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JP2012190913A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012190913A
公开(公告)日：2012-10-04
申请号：JP2011051671
申请日：2011-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGISAKI EMIKO , KAWANAKA SHIGERU , ADACHI KANNA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/66 , H01L29/786
CPC分类号： H01L29/7391 , H01L29/0657 , H01L29/42312
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can surely perform an ON/OFF control in a vertical P-N junction.SOLUTION: A semiconductor device comprises: a semiconductor layer; a gate insulating film provided on the semiconductor layer; and a gate electrode provided on the gate insulating film. A first channel region of a first conductivity type is provided in a part of a surface of the semiconductor layer under the gate insulating film. A diffusion layer of a second conductivity type different from the first conductivity type is provided in the semiconductor layer below the first channel region, contacts the bottom of the first channel region in a substantially perpendicular to the surface of the semiconductor layer, and forms a P-N junction with the bottom of the first channel region. A drain of the first conductivity type and a source of the second conductivity type are each provided at both sides of the first channel region in the semiconductor layer. A sidewall insulating film coats the side surface of the first channel region at the diffusion layer side.
摘要翻译：要解决的问题：提供一种能够确定地在垂直P-N结中进行ON / OFF控制的半导体器件。解决方案：半导体器件包括：半导体层; 设置在半导体层上的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。第一导电类型的第一沟道区域设置在栅极绝缘膜下面的半导体层的表面的一部分中。与第一导电类型不同的第二导电类型的扩散层设置在第一沟道区下面的半导体层中，与第一沟道区的底部基本上垂直于半导体层的表面接触，形成PN 与第一通道区域的底部连接。第一导电类型的漏极和第二导电类型的源极分别设置在半导体层中的第一沟道区的两侧。侧壁绝缘膜在扩散层侧涂覆第一沟道区域的侧表面。版权所有（C）2013，JPO＆INPIT

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