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    • 5. 发明专利
    • SILICON NITRIDE-BASED SINTERED COMPACT
    • JPH061662A
    • 1994-01-11
    • JP18432092
    • 1992-06-17
    • TOYOTA CENTRAL RES & DEV
    • UKIYOU YOSHIOWADA SHIGETAKAKAMITORI TOSHIO
    • C04B35/584C04B35/58C04B35/626
    • PURPOSE:To obtain a silicon nitride-based sintered compact excellent in strength even at a high temp. of >=1,300 deg.C by specifying the amt. of oxygen in a sintered compact. formed by dispersing silicon carbide in a silicon nitride sintered compact. CONSTITUTION:When a silicon nitride-based sintered compact is composed of a silicon nitride sintered compact and silicon carbide grains dispersed in this sintered compact, value given by subtracting the amt. of oxygen capable of reacting with the metallic element of a sintering aid in the silicon nitride- based sintered compact from the total amt. of oxygen in the sintered compact is regulated to 0.5-6.9wt.% of the amt. of the entire sintered compact. By this regulation, the amt. of a glass phase forming grain boundaries is reduced and the amt. of silicon carbide grains incorporated into the glass phase is reduced. As a result, the area of contact, of the silicon nitride grains with the silicon carbide grains is increased, the silicon carbide grains easily prevent the lowering of the strength of the sintered compact due to the slippage of the silicon nitride grains at high temp. and the strength of the sintered compact at high temp. is enhanced.
    • 9. 发明专利
    • Manufacture of silicon nitride
    • 硅酸盐的制造
    • JPS59203714A
    • 1984-11-17
    • JP7795383
    • 1983-05-02
    • Toyota Central Res & Dev Lab Inc
    • KAMITORI TOSHIODOI HARUOSUGIURA MASAHIRO
    • C01B21/068
    • C01B21/0685
    • PURPOSE: To manufacture inexpensively high quality silicon nitride consisting of fine particles and having superior characteristics at high temp. by bringing a mixture consisting of SiO
      2 , C powder and specified additives into a reaction by heating to a high temp. in an atmosphere contg. nitrogen.
      CONSTITUTION: To 1pt.wt. of SiO
      2 are added 0.4W2pts. C powder such as carbon black and 0.0001W0.03pt. of one or more kinds of compounds selected among oxides such as LiOH, GeO
      2 , Y
      2 O
      3 , ZrO
      2 , Nb
      2 O
      5 , La
      2 O
      3 , CeO
      2 and Ta
      2 O
      5 , nitri des such as AlN and ZrN, and composite oxides such as Y
      3 Al
      5 O
      12 as additives. They are mixed, and the mixture is heated to 1,350W1,500°C in a gaseous nitrogen atmosphere or an atmosphere of a mixture of gaseous nitrogen with ≤30vol% gaseous hydrogen. High quality Si
      3 N
      4 consisting of fine particles and having superior mechanical properties, thermal shock resistance and chemical stability at high temp. can be inexpensively manufactured in a high yield.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:制造廉价高品质的氮化硅,由微细颗粒组成,在高温下具有优异的特性。 通过将由SiO 2,C粉末和特定添加剂组成的混合物加热至高温进行反应。 在气氛中 氮。 规定:1pt.wt 的SiO2添加0.4-2pts。 C粉末如炭黑和0.0001-0.03pt。 选自LiOH,GeO 2,Y 2 O 3,ZrO 2,Nb 2 O 5,La 2 O 3,CeO 2和Ta 2 O 5等氧化物,AlN,ZrN等氮化物,Y 3 Al 5 O 12等复合氧化物作为添加剂的一种或多种化合物。 将它们混合,并将混合物在气态氮气气氛中或气态氮与<= 30体积%气态氢气的混合物的气氛中加热至1350-1,500℃。 高品质的Si3N4由细颗粒组成,具有优异的机械性能,耐热冲击性和高温下的化学稳定性。 可以以高产率廉价地制造。