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1. 发明专利

JP2013065632A Semiconductor element, wafer, method of manufacturing semiconductor element, and method of manufacturing wafer 有权
标题翻译：半导体元件，波形，制造半导体元件的方法和制造方法
公开(公告)号：JP2013065632A
公开(公告)日：2013-04-11
申请号：JP2011202323
申请日：2011-09-15
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSHIBE MITSUHIRO , OBA YASUO , KATSUNO HIROSHI , KANEKO KATSURA , YAMADA SHINJI
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element having high efficiency, a wafer, a method of manufacturing the semiconductor element, and a method of manufacturing the wafer.SOLUTION: The semiconductor element includes an n-type first layer containing a nitride semiconductor, a p-type second layer containing the nitride semiconductor, a light-emitting part, and a first stack. The light-emitting part is provided between the first layer and the second layer. The light-emitting part includes a plurality of barrier layers and well layers provided between the plurality of barrier layers. The first stack is provided between the first layer and the light-emitting part. The first stack includes a plurality of third layers that contain AlGaInN, and a plurality of fourth layers that are alternately stacked with the plurality of third layers and contain GaInN. The first stack includes recesses provided in a surface of the first stack on the light-emitting part side. In at least parts of the recesses, a part of the light-emitting part and a part of the second layer are embedded. The part of the second layer is located on the part of the embedded light-emitting part.
摘要翻译：要解决的问题：提供一种具有高效率的半导体元件，晶片，半导体元件的制造方法以及晶片的制造方法。解决方案：半导体元件包括含有氮化物半导体的n型第一层，含有氮化物半导体的p型第二层，发光部和第一层。发光部分设置在第一层和第二层之间。发光部分包括设置在多个阻挡层之间的多个阻挡层和阱层。第一叠层设置在第一层和发光部之间。第一堆叠包括多个含有AlGaInN的第三层，以及与多个第三层交替堆叠并包含GaInN的多个第四层。第一堆叠包括设置在发光部分侧的第一堆叠的表面中的凹部。在凹部的至少一部分中，发光部分的一部分和第二层的一部分被嵌入。第二层的一部分位于嵌入式发光部的一部分。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012044194A Semiconductor light-emitting device, wafer, and method of manufacturing semiconductor light-emitting device and wafer 有权
标题翻译：半导体发光器件，滤波器及制造半导体发光器件及其制造方法
公开(公告)号：JP2012044194A
公开(公告)日：2012-03-01
申请号：JP2011202266
申请日：2011-09-15
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSHIBE MITSUHIRO , OBA YASUO , KANEKO KATSURA , KATSUNO HIROSHI , YAMADA SHINJI
IPC分类号： H01L33/06 , B82Y20/00 , B82Y30/00 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device and a wafer that are capable of efficiently emitting near-ultraviolet light, and to provide a method of manufacturing them.SOLUTION: A semiconductor light-emitting device comprises a first layer, a second layer, light-emitting portion, a first stacked structure, and a second stacked structure. The first layer includes at least any of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light-emitting portion is provided between the first layer and the second layer, and includes a barrier layer and a well layer. The first stacked structure is provided between the first layer and the light-emitting portion. The first stacked structure includes a plurality of third layers including AlGaInN and a plurality of fourth layers that are alternately stacked with the plurality of the third layers and include GaInN. The second stacked structure is provided between the first layer and the first stacked structure. The second stacked structure includes a plurality of fifth layers including GaN and a plurality of sixth layers that are alternately stacked with the plurality of fifth layers and include GaInN.
摘要翻译：要解决的问题：提供能够有效地发射近紫外光的半导体发光器件和晶片，并提供其制造方法。解决方案：半导体发光器件包括第一层，第二层，发光部分，第一堆叠结构和第二堆叠结构。第一层包括n型GaN和n型AlGaN中的至少任一种。第二层包括p型AlGaN。发光部分设置在第一层和第二层之间，并且包括阻挡层和阱层。第一层叠结构设置在第一层和发光部之间。第一堆叠结构包括多个第三层，包括AlGaInN和与多个第三层交替堆叠的多个第四层，并且包括GaInN。第二堆叠结构设置在第一层和第一堆叠结构之间。第二堆叠结构包括多个第五层，包括GaN和多个第六层，其与多个第五层交替堆叠并且包括GaInN。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010219269A Semiconductor element, semiconductor device, semiconductor wafer, and method of growing semiconductor crystal 有权
标题翻译：半导体元件，半导体器件，半导体晶体管及其生长半导体晶体的方法
公开(公告)号：JP2010219269A
公开(公告)日：2010-09-30
申请号：JP2009063998
申请日：2009-03-17
申请人： Toshiba Corp , 株式会社東芝
发明人： OBA YASUO , KANEKO KATSURA , KATSUNO HIROSHI , KUSHIBE MITSUHIRO
IPC分类号： H01L33/32 , C23C16/34 , C30B25/18 , C30B29/38 , H01L21/205
CPC分类号： H01L2224/16145 , H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element, a semiconductor device, a semiconductor wafer, and a method of growing semiconductor crystal such that warpage of a substrate is suppressed and an influence of interface reflection is reduced to achieve high light extraction efficiency and high internal light emission efficiency. SOLUTION: The semiconductor element includes a sapphire substrate 105 which has a principal surface 106 comprising a (c) plane, and also has a recessed portion 110a formed on the principal surface, a first buffer layer 110 which is provided on the principal surface of the sapphire substrate and made of crystalline AlN, and a semiconductor layer 190 which is provided on the first buffer layer and made of a nitride semiconductor. The first buffer layer has a cavity 110a provided over the recessed portion of the sapphire substrate, and the first buffer layer has a first region 110e and a second region 110f provided between the first region and the sapphire substrate and having higher carbon concentration than the first region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供半导体元件，半导体器件，半导体晶片以及半导体晶体的生长方法，使得抑制基板的翘曲并降低界面反射的影响以实现高的光提取效率高，内部发光效率高。解决方案：半导体元件包括蓝宝石衬底105，其具有包括（c）面的主表面106，并且还具有形成在主表面上的凹部110a，设置在主体上的第一缓冲层110 蓝宝石衬底的表面和由结晶AlN制成的半导体层190，其设置在第一缓冲层上并由氮化物半导体制成。第一缓冲层具有设置在蓝宝石衬底的凹部上的空腔110a，第一缓冲层具有第一区域110e和设置在第一区域和蓝宝石衬底之间的第二区域110f，并且具有比第一缓冲层高的第一区域地区。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010171142A Semiconductor light emitting element, and semiconductor light emitting device 有权
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：JP2010171142A
公开(公告)日：2010-08-05
申请号：JP2009011274
申请日：2009-01-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/36
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and a semiconductor light emitting device that have high light extraction efficiency and high reproducibility of an optical output. SOLUTION: The semiconductor light emitting element includes: a laminate structure which has a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and second semiconductor layer, a part of the first semiconductor layer being exposed on a first principal surface on the side of the second semiconductor layer by selectively removing the second semiconductor layer and light emitting layer; a first electrode and a second reflective electrode respectively connected to the first and second semiconductor layers on the first principal surface; and a light-transmissive insulating layer provided between a part of the second electrode and the second semiconductor layer, wherein the distance from an outer edge of the second electrode to an inner edge of the insulating layer in a region where the second electrode and insulating layer overlap with each other is shorter at a center part of the first principal surface than at a peripheral part. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高光提取效率和光输出的高再现性的半导体发光元件和半导体发光器件。解决方案：半导体发光元件包括：具有第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的层叠结构，第一半导体层的一部分通过选择性地去除第二半导体层和发光层，在第二半导体层侧的第一主表面上露出; 分别连接到第一主表面上的第一和第二半导体层的第一电极和第二反射电极; 以及设置在第二电极和第二半导体层的一部分之间的透光绝缘层，其中在第二电极和绝缘层的区域中从第二电极的外边缘到绝缘层的内边缘的距离在第一主表面的中心部分比在周边部分彼此重叠更短。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2013102192A Semiconductor light-emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013102192A
公开(公告)日：2013-05-23
申请号：JP2013002891
申请日：2013-01-10
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can efficiently extract light generated at a luminescent layer, and provide a manufacturing method of the same.SOLUTION: A semiconductor light-emitting element having a first semiconductor layer 1, a second semiconductor layer 2 and a luminescent layer 3 provided between the first and second semiconductor layers, comprises: a laminated structure 1s on which a part of the first semiconductor 1 is exposed on a first principal surface 1a on the second semiconductor layer 2 side by selective removal of the second semiconductor layer 2 and the luminescent layer 3; first and second electrodes including a first region containing a first metal film 7 provided on the first principal surface 1a on the first semiconductor layer 1 and a second region provided on the first semiconductor region and containing a second metal film 4 having a reflection rate against light emitted from the luminescent layer 3 higher than that of the first metal film 7 and contact resistance against the first semiconductor layer 1 higher than that of the first metal film 7; and a dielectric lamination film 11 provided on regions of the first semiconductor layer 1 and the second semiconductor layer 2, which are not covered with the first and second electrodes, and in which a plurality of dielectric films having refraction indexes different from each other are laminated.
摘要翻译：要解决的问题：提供一种半导体发光元件，其能够有效地提取在发光层产生的光，并提供其制造方法。解决方案：具有设置在第一和第二半导体层之间的第一半导体层1，第二半导体层2和发光层3的半导体发光元件包括：层叠结构体1，其上形成有第一半导体层半导体1通过选择性地去除第二半导体层2和发光层3而暴露在第二半导体层2侧的第一主表面1a上; 第一和第二电极包括第一区域，第一区域包含设置在第一半导体层1上的第一主表面1a上的第一金属膜7和设置在第一半导体区域上的第二区域，并且包含具有反射率的第二金属膜4 从第一金属膜7的发光层3发射的高于第一金属膜7的第一半导体层1的接触电阻高于第一金属膜7; 以及设置在第一半导体层1和第二半导体层2的未被第一和第二电极覆盖的区域并且其中具有彼此不同的折射率的多个电介质膜的电介质层压膜11 。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013065630A Semiconductor light-emitting element, wafer, method of manufacturing semiconductor light-emitting element, and method of manufacturing wafer 有权
标题翻译：半导体发光元件，散热器，制造半导体发光元件的方法及其制造方法
公开(公告)号：JP2013065630A
公开(公告)日：2013-04-11
申请号：JP2011202319
申请日：2011-09-15
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSHIBE MITSUHIRO , OBA YASUO , KATSUNO HIROSHI , KANEKO KATSURA , YAMADA SHINJI
IPC分类号： H01L33/32 , H01S5/343
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high efficiency, a wafer, a method of manufacturing the semiconductor light-emitting element, and a method of manufacturing the wafer.SOLUTION: The semiconductor light-emitting element includes an n-type first layer, a p-type second layer, a light-emitting part provided between the first layer and the second layer, a first stacked structure provided between the first layer and the light-emitting part, and a second stacked structure provided between the first layer and the first stacked structure. The light-emitting part includes a plurality of barrier layers and well layers provided between the plurality of barrier layers. The first stacked structure includes a plurality of third layers that contain a nitride semiconductor, and a plurality of fourth layers that are alternately stacked with the plurality of third layers and contain GaInN having a thickness thinner than that of the well layers. The second stacked structure includes a plurality of fifth layers that contain a nitride semiconductor having a different composition from that of the third layers, and a plurality of sixth layers that are alternately stacked with the plurality of fifth layers and contain GaInN having a thickness thinner than that of the well layers.
摘要翻译：解决的问题：为了提供高效率的半导体发光元件，晶片，半导体发光元件的制造方法以及晶片的制造方法。解决方案：半导体发光元件包括n型第一层，p型第二层，设置在第一层和第二层之间的发光部，第一层叠结构，设置在第一层和发光部分，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光部分包括设置在多个阻挡层之间的多个阻挡层和阱层。第一堆叠结构包括多个第三层，其包含氮化物半导体，以及多个第四层，其与多个第三层交替堆叠并且包含厚度小于阱层的厚度的GaInN。第二堆叠结构包括多个第五层，其包含与第三层的组成不同的氮化物半导体，以及多个第六层，其与多个第五层交替堆叠并且包含厚度小于井层的。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013051440A Semiconductor device manufacturing method and semiconductor substrate manufacturing method 审中-公开
标题翻译：半导体器件制造方法和半导体衬底制造方法
公开(公告)号：JP2013051440A
公开(公告)日：2013-03-14
申请号：JP2012257694
申请日：2012-11-26
申请人： Toshiba Corp , 株式会社東芝
发明人： OBA YASUO , IIDA SUSUMU
IPC分类号： H01S5/343 , H01L21/205 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To manufacture a high-performance nitride group III-V compound semiconductor device of with high yield and at low cost.SOLUTION: A semiconductor device manufacturing method comprises the steps of: epitaxially growing on a substrate 11, a first buffer layer 12 composed of a high carbon concentration Al-N compound semiconductor single crystal layer and a second buffer layer 13 composed of low carbon concentration Al-N compound semiconductor single crystal layer; epitaxially growing a first nitride group III-V compound semiconductor single crystal layer 14 not doped with an impurity element intentionally on the second buffer layer 13 in a condition of insufficient planarization; epitaxially growing a second nitride group III-V compound single crystal layer 16 on the first nitride group III-V compound semiconductor single crystal layer 14 so as to contain germanium (Ge) of a concentration of 1×10cmand over; and epitaxially growing element structure parts (21-29) on the second nitride group III-V compound single crystal layer 16.
摘要翻译：要解决的问题：以高产率和低成本制造高性能氮化物III-V族化合物半导体器件。解决方案：半导体器件制造方法包括以下步骤：在衬底11上外延生长由第一缓冲层12构成的第一缓冲层12，第一缓冲层12由高碳浓度Al-N化合物半导体单晶层和第二缓冲层13构成碳浓度Al-N化合物半导体单晶层; 在不充分平坦化的条件下外延生长在第二缓冲层13上不掺杂杂质元素的第一氮化物III-V族化合物半导体单晶层14; 在第一氮化物III-V族化合物半导体单晶层14上外延生长第二氮化物III-V族化合物单晶层16，以包含浓度为1×10 17 cm - 3 及以上; 并且在第二氮化物III-V族化合物单晶层16上外延生长元件结构部分（21-29）。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013030817A Semiconductor light-emitting element and semiconductor light-emitting device 有权
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：JP2013030817A
公开(公告)日：2013-02-07
申请号：JP2012245836
申请日：2012-11-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/10 , H01L33/48
CPC分类号： H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a semiconductor light-emitting device with high mountability, excellent performance characteristics, and high light extraction efficiency.SOLUTION: A semiconductor light-emitting element includes: a stacked structure having an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a high-reflective insulating layer provided in contact with the n-type semiconductor layer in a region where the n-side electrode is not provided and having a reflective index with respect to light emitted from the light-emitting layer higher than the reflective index of the n-side electrode with respect to the light; and a metal layer provided in contact with at least a part of the n-side electrode and at least a part of the high-reflective insulating layer and electrically connected to the n-side electrode.
摘要翻译：解决的问题：提供具有高安装性，优异的性能特性和高的光提取效率的半导体发光元件和半导体发光器件。解决方案：半导体发光元件包括：具有n型半导体层，p型半导体层和设置在n型半导体层和p型之间的发光层的层叠结构半导体层; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 在没有设置n侧电极的区域中与n型半导体层接触而设置的高反射绝缘层，并且相对于从发光层发射的光的反射率高于反射指数 n侧电极相对于光; 以及设置成与n侧电极的至少一部分和高反射性绝缘层的至少一部分接触并与n侧电极电连接的金属层。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012227560A Semiconductor light-emitting element and semiconductor light-emitting device 有权
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：JP2012227560A
公开(公告)日：2012-11-15
申请号：JP2012184944
申请日：2012-08-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA
IPC分类号： H01L33/38 , H01L33/44 , H01L33/50
CPC分类号： H01L2224/16145 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that has high luminance, prevents degradation, and can improve reliability, and to provide a semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting element comprises: a first semiconductor layer; a second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on the first semiconductor layer; a second electrode having a first metal film provided on the second semiconductor layer and containing at least either of silver and silver alloy and a second metal film provided on the first metal film and composed of a metal containing substantially no silver; and a dielectric film provided spaced apart from the first metal film on the second semiconductor layer. The second metal film coats the first metal film, at least a part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.
摘要翻译：要解决的问题：提供一种具有高亮度，防止劣化并且可以提高可靠性的半导体发光元件以及提供半导体发光器件。解决方案：半导体发光元件包括：第一半导体层; 第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的发光层; 设置在所述第一半导体层上的第一电极; 第二电极，具有设置在第二半导体层上并且包含银和银合金中的至少一种的第一金属膜和设置在第一金属膜上并由基本上不含银的金属构成的第二金属膜; 以及与所述第二半导体层上的所述第一金属膜隔开设置的电介质膜。第二金属膜涂覆第一金属膜，电介质膜的至少一部分和暴露在第一金属膜和电介质膜之间的第二半导体层的表面。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012195321A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2012195321A
公开(公告)日：2012-10-11
申请号：JP2011055859
申请日：2011-03-14
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , MIKI SATOSHI , YAMADA SHINJI , KUSHIBE MITSUHIRO , KANEKO KATSURA
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved light extraction efficiency.SOLUTION: A semiconductor light-emitting element comprises a stacked structure, first electrodes, and second electrodes. The stacked structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer. The stacked structure has a first primary surface at the first semiconductor layer side and a second primary surface at the second semiconductor layer side. Each of the first electrodes has a first contact portion contacting the first semiconductor layer at the second primary surface side. Each of the second electrodes has a portion contacting the second semiconductor layer on the second primary surface. The surface of the primary surface side of the first semiconductor layer has first portions and second portions. Each of the first portions has a portion overlapping the contact surface between the first contact portion and the first semiconductor layer when viewed from the stack direction. Each of the second portions has a portion overlapping the second semiconductor layer when viewed from the stack direction. The second portion has an irregularity with a pitch longer than the peak wavelength of emission light emitted from the light-emitting layer. The first portion is less irregular than the second portion.
摘要翻译：要解决的问题：提供具有改进的光提取效率的半导体发光元件。解决方案：半导体发光元件包括层叠结构，第一电极和第二电极。层叠结构包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光层。层叠结构在第一半导体层侧具有第一主表面，在第二半导体层侧具有第二主表面。每个第一电极具有在第二主表面侧与第一半导体层接触的第一接触部分。每个第二电极具有与第二主表面上的第二半导体层接触的部分。第一半导体层的主表面侧的表面具有第一部分和第二部分。当从堆叠方向观察时，每个第一部分具有与第一接触部分和第一半导体层之间的接触表面重叠的部分。当从堆叠方向观察时，每个第二部分具有与第二半导体层重叠的部分。第二部分具有比从发光层发射的发射光的峰值波长更长的间距的不规则性。第一部分比第二部分不规则。版权所有（C）2013，JPO＆INPIT

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