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1. 发明专利

JP2014078683A Group iii nitride-based compound semiconductor light-emitting element, manufacturing method of the same and semiconductor light-emitting device 有权
标题翻译：基于III族氮化物的化合物半导体发光元件，其制造方法和半导体发光器件
公开(公告)号：JP2014078683A
公开(公告)日：2014-05-01
申请号：JP2013117784
申请日：2013-06-04
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KAMIYA MASAHISA , GOSHONOO KOICHI , TOYA SHINGO , KAWAI TAKASHI , MORI TAKAHIRO , HIRATA KOJI
IPC分类号： H01L33/22 , H01L33/32 , H01L33/52
CPC分类号： H01L33/32 , H01L21/0237 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride-based compound semiconductor light-emitting element, a manufacturing method of the same and a semiconductor light-emitting device, which achieve improved light-extraction efficiency of light extracted from an axial direction.SOLUTION: A light-emitting element 100 comprises: an irregular shape part 111 formed on a principal surface of a substrate 110; and a first region R1 and a second region R2 and a third region R3, in which a gap C is formed in the first region R1 and the third region R3 and between the substrate 110 and a semiconductor layer 120, and voids are formed in the second region R2. A part of the semiconductor layer 120 and a part of the gap C are arranged inside a recess in a cross section which passes adjacent apexes T1 of the irregular shape part 111 and a bottom B1 lying between the adjacent apexes.
摘要翻译：要解决的问题：提供一种III族氮化物系化合物半导体发光元件，其制造方法和半导体发光器件，其实现从轴向提取的光的提取效率的提高。发光元件100包括：形成在基板110的主表面上的不规则形状部111; 并且在第一区域R1和第三区域R3以及衬底110和半导体层120之间形成有间隙C的第一区域R1和第二区域R2以及第三区域R3，并且在第二区域R2。半导体层120的一部分和间隙C的一部分布置在通过相邻的不规则形状部分111的顶点T1和位于相邻顶点之间的底部B1的横截面中的凹部内。

2. 发明专利

JP2010087264A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2010087264A
公开(公告)日：2010-04-15
申请号：JP2008255007
申请日：2008-09-30
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： GOSHONOO KOICHI , MORIYAMA MIKI
IPC分类号： H01L33/32 , H01L33/48
CPC分类号： H01L2224/16225 , H01L2224/16227
摘要： PROBLEM TO BE SOLVED: To simplify a manufacturing process in a semiconductor device manufacturing method for mounting a semiconductor element, having each electrode on both sides, on a circuit board while laying the semiconductor element on its side. SOLUTION: A semiconductor element includes a p-side electrode and a first metal layer with a thickness of 3-20 μm, formed on the p-side electrode, respectively on one side of a conductive substrate while having an n-side electrode and a second metal layer with a thickness of 3-20 μm, formed on the n-side electrode, respectively on the other side of the conductive substrate. A semiconductor device manufacturing method includes: a step of preparing the semiconductor element; a step of placing the semiconductor element on a mounting substrate, formed with a prescribed pattern having a first pad and a second pad, such that the first metal layer is located on the first pad and the second metal layer is located on the second pad; and a step of solid-phase bonding the first metal layer of the semiconductor element, placed on the mounting substrate, and the first pad so as to solid-phase bond the second metal layer and the second pad. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了简化在将半导体元件放置在其侧面上的用于安装半导体元件的半导体元件的制造方法中的制造方法，该半导体元件的制造方法具有两侧的每个电极，在电路板上。解决方案：半导体元件包括p侧电极和厚度为3-20μm的第一金属层，分别形成在p侧电极的导电基板的一侧上，同时具有n侧电极和厚度为3-20μm的第二金属层，分别形成在导电基板的另一侧的n侧电极上。半导体器件制造方法包括：准备半导体元件的步骤; 将所述半导体元件放置在由具有第一焊盘和第二焊盘的规定图案形成的安装基板上，使得所述第一金属层位于所述第一焊盘上，并且所述第二金属层位于所述第二焊盘上的步骤; 以及将放置在安装基板上的半导体元件的第一金属层和第一焊盘固相接合以使第二金属层和第二焊盘固相接合的步骤。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010087218A Group-iii nitride semiconductor light-emitting element, and method of manufacturing the same 审中-公开
标题翻译： III族氮化物半导体发光元件及其制造方法
公开(公告)号：JP2010087218A
公开(公告)日：2010-04-15
申请号：JP2008254287
申请日：2008-09-30
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： MORIYAMA MIKI , GOSHONOO KOICHI
IPC分类号： H01L33/32 , H01L21/306
CPC分类号： H01L33/0079 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor light-emitting element including a GaN substrate serving as a growth substrate, in which the GaN substrate is processed to have a membrane structure with high reproducibility. SOLUTION: A stopper layer 11 of AlGaN having an Al compositional proportion of 20% is formed on a top surface of the GaN substrate 10. An n-type layer 12, an active layer 13, a p-type layer 14 and a p-electrode 15 are formed on the stopper layer 11, and the p-electrode is joined to a support substrate 16. Subsequently, a mask 20 having a center-opening pattern is formed, and a bottom surface of the GaN substrate 10 is subjected to PEC (photo enhanced chemical reaction) etching. Light to be irradiated has a wavelength corresponding to energy higher than a band gap of GaN, but lower than a band gap of AlGaN having the Al composition proportion of 20%. Since etching stops when it proceeds to a depth reaching the stopper layer 11, the membrane structure can be formed with high reproducibility. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种III族氮化物半导体发光元件，其包括用作生长衬底的GaN衬底，其中GaN衬底被加工成具有高重现性的膜结构。解决方案：在GaN衬底10的顶表面上形成Al组分比例为20％的AlGaN的阻挡层11.N型层12，有源层13，p型层14和在停止层11上形成p电极15，将p电极接合到支撑基板16.随后，形成具有中心开口图案的掩模20，并且GaN基板10的底面为进行PEC（光增强化学反应）蚀刻。被照射的光具有对应于高于GaN的带隙的能量的波长，但低于Al组成比例为20％的AlGaN的带隙。由于当进入到达阻挡层11的深度时蚀刻停止，因此可以以高再现性形成膜结构。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008041807A White light source 审中-公开
标题翻译：白光源
公开(公告)号：JP2008041807A
公开(公告)日：2008-02-21
申请号：JP2006211898
申请日：2006-08-03
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： GOSHONOO KOICHI , MORIYAMA JITSUKI , YAMAZAKI DAISUKE
IPC分类号： H01L33/06 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a white light source ensuring excellent color balance of the three primary colors and higher light emitting coefficient.
SOLUTION: A multi-color light emitting element for emitting at least green and blue lights is sealed with a transparent sealing member, a fluorescent material is scattered into the sealing member, and the fluorescent material emits the red fluorescence using the light from the multi-color light emitting element as the excitation light.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供确保三原色的优异色平衡和更高发光系数的白光源。解决方案：用于发射至少绿色和蓝色光的多色发光元件用透明密封件密封，荧光材料被散射到密封构件中，并且荧光材料使用来自多色发光元件作为激发光。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2006173534A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2006173534A
公开(公告)日：2006-06-29
申请号：JP2004367735
申请日：2004-12-20
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： KOJIMA MASAKI , HIROSE MINORU , KAMIYA MASAHISA , GOSHONOO KOICHI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/60 , H01L33/62
CPC分类号： H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device that can efficiently take out the light to the side face of a flip-mounted semiconductor light emitting element.
SOLUTION: The light emitting device is provided with the semiconductor light emitting element in which a p-layer and an n-layer are laminated upon another, and a p-electrode electrically connected to the p-layer and an n-electrode electrically connected to the n-layer are formed on the same surface. The semiconductor light emitting element is flip-mounted on a mounting member having circuits respectively electrically connected to the p- and n-electrodes. The semiconductor light emitting element has a slope from the p-layer to the n-layer, and the surface of the slope is constituted in a recessed and projecting structure.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以有效地将光取出到翻盖式半导体发光元件的侧面的发光器件。解决方案：发光器件设置有将p层和n层层压在其上的半导体发光元件，以及与p层电连接的p电极和n电极与n层电连接形成在同一表面上。半导体发光元件被翻转安装在具有电连接到p电极和n电极的电路的安装构件上。半导体发光元件具有从p层到n层的斜率，并且斜面的表面以凹入和突出的结构构成。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005093728A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2005093728A
公开(公告)日：2005-04-07
申请号：JP2003325120
申请日：2003-09-17
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： SENDA MASANOBU , ITO JUN , GOSHONOO KOICHI
IPC分类号： H01L33/22 , H01L33/32 , H01L33/60 , H01L33/62 , H01L35/24 , H01L51/00 , H01L33/00
CPC分类号： H01L33/22 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0091 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device with high take-out efficiency of light in a light-emitting device, wherein a light is emitted from a light-emitting element, such as a light-emitting diode (LED) or the like. SOLUTION: An air bubble support body 52 with a large difference of refractive index between an air bubble 521 and its peripheral members is provided on a light extraction surface 50a of a sapphire 50. The air bubble support body 52 is translucent against emission wavelength and is made of silicon or the like with a refractive index of 1.77 or larger. The body is provided with an air bubble support layer that supports a plurality of air bubbles formed of air with a refractive index of about one, and a gas such as an inert gas. Thus, when a light, emitted from a light emission part, is scattered in the air bubble supporting body 52, the scattered light expands and prevents repeated complete reflection in the light-emitting device, thereby improving the light extraction efficiency. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供一种在发光器件中具有高的光的取出效率的发光器件，其中从诸如发光二极管的发光元件（例如， LED）等。解决方案：在蓝宝石50的光提取表面50a上设置气泡521与其周边部件之间具有大的折射率差异的气泡支撑体52.气泡支撑体52对于发射是半透明的并且由折射率为1.77以上的硅等制成。主体设置有气泡支撑层，该气泡支撑层支撑由折射率约为1的空气形成的多个气泡，以及诸如惰性气体的气体。因此，当从发光部射出的光被散布在气泡支撑体52中时，散射光膨胀并防止发光装置中的反复完全反射，从而提高光提取效率。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2013229393A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2013229393A
公开(公告)日：2013-11-07
申请号：JP2012099046
申请日：2012-04-24
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： WADA SATOSHI , GOSHONOO KOICHI , SAITO YOSHIKI
IPC分类号： H01L33/60 , H01L33/16 , H01L33/20 , H01L33/32
CPC分类号： H01L33/20 , H01L24/32 , H01L33/56 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device capable of keeping high light extraction efficiency even if the device is made small or thin.SOLUTION: A light emitting device according to one embodiment of the present invention has: a case 1 having a substrate 2 and a side wall 3 on the substrate 2; a light emitting element 11 mounted in a region surrounded by the side wall 3 of the substrate 2, having a substrate 111 and a crystal layer 112 including a light emitting layer, and having a rectangular plane shape when seen from a direction vertical to the substrate 2; and a low refractive index layer 4 positioned between the light emitting element 11 and the side wall 3 and having a refractive index lower than that of the substrate 111. A longitudinal side face 111a of the substrate 111 has a tapered section on the substrate 2 side.
摘要翻译：本发明的一个实施方式的发光装置具有：具有基板的壳体1，其特征在于，所述发光元件具有基板 2和基板2上的侧壁3; 安装在由基板2的侧壁3包围的区域中的发光元件11，具有基板111和包括发光层的晶体层112，并且从垂直于基板的方向观察时具有矩形平面形状 2; 以及位于发光元件11和侧壁3之间并且具有比基板111的折射率低的折射率的低折射率层4.基板111的纵向侧面111a在基板2侧具有锥形部。

8. 发明专利

JP2013062346A Group-iii nitride semiconductor light-emitting element 有权
标题翻译：第III族氮化物半导体发光元件
公开(公告)号：JP2013062346A
公开(公告)日：2013-04-04
申请号：JP2011199259
申请日：2011-09-13
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： GOSHONOO KOICHI , MORIYAMA MIKI
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor light-emitting element having a wide light emission spectrum width and a high light-emitting efficiency.SOLUTION: A group-III nitride semiconductor light-emitting element has a sapphire substrate 10. An n-contact layer 11, a hole block layer 12, a light-emitting layer 13, a p-clad layer 14, and a p-contact layer 15 are sequentially stacked on the sapphire substrate 10. The hole block layer 12 is made of n-AlGaN with a thickness of 100 Å. The light-emitting layer 13 has an MQW structure in which a pair of a well layer 130 made of InGaN and a barrier layer 131 made of GaN are laminated four times repeatedly. The well layers 130 are sequentially defined as well layers 130-1, 130-2, 130-3 and 130-4 from a side closer to the n-contact layer 11. When an In composition ratio in the well layers 130-i (1≤i≤4) is defined as xi (the unit is "%", hereinafter the same shall apply), the well layers 130-1 to 130-4 are configured to satisfy a relation of x1>x2>x3>x4.
摘要翻译：解决的问题：提供具有宽的发光光谱宽度和高的发光效率的III族氮化物半导体发光元件。解决方案：III族氮化物半导体发光元件具有蓝宝石衬底10.n接触层11，空穴阻挡层12，发光层13，p覆盖层14和 p-接触层15依次层叠在蓝宝石衬底10上。空穴阻挡层12由厚度为的n-AlGaN制成。发光层13具有MQW结构，其中由InGaN制成的一对阱层130和由GaN制成的阻挡层131重复层叠四次。阱层130从更接近n接触层11的一侧依次定义为层130-1,130-2,130-3和130-4。当阱层130-i（ 1≤i≤4）定义为xi（单位为“％”，以下同样适用），阱层130-1〜130-4被配置为满足x1> x2> x3> x4的关系。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012178477A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2012178477A
公开(公告)日：2012-09-13
申请号：JP2011040996
申请日：2011-02-26
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： GOSHONOO KOICHI , MORIYAMA MIKI
IPC分类号： H01L33/04
摘要： PROBLEM TO BE SOLVED: To improve the wavelength separation of a semiconductor light-emitting device that can change emission wavelength by directions of a bias.SOLUTION: A semiconductor light-emitting device has a sapphire substrate 10. The sapphire substrate 10 includes an n-GaN layer 11, an n-GaN layer 12, a p-GaN layer 13, a first light-emitting layer 14, a second light-emitting layer 15, a p-GaN layer 16, an n-GaN layer 17, and an n-GaN layer 18 sequentially stacked. A first electrode 19 is formed on the n-GaN layer 18. A trench reaching the n-GaN layer 11 is formed in a region on a surface of the n-GaN layer 18, and a second electrode 20 is formed on the n-GaN layer 11 exposed by the trench. A wavelength separation layer 21 having a larger band gap than the first light-emitting layer 14 and the second light-emitting layer 15 is provided between the first light-emitting layer 14 and the second light-emitting layer 15.
摘要翻译：要解决的问题：为了改善可以通过偏压方向改变发射波长的半导体发光器件的波长分离。解决方案：半导体发光器件具有蓝宝石衬底10.蓝宝石衬底10包括n-GaN层11，n-GaN层11，p + SP＃=＆lt; / SP＆gt; -GaN层13，第一发光层14，第二发光层15，层16，顺序堆叠的n + / SP> -GaN层17和n-GaN层18。第一电极19形成在n-GaN层18上。在n-GaN层18的表面上的区域中形成到达n-GaN层11的沟槽，第二电极20形成在n-GaN层18的表面上。 GaN层11被沟槽暴露。在第一发光层14和第二发光层15之间设置具有比第一发光层14和第二发光层15大的带隙的波长分离层21.权利要求：（C）2012，JPO＆INPIT

10. 发明专利

JP2011155080A Exposure device and exposure method 审中-公开
标题翻译：曝光装置和曝光方法
公开(公告)号：JP2011155080A
公开(公告)日：2011-08-11
申请号：JP2010014695
申请日：2010-01-26
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： GOSHONOO KOICHI , MORIYAMA MIKI
IPC分类号： H01L21/027 , G03F1/00 , G03F1/68 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide an exposure device and an exposure method, capable of increasing the allowed dimensional errors of a diffraction grating, without the use of an intermediate layer.
SOLUTION: In an exposure method, a laser beam is input vertically to an incident face 3a of a diffraction grating 3 that has a planar support 31 and a diffraction section 32, where a part 32b having a refractive index different from that of the support 31 and having a rectangular cross section is formed with the support 31, in an alternate and periodic manner. Exposure is carried out on an object, while the height of the part 32b, having a rectangular cross section in the diffraction part 32, is set so that the intensity of the 0th-order and ±second-order or higher diffraction beams of the diffraction grating 3 are 11% or less of the intensity of the ±first-order diffraction beam.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在不使用中间层的情况下增加衍射光栅的允许的尺寸误差的曝光装置和曝光方法。解决方案：在曝光方法中，激光束垂直地输入到具有平面支撑31和衍射部分32的衍射光栅3的入射面3a，其中折射率不同于具有矩形横截面的支撑件31以支撑件31以交替和周期的方式形成。在物体上进行曝光，而在衍射部分32中具有矩形横截面的部分32b的高度被设定为使得衍射的0次和±2阶以上的衍射光束的强度光栅3是±一级衍射光束的强度的11％以下。版权所有（C）2011，JPO＆INPIT

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