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1. 发明专利

JP2006310380A Solid laminated capacitor 有权
标题翻译：固体层压电容器
公开(公告)号：JP2006310380A
公开(公告)日：2006-11-09
申请号：JP2005128078
申请日：2005-04-26
申请人： Toyota Central Res & Dev Lab Inc , Univ Nagoya , 国立大学法人名古屋大学 , 株式会社豊田中央研究所
发明人： YAMADA NOBORU , FUKUSHIMA YOSHIAKI , KAJINO TSUTOMU , YUI TATSUHITO , TAKAGI KATSUHIKO
IPC分类号： H01G4/018 , B82Y20/00 , B82Y99/00 , H01G4/00 , H01G4/33 , H01G9/025 , H01G9/20 , H01G9/26 , H01G11/00 , H01G11/22 , H01G11/30 , H01G11/56 , H01G11/86 , H01L51/42
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a solid laminated capacitor which has no trouble such as liquid leakage or the like and can be charged by light irradiation even while it is not connected with a positive electrode and a negative electrode, and wherein a distance between electrodes can be reduced and charge retention can be also keep for a long time. SOLUTION: The solid laminated capacitor is provided with a silica-based meso porous thin film, a sensitized dye molecule supported by the silica-based meso porous thin film, a titania nano-sheet which is stacked on at least one surface of the silica-based meso porous thin film, and an electron acceptor held by the titania nano-sheet layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种没有漏液等问题的固体层压电容器，即使在没有与正极和负极连接的情况下也可以通过光照射进行充电，并且其中电极之间的距离可以减小，电荷保留也可以长时间保持。固体层压电容器设置有二氧化硅基介孔多孔薄膜，由二氧化硅基介孔多孔薄膜负载的敏化染料分子，二氧化钛纳米片层叠在至少一个表面上二氧化硅基介孔多孔薄膜和由二氧化钛纳米片层保持的电子受体。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004244653A Water electrolysis system 审中-公开
公开(公告)号：JP2004244653A
公开(公告)日：2004-09-02
申请号：JP2003033078
申请日：2003-02-12
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： FUKUSHIMA HIDEOKI , YAMADA NOBORU , SUZUKI YASUHIKO
IPC分类号： C25B9/04 , C25B1/04 , C25B15/02
CPC分类号： Y02E60/366 , Y02E70/10
摘要： PROBLEM TO BE SOLVED: To provide a water electrolysis system which keeps efficiency of the whole system optimum, by grasping an optimal operating point of an input source to the water electrolysis cell, or equivalently, a maximum output.
SOLUTION: This water electrolysis system has a DC-DC converter capable of converting a high power, installed between a solar battery having high-voltage and low-current characteristics and an electrolysis cell having low-voltage and high-current characteristics. The whole system is connected with a control circuit. The control circuit has a means for detecting the optimal operating point of the solar battery, or equivalently, the maximum power Pm; a means for detecting the input power Pin of the converter; a means for detecting the output power of the converter, or equivalently, the power Pout applied to the electrolysis cell, and a means which can output the output voltage Vout of the DC-DC converter so that the efficiency η of the whole system can be maximized.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2012151346A Method for manufacturing mim tunnel diode 有权
标题翻译：制造MIM隧道二极管的方法
公开(公告)号：JP2012151346A
公开(公告)日：2012-08-09
申请号：JP2011009850
申请日：2011-01-20
申请人： Toyoda Gosei Co Ltd , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： ITO TADASHI , YAMADA NOBORU , UENO YUKIHISA
IPC分类号： H01L29/88 , H01L21/329
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an MIM tunnel diode in which an extremely thin and uniform insulation layer can be formed on a first metal layer easily by plasma oxidation.SOLUTION: A method for manufacturing an MIM tunnel diode in which a first metal layer 14 composed of nickel, an insulation layer 16 composed of nickel oxide having a thickness of 1 to 10 nm, and a second metal layer 18 are laminated in this order on an insulating substrate 12 includes an insulation layer forming step for forming an insulation layer by oxidizing the first metal layer by plasma oxidation method. When the first metal layer is oxidized by plasma oxidation method in the insulation layer forming step, a parallel-plate plasma generating device is used, and the oxygen pressure p(Pa), the self-bias voltage V(V) and the processing time t(min) of the parallel-plate plasma generating device are set to satisfy the following conditions; 6.8≤p≤12.0, 290≤V≤400, 3≤t≤6.
摘要翻译：要解决的问题：提供一种MIM隧道二极管的制造方法，其中可以通过等离子体氧化容易地在第一金属层上形成极薄且均匀的绝缘层。解决方案：一种制造MIM隧道二极管的方法，其中将由镍组成的第一金属层14，由氧化镍构成的绝缘层16和第二金属层18层压在绝缘基板12上的顺序包括通过用等离子体氧化法氧化第一金属层来形成绝缘层的绝缘层形成步骤。当在绝缘层形成工序中第一金属层被等离子体氧化法氧化时，使用平行平板等离子体生成装置，氧压p（Pa），自偏压V DC ≤400,3≤t≤6。版权所有（C）2012，JPO＆INPIT

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