专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS58181797A Apparatus for pulling up single crystal silicon 失效
标题翻译：用于拉出单晶硅的装置
公开(公告)号：JPS58181797A
公开(公告)日：1983-10-24
申请号：JP6509982
申请日：1982-04-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C30B15/10 , C30B15/14 , C30B29/06 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:To inhibit increase in the concns. of carbon and oxygen in single crystal Si and to prevent deterioration in the characteristics of a semiconductor device, by specifying the materials of the crucible, the protector and the heat insulating tubes of an apparatus for manufacturing single crystal Si by the CZ method. CONSTITUTION:A crucible 2 is supported in a chamber 1 by a freely rotatable rod 4 through a protector 3 covering the outside of the crucible 2, and a cylindrical carbon heater 5 and heat insulating tubes 6, 7 are arranged around the protector 3 in order. A pulling shaft 9 holding a seed crystal 8 at the lower end is rotatably suspended from the upper opening of the chamber 1. The crucible 2, the protector 3 and the tubes 6, 7 are made of silicon nitride, silicon carbide or quartz glass. For example, the crucible 2 is made of quartz, and the protector 3 and the tubes 6, 7 are made of a sintered silicon nitride body. Gaseous SiO2 produced by the reaction of molten Si 10 with the crucible 2 does not react with those members, so no gaseous CO is produced, and the concns. of C and O in pulled single crystal Si can be reduced.
摘要翻译：目的：抑制浓度增加的单晶Si中的碳和氧，并且通过用CZ方法指定用于制造单晶Si的装置的坩埚，保护器和隔热管的材料来防止半导体器件的特性的劣化。构成：坩埚2通过可自由转动的杆4通过覆盖坩埚2的外部的保护器3支撑在腔室1中，并且圆筒形碳加热器5和隔热管6,7依次布置在保护器3的周围。保持下端的晶种8的拉动轴9从室1的上开口可旋转地悬挂。坩埚2，保护器3和管6,7由氮化硅，碳化硅或石英玻璃制成。例如，坩埚2由石英制成，保护器3和管6,7由氮化硅烧结体构成。通过熔融Si 10与坩埚2的反应产生的气态SiO 2与这些部件不反应，因此不产生气体CO。的拉伸单晶Si中的C和O可以减少。

2. 发明专利

JPS58185495A Silicon nitride jig for pulling up silicon single crystal 失效
标题翻译：硅胶浸渍硅胶单晶
公开(公告)号：JPS58185495A
公开(公告)日：1983-10-29
申请号：JP6577582
申请日：1982-04-20
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , C30B15/10 , C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:In a jig for pulling up single crystal silicon, the part contacting with the silicon melt is finished on its surface up to a prescribed level of roughness to enable constant production of good-quality single crystal silicon. CONSTITUTION:A silicon nitride jig is used to pull up a cylindrical and plate single crystal of silicon form its melt. More than 90% of the area with which the silicon melt comes into contact is finished to such a level of surface roughness less than 400mu in Hmax. This finishing causes no polycrystallization of the silicon to give good-quality single crystal of silicon constantly.
摘要翻译：目的：在用于拉出单晶硅的夹具中，与硅熔体接触的部分在其表面上完成达到规定的粗糙度，以使得能够恒定地生产优质单晶硅。构成：使用氮化硅夹具从其熔体中提取硅的圆柱形和板状单晶。超过90％的硅熔体接触区域的表面粗糙度达到Hmax以下的表面粗糙度小于400μm。这种整理不会导致硅的多晶化，从而不断地提供优质硅晶体。

3. 发明专利

JPS5939348A Apparatus for heating specimen in vacuum 失效
标题翻译：用于在真空中加热样品的装置
公开(公告)号：JPS5939348A
公开(公告)日：1984-03-03
申请号：JP14877382
申请日：1982-08-27
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MIKATA HIROICHI , WATANABE MASAHARU , INOUE TOMOYASU , TAKAHASHI SHIYOUICHI
IPC分类号： H05B3/20 , B01L7/00 , G01N25/00
摘要： PURPOSE: To make it possible to uniformly heat a specimen, by a method wherein a heat transfer plate is formed of a sapphire plate and a thin film heater comprising tungsten or the like is formed on the rear surface of the sapphire plate.
CONSTITUTION: A thin film heater 2 is deposited and formed on the whole rear surface of a heat transfer member 1 comprising a monocrystalline sapphire plate with a thickness of about 1mm. The thin film heater 2 is formed, for example, by vapor depositing tungsten under high vacuum of 10
-5 Torr or less. A pair of rod shaped electrodes 3a, 3b are parallelly arranged to the periphery of the rear surface part of the thin film heater 2 to be attached to said thin film heater 2. By applying a voltage between the electrodes 3a, 3b, a current is supplied to the thin film heater 2 to heat the same.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过在蓝宝石板的后表面形成由蓝宝石板形成的传热板和包含钨等的薄膜加热器，可以均匀地加热试样。构成：薄膜加热器2沉积并形成在包括厚度约1mm的单晶蓝宝石板的传热构件1的整个后表面上。薄膜加热器2例如通过气相沉积钨在10 -5乇或更低的高真空下。一对棒状电极3a，3b平行地布置在薄膜加热器2的后表面部分的外围，以附着到所述薄膜加热器2.通过在电极3a，3b之间施加电压，电流为供给到薄膜加热器2以加热薄膜加热器2。

4. 发明专利

JPS58185496A Method of making silicon nitride jig for pulling up silicon single crystal 失效
标题翻译：制造硅化硅夹具用于拉伸硅单晶的方法
公开(公告)号：JPS58185496A
公开(公告)日：1983-10-29
申请号：JP6577782
申请日：1982-04-20
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B41/87 , C30B15/10 , C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:After a smooth base material of a desired shape is coated with a film of crystalline silicon nitride by the CVD method, the substrate is removed to give a crucible that can give good-quality single crystal of low oxygen content. CONSTITUTION:A substrate of a desired shape with smooth surfaces, e.g., a glass carbon with a surface roughness of less than 350mu Hmax, is placed in a CVD reaction furnace to effect coating with crystalline silicon nitride. Then, the carbon substrate is removed by oxidation. The resultant silicon nitride crucible has a small surface area and has a small amount of silicon nitride dissolved in the silicon melt, whereby the silicon crystal grows as a single crystal not as a polycrystal.
摘要翻译：目的：通过CVD法将所需形状的光滑基材涂布在结晶氮化硅膜上之后，除去基板，得到可提供低氧含量的优质单晶的坩埚。构成：将具有光滑表面的所需形状的基底，例如表面粗糙度小于350μmHmax的玻璃碳放置在CVD反应炉中，以用结晶氮化硅进行涂覆。然后，通过氧化除去碳基板。所得到的氮化硅坩埚的表面积小，并且在硅熔体中溶解有少量的氮化硅，由此，硅晶体不以多晶为单晶生长。

5. 发明专利

JPS58181798A Manufacture of single crystal silicon 失效
标题翻译：单晶硅的制造
公开(公告)号：JPS58181798A
公开(公告)日：1983-10-24
申请号：JP6510182
申请日：1982-04-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C30B15/14 , C30B15/10 , C30B29/06 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:To always obtain an Si crystal as a single crystal in the manufacture of single crystal Si by the CZ method using a silicon nitride crucible by restricting the temp. of the crucible. CONSTITUTION:A silicon nitride crucible 2 is supported in a chamber 1 by a rotating shaft 4 through a protector 3 covering the outside of the crucible 2, and a cylindrical heater 5 and heat insulating tubes 6, 7 are arranged around the protector 3 in order. Si as a starting material is put in the crucible 2 and melted with the heater 5. A seed crystal 8 attached to the lower end of a rotatable pulling shaft 9 is dipped in the molten Si 10, and the shaft 9 is pulled up. When the Si is melted, the crucible 2 is kept at
摘要翻译：目的：通过使用氮化硅坩埚通过限制温度通过CZ方法在制造单晶Si中始终获得作为单晶的Si晶体。的坩埚。构成：氮化硅坩埚2通过旋转轴4通过覆盖坩埚2的外部的保护器3支撑在腔室1中，并且圆筒形加热器5和隔热管6,7依次布置在保护器3的周围。将Si作为起始材料放入坩埚2中并用加热器5熔化。将安装在可旋转牵引轴9的下端的晶种8浸入熔融Si 10中，并将轴9拉起。当Si熔化时，坩埚2保持在<= 1520℃。坩埚2的氮化硅容易地溶解在高于温度的熔融Si中。在Si晶体的拉伸过程中氮化硅沉积并漂浮在熔融Si的表面上。沉积的氮化硅接触固体和液体之间的界面，阻碍了Si晶体的生长。当硅晶体被吸收时，Si晶体被制成多晶体。

6. 发明专利

JPS58181794A Die for manufacturing platelike silicon crystal 失效
标题翻译：用于制造板状硅晶体
公开(公告)号：JPS58181794A
公开(公告)日：1983-10-24
申请号：JP6510082
申请日：1982-04-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/34
摘要： PURPOSE:To efficiently obtain high-quality platelike single crystal Si having a prescribed shape, by filling Si into the hollow part of a die body made of crystalline silicon nitride. CONSTITUTION:A crystalline silicon nitride film 12 is deposited on the outer surface of a polycrystal Si substrate 11 by a CVD method. Both ends of the resulting platelike body are worked to a prescribed shape to obtain a die 14 for manufacturing a platelike Si crystal. The die 14 consists of a hollow frame- shaped die body 13 made of crystalline silicon nitride and the Si substrate 11 filled into the hollow part of the body 13. The die 14 is set on molten Si in a crucible, and pulling is carried out from the top of the die 14 using a platelike seed crystal. The Si substrate 11 in the body 13 is melted to fill the hollow part of the body 13, so the molten Si 15 in the crucible rises efficiently in the hollow part of the body 13, and platelike single crystal Si can be manufactured efficiently. Since the Si substrate 11 is not removed, no pollution is caused, and high-quality platelike single crystal Si is obtd.
摘要翻译：目的：为了有效地获得具有规定形状的高品质板状单晶Si，通过将Si填充到由结晶氮化硅制成的模具体的中空部分中。构成：通过CVD法在多晶Si衬底11的外表面上沉积结晶氮化硅膜12。将所得板状体的两端加工成规定形状，得到板状Si晶体的制造用模具14。模具14包括由结晶氮化硅制成的中空的框状模体13和填充到主体13的中空部分中的Si衬底11.将模具14设置在坩埚中的熔融Si上，并且进行拉伸从模具14的顶部使用板状晶种。主体13中的Si基板11熔化以填充主体13的中空部分，因此坩埚中的熔融Si 15有效地升高到主体13的中空部分中，并且可以有效地制造板状单晶Si。由于Si基板11没有被去除，所以不会产生污染，并且能够获得高质量的板状单晶Si。

7. 发明专利

JPS58181795A Die for manufacturing platelike silicon crystal 失效
标题翻译：用于制造板状硅晶体
公开(公告)号：JPS58181795A
公开(公告)日：1983-10-24
申请号：JP6577482
申请日：1982-04-20
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/34
摘要： PURPOSE:To efficiently manufacture platelike single crystal Si, by using crystalline silicon nitride as the material of the titled die. CONSTITUTION:A die 1 is set on a crucible so that the lower end part is immersed in molten Si in the crucible. A heater 2 is placed around the crucible except the upper end part of the die 1, and a heat shield 3 is mounted on the heater 2. Molten Si4 rises in the hollow part of the die 1 from the crucible by capillarity. The Si4 is pulled up by using a seed crystal 5 to obtain platelike single crystal Si. The die 1 is made of silicon nitride. Since silicon nitride does not react with molten Si, no impurities enter the molten Si, preventing the formation of polycrystal Si. Accordingly, platelike single crystal Si can be manufactured efficiently.
摘要翻译：目的：通过使用晶体氮化硅作为标题模具的材料，有效地制造板状单晶硅。构成：将模具1放置在坩埚上，使得下端部浸入坩埚中的熔融Si中。加热器2放置在除了模具1的上端部分之外的坩埚周围，并且隔热件3安装在加热器2上。熔融Si 4在坩埚的中空部分中通过毛细作用而上升。通过使用晶种5将Si4拉起，得到板状单晶Si。模具1由氮化硅制成。由于氮化硅不与熔融Si反应，因此不会使杂质进入熔融Si，从而形成多晶Si。因此，可以有效地制造板状单晶Si。

8. 发明专利

JPS58181793A Silicon nitride jig for pulling up single crystal silicon 失效
标题翻译：硅酸钠吸取单晶硅
公开(公告)号：JPS58181793A
公开(公告)日：1983-10-24
申请号：JP6510282
申请日：1982-04-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C04B35/584 , C30B15/10 , C30B15/34 , C30B29/06 , H01L21/208
CPC分类号： C30B15/10
摘要： PURPOSE:To prevent an Si crystal from being made polycrystalline and to obtain single crystal Si, by restricting the contents of B, Al and Fe in silicon nitride as the material of jigs. CONSTITUTION:Jigs for pulling up columnar or platelike single crystal Si from molten Si are made of crystalline silicon nitride having
摘要翻译：目的：通过限制作为夹具材料的氮化硅中的B，Al和Fe的含量，防止Si晶体成为多晶并获得单晶Si。构成：从熔融Si中拉出柱状或板状单晶Si的夹具由具有<= 3ppm B含量<5ppm A含量和<= 10ppm Fe含量的结晶氮化硅制成。当使用包括坩埚和管芯的夹具时，少数载流子在单晶状态下具有长寿命，并且可以看到具有良好控制电阻值的Si晶体。

9. 发明专利

JPS58181792A Apparatus for pulling up single crystal silicon 失效
标题翻译：用于拉出单晶硅的装置
公开(公告)号：JPS58181792A
公开(公告)日：1983-10-24
申请号：JP6509882
申请日：1982-04-19
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp
发明人： MATSUO HIDEYASU , NAGASHIMA HIDEO , WATANABE MASAHARU , USAMI TOSHIROU , MURAOKA HISASHI
IPC分类号： C30B15/10 , C30B15/12 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/305
摘要： PURPOSE:To prevent a change in the resistance value of single crystal Si and to uniformalize and reduce the concn. of oxygen as an impurity by immersing a silicon nitride structure in molten Si in the crucible of an apparatus for manufacturing single crystal Si by the CZ method to prevent the convection of the molten Si. CONSTITUTION:A quartz crucible 2 is supported in a chamber 1 by a freely rotatable rod 4 through a graphite protector 3 covering the outside of the crucible 2, and a cylindrical heater 5 and heat insulating tubes 6, 7 are arranged around the protector 3 in order. Si as a starting material and a dopant for controlling the resistance value of a single crystal Si ingot are put in the crucible 2 and melted with the heater 5. A seed crystal 8 attached to the lower end of a rotatable pulling shaft 9 is dipped in the molten Si10, and the shaft 9 is pulled up. In order to prevent the convection of the molten Si10 during the pulling, a crucible-shaped silicon nitride structure 11 having holes 11a... at the desired positions of the bottom is immersed in the Si10, and the upper part protruding from the surface of the melt 10 is supported on the crucible 2.
摘要翻译：目的：防止单晶硅电阻值的变化，均匀化，降低浓度。通过用CZ法将用于制造单晶Si的装置的坩埚中的氮化硅结构浸渍在熔融Si中的氧作为杂质，以防止熔融Si的对流。构成：石英坩埚2通过可自由旋转的棒4通过覆盖坩埚2的外部的石墨保护器3支撑在腔室1中，并且圆柱形加热器5和隔热管6,7围绕保护器3布置订购。将作为原料的Si和用于控制单晶Si锭的电阻值的掺杂剂放入坩埚2中并用加热器5熔化。将安装在可旋转的牵引轴9的下端的晶种8浸入熔融的Si10和轴9被拉起。为了防止熔融Si10在拉拔期间的对流，将具有位于底部的所需位置的孔11a ...的坩埚状氮化硅结构11浸渍在Si10中，并且从上表面突出的上部熔体10被支撑在坩埚2上。

10. 发明专利

JPH06104266A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06104266A
公开(公告)日：1994-04-15
申请号：JP24998992
申请日：1992-09-18
申请人： TOSHIBA CORP
发明人： MIZUSHIMA ICHIRO , WATANABE MASAHARU
IPC分类号： H01L21/322
摘要： PURPOSE:To provide a gettering method capable of removing contamination matter suffuciently even in a low temperature heat treatment. CONSTITUTION:This embodiment comprises a step where silicon ions are implanted into a silicon substrate under conditions of an acceleration voltage of 10keV or less and a dose amount of 1X10 cm to 1X10 cm , a step where, before or after this implanting step of silicon ions, in a region of depth less than 100nm from the surface of the silicon substrate, an impurity region made of a III group element or a V group element having impurity density of 1X10 cm or more is formed, and a step where a heat treatment of 700 deg.C or more of the silicon substrate is performed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式