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1. 发明专利

JPH0417920B2 失效
公开(公告)号：JPH0417920B2
公开(公告)日：1992-03-26
申请号：JP3656385
申请日：1985-02-27
申请人： ULVAC CORP
发明人： KOMATSU KYOSHI , KOMAGATA KAZUYUKI , KOMYA MUNEHARU
IPC分类号： C30B31/22 , C30B31/14 , H01L21/265

2. 发明专利

JPS61197500A COOLER FOR SUBSTRATE 失效
公开(公告)号：JPS61197500A
公开(公告)日：1986-09-01
申请号：JP3656385
申请日：1985-02-27
申请人： ULVAC CORP
发明人： KOMATSU KIYOSHI , KOMAGATA KAZUYUKI , KOMIYA MUNEHARU
IPC分类号： C30B31/22 , C30B31/14 , H01L21/265
摘要： PURPOSE:When an ion is injected into the surface of a substrate such as a silicon wafer in a vacuum chamber, to cool the substrate effectively and to prevent damage by heat, by bringing the substrate into contact with a cooling plate having a great number of protrusions. CONSTITUTION:When the substrate such as a silicon wafer, etc. is placed on the vacuum chamber 2 and an ion is injected into it, the substrate 5 is damaged by rise in temperature accompanied by heat introduction of the ion injection. In order to prevent it, the substrate 5 is pushed against the surface 4 of the cooling plate 4 such as Cu, etc., having a lens-like surface and good heat conduction by the clamp 6. The cooling plate 4 is placed on the holder 2 made of Cu or Al equipped with the circulation path 3 of a refrigerant such as cooling water, etc. When the substrate 5 is heated by the heat introduction of the ion injection, the bottom of the substrate is curved and attached to the top of the cooling plate 4, the numerous protrusions 7 on the top of the cooling plate 4 come into the dents on the bottom of the substrate 5, the protrusions on the bottom of the substrate come into the dents between the protrusions on the surface of the cooling plate 4a, the contact area of is increased, the cooling effect is improved and damage by rise in temperature of the substrate 5 is prevented.

3. 发明专利

JPS60141699A ION SOURCE DEVICE FOR DOPING 失效
公开(公告)号：JPS60141699A
公开(公告)日：1985-07-26
申请号：JP24491983
申请日：1983-12-27
申请人： ULVAC CORP
发明人： KOMAGATA KAZUYUKI
IPC分类号： C30B23/08 , C30B31/22 , H01L21/203
摘要： PURPOSE:To carry out high-concn. doping at low temps. by providing a combination of a lens for controlling the electric current and diameter of an ion beam, a mass separator for selecting ions, and a deflector to a titled ion source. CONSTITUTION:When an ion source 2 is electrically heated and a high voltage is impressed on a drawing electrode, an ion beam 6 of a eutectic metal is taken out. The electric current and diameter of the ion beam is controlled by an electrostatic lens 5, and only the desired ion is separated by a mass separator 5. The ion is further hit against a substrate 9 by a deflector 8 so that the ion may scan on the substrate 9. Accordingly, a high-purity dopant ion consisting only of the desired ion can be obtained, and the hundred-percent ionized particle can be doped in high concn. into a thin film growing on the substrate 9 by molecular beam epitaxial devices 10 and 11. In addition, the doping can be carried out without generating any segregation layers.

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