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    • 2. 发明专利
    • Contact substrate for test of semiconductor device
    • 用于半导体器件测试的接触衬底
    • JP2005017301A
    • 2005-01-20
    • JP2004209023
    • 2004-07-15
    • Toshiba Corp株式会社東芝
    • YAMAGUCHI NAOKOSUGIZAKI YOSHIAKIAOKI HIDEOHIRAOKA TOSHIROHOTTA YASUYUKIMATAKE SHIGERUSAWANOBORI MISA
    • G01R1/073G01R1/06H01L21/66
    • PROBLEM TO BE SOLVED: To provide a contact substrate for testing semiconductor device for conducting a test of an electronic component to be tested having fine electrode structure, while holding satisfactory electric contact.
      SOLUTION: This contact substrate for testing semiconductor device is provided with the contact substrate 5 formed of an gas-permeable insulating material comprising either of a crystalline polymer containing a PTFE (polytetrafluoroethylene) and an aramid or a polyimide, having an upper face and an under face, and having a conductive via for connecting a space the upper face between the under face in its inside, and a deformation restraining part 41 for restraining thermal expansion of the contact substrate 5 to bring a thermal expansion coefficient as the whole contact substrate 5 into ±6 ppm/K or less with respect to a thermal expansion coefficient of the electronic component to be tested 1 connected electrically to the contact substrate 5.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于测试半导体器件的接触衬底,用于进行具有精细电极结构的待测电子元件的测试,同时保持令人满意的电接触。 < P>解决方案:用于半导体器件测试的接触衬底设置有由透气绝缘材料形成的接触衬底5,该透气绝缘材料包括含有PTFE(聚四氟乙烯)和芳族聚酰胺或聚酰亚胺的结晶聚合物,其具有上表面 并且具有用于连接其内表面的上表面的空间的导电通孔和用于抑制接触基板5的热膨胀以使热膨胀系数作为整体接触的变形抑制部41 基板5相对于与接触基板5电连接的待测电子部件1的热膨胀系数为±6ppm / K以下。(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Multilayer wiring board and semiconductor device
    • 多层接线板和半导体器件
    • JP2006210622A
    • 2006-08-10
    • JP2005020313
    • 2005-01-27
    • Toshiba Corp株式会社東芝
    • YAMADA HIROSHIHOTTA YASUYUKIMATAKE SHIGERUSAWANOBORI MISAHIRAOKA TOSHIRO
    • H05K3/46
    • H01L2224/16225
    • PROBLEM TO BE SOLVED: To optimumly control a thermal expansion coefficient of an insulating layer of a semiconductor device where a semiconductor chip is mounted on a multilayer wiring board in which a circuit wiring layer and an insulating layer are alternately laminated on a core board. SOLUTION: The insulating layer is formed of porous materials 20 and 21 comprising holes 22 and 23 controlled in a constant direction. The circuit wiring layer is partially arranged in the porous material. In such region of the porous materials 20 and 21 where no circuit wiring is arranged, the insulating material of low thermal expansion coefficient is arranged. Thus, the multilayer wiring board and semiconductor device are easily realized in excellent flexibility and high connection reliability. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了最佳地控制半导体芯片的绝缘层的热膨胀系数,其中半导体芯片安装在电路布线层和绝缘层交替层叠在芯上的多层布线板上 板。 解决方案:绝缘层由多孔材料20和21形成,多孔材料20和21包括以恒定方向控制的孔22和23。 电路布线层部分地布置在多孔材料中。 在没有布置电路布线的多孔材料20和21的这种区域中,布置了低热膨胀系数的绝缘材料。 因此,多层布线基板和半导体装置易于实现,具有优异的灵活性和高的连接可靠性。 版权所有(C)2006,JPO&NCIPI
    • 6. 发明专利
    • Porous wiring board
    • 多孔接线板
    • JP2006100450A
    • 2006-04-13
    • JP2004282804
    • 2004-09-28
    • Toshiba Corp株式会社東芝
    • YAMADA HIROSHIHIRAOKA TOSHIROHOTTA YASUYUKISAWANOBORI MISAMATAKE SHIGERUSAITO SATOSHI
    • H05K1/02
    • PROBLEM TO BE SOLVED: To provide a multilayer wiring board capable of preventing shrinkage between wires to prevent a shift in designing position, improving connection reliability when making multiple layers, and obtaining sufficient conductivity. SOLUTION: The multilayer wiring board includes a sheetlike insulator (11) of a porous structure, an internal conductive part (12a) formed by filling pores of the sheetlike insulator with metal, and an external conductive part (12b) formed on the surface of the internal conductive part and connectable with the outside. A relation expressed by a formula (1) of 0.2≤(w 2 /w 1 )≤0.98 is observed between the maximum width (w 2 ) of the external conductive part parallel to a border surface of the sheetlike insulator and the maximum width (w 1 ) of the internal conductive part parallel to the border surface of the sheetlike insulator. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够防止电线之间收缩的多层布线板,以防止设计位置的偏移,提高制造多层时的连接可靠性,并获得足够的导电性。 解决方案:多层布线板包括多孔结构的片状绝缘体(11),通过用金属填充片状绝缘体的孔而形成的内部导电部分(12a)和形成在其上的外部导电部分(12b) 内部导电部分的表面并可与外部连接。 在最大宽度(w 2 2 / W 1 )≤0.98 >)和与片状绝缘体的边界表面平行的外部导电部分和与片状绝缘体的边界表面平行的内部导电部分的最大宽度(w 1 )。 版权所有(C)2006,JPO&NCIPI
    • 9. 发明专利
    • Contact substrate for semiconductor device test
    • 用于半导体器件测试的接触衬底
    • JP2007304110A
    • 2007-11-22
    • JP2007180289
    • 2007-07-09
    • Toshiba Corp株式会社東芝
    • YAMAGUCHI NAOKOSUGIZAKI YOSHIAKIAOKI HIDEOHIRAOKA TOSHIROHOTTA YASUYUKIMATAKE SHIGERUSAWANOBORI MISA
    • G01R1/073G01R31/26H01L21/66
    • PROBLEM TO BE SOLVED: To perform a test of an electronic component to be tested having a fine electrode structure while keeping satisfactory electric contact.
      SOLUTION: This contact substrate includes a contact substrate 5 formed of a gas-permeable insulating material comprising either of liquid crystal polymer containing polytetrafluoroethylene and aramid or polyimide with 70% to 80% aperture ratio of a vacant hole, having an upper face and an under face, and having a plurality of conductive viae penetrating between the upper face and the under face in its inside, and adsorbing the electronic component to be tested 1 by air pressure, and a deformation restraining part 41 for restraining thermal expansion of the contact substrate 5 due to the difference between the thermal expansion coefficient of the electronic component to be tested 1 and the thermal expansion coefficient of the whole contact substrate 5, while the deformation restraining part 41 is projected and arranged from a plane which contacts with the electronic component to be tested so that the periphery of the plurality of the conductive viae may be surrounded.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:在保持令人满意的电接触的同时对具有精细电极结构的待测电子部件进行试验。 该接触基板包括由透气绝缘材料形成的接触基板5,该导电绝缘材料包括含有聚四氟乙烯的液晶聚合物和芳族聚酰胺或具有70%至80%的空孔开口率的聚酰亚胺,其具有上表面 和底面,并且在其内部具有穿过上表面和下表面之间的多个导电通孔,并且通过气压吸附待测试的电子部件1;以及变形抑制部41,用于抑制 接触基板5由于待测电子部件1的热膨胀系数与整个接触基板5的热膨胀系数的差异,同时变形抑制部41从与电子部件接触的平面突出并配置 待测试的部件,使得多个导电通孔的周边可以被包围。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Method of manufacturing composite member and composite member forming material
    • 制备复合材料和复合材料成型材料的方法
    • JP2006196602A
    • 2006-07-27
    • JP2005005432
    • 2005-01-12
    • Toshiba Corp株式会社東芝
    • SAWANOBORI MISAHOTTA YASUYUKIMATAKE SHIGERUYAMADA HIROSHI
    • H05K3/18
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a composite member which is capable of stably forming a conductor layer micro pattern that is capable of preventing exposure light from scattering and hardly gets into a porous base material. SOLUTION: The method of manufacturing a composite member comprises a first process of forming a photosensitive layer inside the voids of the porous base material which is provided with continuous voids that are three-dimensionally formed, and filling the porous base material with a filler from either before or behind to form a composite member forming base material; a second process of subjecting the prescribed region of the composite member forming base material to pattern exposure from above the filling layer side; a third process of removing the filler; and a fourth process of selectively filling the exposed part or the unexposed part where the filler has been removed with a conductive material. The filler meets requirements represented by formula (1). In the formula (1), εA denotes the refractive index of the insulating material forming the porous base material, and εB is the refractive index of the filler. The refractive index of the air is one. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够稳定地形成能够防止曝光光散射并且难以进入多孔基材的导体层微图案的复合构件的制造方法。 解决方案:制造复合构件的方法包括在多孔基材的空隙内形成感光层的第一工艺,该多孔基材具有三维形成的连续空隙,并将多孔基材填充到 填料从之前或之后形成复合构件形成基材; 使形成基材的复合构件的规定区域从填充层侧上方进行图案曝光的第二工序; 第三种除去填料的方法; 以及选择性地填充已经用导电材料去除填料的暴露部分或未曝光部分的第四工序。 填料符合式(1)所示的要求。 在式(1)中,εA表示形成多孔基材的绝缘材料的折射率,εB是填料的折射率。 空气的折射率是一。 版权所有(C)2006,JPO&NCIPI