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    • 1. 发明专利
    • Scratch testing machine and scratch testing method
    • 剪切测试机和切割测试方法
    • JP2012168102A
    • 2012-09-06
    • JP2011030853
    • 2011-02-16
    • Tokyo Institute Of TechnologyToppan Printing Co Ltd凸版印刷株式会社国立大学法人東京工業大学
    • KISHIMOTO KIKUOINABA KAZUAKIKUMAGAI OSAMUYANAKA ASAAKIHINO YOSHIHIRO
    • G01N3/46
    • PROBLEM TO BE SOLVED: To secure reproducibility of test results of a scratch test and a determination results of a scratch on a film-like specimen and to objectively prove the reliability of the determination results.SOLUTION: A scratch testing machine 10 includes a mounting base 11 having a mounting surface 11A capable of fixing a film-like specimen 21; a scratch member 13 having a tip 13a capable of coming into contact with the surface of the film-like specimen 21 that is fixed to the mounting surface 11A; a drive device 14 capable of moving the mounting base 11 in relative to the scratch member 13 in the scratching direction, with the tip 13a of the scratch member 13 brought into contact with the surface of the film-like specimen 21 fixed to the mounting surface 11A; a microscope 15 enlargingly imaging the surface area including a contact area with which at least the tip 13a of the scratch member 13 comes into contact and a trajectory area with which the tip 13a of the scratch member 13 has come in contact, out of the surface of the film-like specimen 21, and outputting the image data of the imaging result; and a display device 16 displaying the image data.
    • 要解决的问题:为了确保划痕测试的测试结果的再现性和薄膜样品上划痕的确定结果,并客观证明确定结果的可靠性。 刮擦试验机10包括:安装基座11,其具有能够固定薄膜状试样21的安装面11A; 具有能够与固定在安装面11A上的膜状试样21的表面接触的尖端13a的刮擦构件13; 驱动装置14,其能够使刮板构件13的前端13a与固定于安装面的膜状试样21的表面相接触地沿着划伤方向相对于划痕构件13移动安装基座11 11A; 显微镜15对表面积进行放大成像,该表面区域包括至少擦拭构件13的尖端13a接触的接触区域和划痕构件13的尖端13a与其接触的轨迹区域, 并输出成像结果的图像数据; 以及显示图像数据的显示装置16。 版权所有(C)2012,JPO&INPIT
    • 2. 发明专利
    • Photomask and method for manufacturing photomask
    • 光电子和制造光电子的方法
    • JP2011075808A
    • 2011-04-14
    • JP2009226855
    • 2009-09-30
    • Toppan Printing Co Ltd凸版印刷株式会社
    • MATSUURA TAKAHIROIDA ISATOHINO YOSHIHIRO
    • G03F1/54H01L21/027
    • PROBLEM TO BE SOLVED: To provide a photomask capable of suppressing a resolution failure with respect to a wafer by suppressing the deterioration of a light-shielding film to caused by use in exposure in a photolithography, and to provide a method for manufacturing the photomask.
      SOLUTION: The photomask has a light-shielding film on a surface of a glass substrate where the surface of a metal film that forms a light-shielding portion is passivated. The passivation is preferably carried out by oxidation processing. For example, either HNO
      3 processing or ozone water processing is suitable. By forming an oxide film by the passivation processing on the surface of the metal light-shielding film, a change of the metal film into CrO
      3 caused by the influences of ozone generated from ArF and of ArF energy can be prevented, thus suppressing the deterioration of the light-shielding film and allowing the stable use of the photomask for a longer period of time.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种能够通过抑制由光刻中的曝光引起的遮光膜的劣化而抑制相对于晶片的分辨率故障的光掩模,并且提供一种制造方法 光掩模 解决方案:光掩模在玻璃基板的表面上形成遮光膜,其中形成遮光部分的金属膜的表面被钝化。 钝化优选通过氧化处理进行。 例如,处理或臭氧水处理都是适合的。 通过在金属遮光膜的表面上通过钝化处理形成氧化物膜,由ArF和ArF能量产生的臭氧的影响引起的金属膜变成CrO 3 SB 3 因此能够抑制遮光膜的劣化,能够长时间稳定地使用光掩模。 版权所有(C)2011,JPO&INPIT
    • 3. 发明专利
    • Pellicle and method for manufacturing the same
    • 制造方法及其制造方法
    • JP2010066619A
    • 2010-03-25
    • JP2008234183
    • 2008-09-12
    • Toppan Printing Co Ltd凸版印刷株式会社
    • MATSUURA TAKAHIROIDA ISATOTAKAGI NORIAKIHINO YOSHIHIRO
    • G03F1/64
    • PROBLEM TO BE SOLVED: To provide a pellicle and a method for manufacturing the pellicle that prevents the deposition of a sulfuric acid on a photomask, resultantly preventing the deposition of the sulfuric acid on a substrate by appropriately eliminating, in a stage of manufacturing, sulfur oxides such as sulfuric acids or sulfur compounds such as organic sulfur components derived from a pellicle frame, which have a possibility of depositing the sulfuric acid on a photomask. SOLUTION: The pellicle comprises a pellicle film 11 and a pellicle frame 12 wherein the pellicle frame 12 is subjected to alumite treatment using a sulfur compound, and subjected to cleaning treatment with hot water at 60°C or higher and 100°C or lower for 30 minutes or longer. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供防护薄膜组件和防止硫酸沉积在光掩模上的防护薄膜组件的方法,从而通过适当地消除硫酸在基板上的沉积,从而在 制造硫氧化物,例如硫酸或硫化合物,例如衍生自防护薄膜组件框架的有机硫组分,其可能将硫酸沉积在光掩模上。 解决方案:防护薄膜组件包括防护薄膜11和防护薄膜框架12,其中防护薄膜组件框架12使用硫化合物进行防氧化处理,并用60℃或更高和100℃的热水进行清洁处理 或更低30分钟以上。 版权所有(C)2010,JPO&INPIT