output in a timely modulated form into plasma of carbon-contg. gas. SOLUTION: In a state in which gaseous methane is made to flow into a film forming chamber 21, a microwave power source 32 is made on, by a microwave oscillator 33, half wave rectification type microwaves are outputted by a maximum peak value and about 1,000 kW at the frequency ≈2.45 GHz and are introduced into the film forming chamber 21 via a waveguide 35 for cavities to generate plasma of methane. In this state, d.c. voltage is applied on a substrate holder 22 by about -30 V from a bias power source 36, and methane ions in the plasma are deposited on a substrate 37 to form a film. The output of the microwaves is modulated in such a manner that the time of the modulation is controlled to about 15 to 30 ms, for example, and film formation is executed for about 5 to 10 min. In this way, only a carbon nanotube orientated in the vertical direction to the substrate is formed and film-formed.

7. 发明专利

JP2000223491A CU FILM FORMING METHOD 失效
公开(公告)号：JP2000223491A
公开(公告)日：2000-08-11
申请号：JP2201799
申请日：1999-01-29
申请人： ULVAC CORP
发明人： HIRAKAWA MASAAKI , MURAKAMI HIROHIKO , YAMAKAWA HIROYUKI
IPC分类号： H01L21/3205 , C23C24/00 , C23F13/00 , C23F13/14 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for facilitating the CMP(chemical mechanical polishing) processing in damascene process. SOLUTION: Cu-dispersed liquid where Cu fine particles are dispersed in an organic solvent is applied on a semiconductor substrate, which has irregularity being left behind after having filled up a recess such as a wiring groove, a via hole, a contact hole, etc., with Cu by sputtering method, plating method, CVD method, etc., and then the substrate where the applied film 3 is made is baked to evaporate and burn the organic matter within the applied film, and next, CuO produced by baking is reduced to form a Cu film as a sacrificed layer 4. Hereby, the surface of the substrate can be flattened, and the CMP processing is facilitated.

8. 发明专利

JP2000124157A FORMATION OF Cu THIN FILM 失效
公开(公告)号：JP2000124157A
公开(公告)日：2000-04-28
申请号：JP22646399
申请日：1999-08-10
申请人： VACUUM METALLURG CO LTD , ULVAC CORP
发明人： ODA MASAAKI , IMAZEKI NOBUYA , YAMAKAWA HIROYUKI , MURAKAMI HIROHIKO
IPC分类号： H01L21/3205 , C23C24/08 , H01L21/288 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To develop a method, which embeds a Cu metal thin film in a semiconductor substrate having a wiring groove of a high aspect ratio and recesses, such as via holes and contact holes, without generating voids in the recesses and can form the Cu metal thin film in the recesses at low cost. SOLUTION: Although a Cu ultrafine grain independent dispersion is applied on a semiconductor substrate, having a wiring groove of an aspect ratio of 1 to 30 and recesses, such as via holes and contact holes, and an organic matter in the dispersion is decomposed, the Cu in the dispersion is baked in an atmosphere but is not oxidized to obtain a Cu metal thin film on the substrate. Then, a Cu metal thin film, on a substrate other than the Cu metal thin film in the recesses is removed to flatten the surface of the substrate and the Cu metal thin film, is formed in the recesses. It is preferable that the baking of the Cu be performed at a temperature of 150 to 500 deg.C in the presence of H2O and a CO2 in an inert gas atmosphere.

9. 发明专利

JP2000057934A CARBON-BASED SUPER FINE COLD-CATHODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000057934A
公开(公告)日：2000-02-25
申请号：JP30125998
申请日：1998-10-22
申请人： ULVAC CORP
发明人： IMADA SAKI , HIRAKAWA MASAAKI , MURAKAMI HIROHIKO , YAMAKAWA HIROYUKI
IPC分类号： H01J9/02 , C01B31/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To provide a super fine and high density electron emitting source with a very simple structure by directly depositing the predetermined carbon- based material on the surface of a board at the predetermined position with a plasma CVD method or, desirably, an electric field applying type plasma CVD method. SOLUTION: Depositing condition of the reaction gas and the applying voltage is appropriately selected, and a carbon nano tube or an amorphous carbon is deposited by an electric field applying plasma CVD method at the predetermined position of a board made of silicon or the like having a small coefficient of diffusion of carbon while previously including Ni, Fe, Co or the alloy thereof or adhering them to the surface, and thereafter, high electric field treatment is performed in the vacuum for aging. At this stage, a desirable characteristic can be obtained by controlling the grain diameter of the fine grain of the assistant such as Ni as the catalyst and the diffusion density, and depositing time and diffusion density of the super fine grain assistant metal are appropriately set so as to control the diffusion density and size of a cold-cathode, and the depositing time at this stage is set at 10-20 minutes.

10. 发明专利

JPH11265653A ELECTRODE, AND DISPLAY DEVICE HAVING THE ELECTRODE 失效
公开(公告)号：JPH11265653A
公开(公告)日：1999-09-28
申请号：JP8936498
申请日：1998-03-18
申请人： ULVAC CORP
发明人： MURAKAMI HIROHIKO , YAMAKAWA HIROYUKI
IPC分类号： H01J9/02 , C23C14/18 , C23C14/34 , C23C20/06 , C23C24/08 , H01J1/30 , H01J1/304 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide an electrode capable of emitting electrons in a low electric field and easy to manufacture. SOLUTION: A metal carbide is adhered to the surface of a heat resisting wiring film 13 and heated under vacuum to form a porous carbon film as an electrode 14. When the temperature causing either one of decomposition, melting or sublimation to the upper limit in the vacuum heating of the metal carbide, the metal carbide is decomposed in the vacuum atmosphere to provide the porous carbon film although it is not decomposed under atmospheric pressure. Since the porous carbon film contains carbon tubes or carbon whiskers and can emit electrons in a low electric field, an FED 2 drivable at low voltage can be provided.

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