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1. 发明专利

JPS5485043A HEAT SENSITIVE HEAD 失效
公开(公告)号：JPS5485043A
公开(公告)日：1979-07-06
申请号：JP15234477
申请日：1977-12-20
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： MIHARA KAKUO , FUJINUMA KOUICHI
IPC分类号： H01L21/70 , B41J2/335 , B41J2/34 , H01L27/00
摘要： PURPOSE:To eliminate the need for diodes and improve quality and reliability by integrating electric paths at every several to several tens of heating resistors to make the electric paths larger and constituting their resistances small. CONSTITUTION:A gate elecrode 6 is provided on an insulation substrate 5 and a SiO2 layer 7 is deposited thereon, by which a channel is formed. Further a p type polycrystalline Si layer 8 which acts as a heating resistor is deposited on the layer 7. An n layer 9 which becomes source and drain electrodes is formed on the layer 8 and a source electrode 10 and drain electrode 11 are mounted to these. When the voltage of the electrode 6 is is OV, no current flows between the electrodes 10, 11 even if a voltage is applied to these. When the gate voltage is made positive and a voltage is applied between the electrodes 10, 11 the current proportional to said voltage flows through the resistor 8 which in turn evolves heat. In this case, the current hardly flows through the electrode 6 and therefore the electric path to the electrode 6 may be made finer.

2. 发明专利

JPS5387239A HEAT SENSITIVE HEADS WITH MULTIPLE LAYER WIRING STRUCTURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS5387239A
公开(公告)日：1978-08-01
申请号：JP145877
申请日：1977-01-12
申请人： TOKYO SHIBAURA ELECTRIC CO , MARUKON DENSHI KK
发明人： TAKENO SHIYOUZOU , TASHIRO MITSUHIKO , MIHARA KAKUO , IWAGAMI MASAKAZU
IPC分类号： H01C7/00 , B41J2/32 , B41J2/335 , B41J2/345 , H01L49/00 , H05K1/16 , H05K3/46
摘要： PURPOSE:To prevent short circuit, occurrence of contact failure, or the like, by printing gold wiring through copper on the surface of oxide insulating substrate to form gold thin film lead wires, and by forming a thin film circuit on the surface of a thick film glaze layer attached on these gold wires.

3. 发明专利

JPS6018300B2 失效
公开(公告)号：JPS6018300B2
公开(公告)日：1985-05-09
申请号：JP15234477
申请日：1977-12-20
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： MIHARA KAKUO , FUJINUMA KOICHI
IPC分类号： H01L21/70 , B41J2/335 , B41J2/34 , H01L27/00

4. 发明专利

JPS5387238A DIODE MATRIX HEAT SENSITIVE HEADS COMBINED IN ONE BODY 失效
公开(公告)号：JPS5387238A
公开(公告)日：1978-08-01
申请号：JP145777
申请日：1977-01-12
申请人： TOKYO SHIBAURA ELECTRIC CO , MARUKON DENSHI KK
发明人： TAKENO SHIYOUZOU , TASHIRO MITSUHIKO , MIHARA KAKUO , IWAGAMI MASAKAZU
IPC分类号： H01C7/00 , B41J2/32 , B41J2/335 , B41J2/345 , H01L49/00
摘要： PURPOSE:To prevent short circuit due to pin holes and occurrence of contact failure, etc., by forming a thick film lead wire group on the surface of a heat resistant insulating substrate, and by fixing heating resistors with a thin film on the surface of a thick film glaze layer covering said group.

5. 发明专利

JPS5541268A SENSIBLE HEAT HEAD 失效
公开(公告)号：JPS5541268A
公开(公告)日：1980-03-24
申请号：JP11489778
申请日：1978-09-19
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： SUZUKI SHIGEO , MIZUNOYA NOBUYUKI , MIHARA KAKUO
IPC分类号： B41J2/335 , B41J2/345 , H01L49/02
摘要： PURPOSE:To expand a range that thick film wiring is formed, by connecting thick film conductors mounted to the upper and lower portions of the first and second glass layers made up on a substrate by building up a thick film connecting conductor between said glass layers, in this sensible heat head provided with the thick film wiring. CONSTITUTION:The first glass layer 3 and the second glass layer 4 are formed on the same plane of a substrate 1, a thick film conductor 2 is made up on the substrate 1 as an inaulating layer and conductors 6, 7 are built up on the upper surfaces of both glass layers. The thick film conductor 2 is esdily drawn and connected to the conductors 6, 7 on the glass layers by forming a thick film connecting conductor 5 between both glass layers. Thus, a large number of thick film conductors can be made up at narrow locations where length is limited because conductors at the upper side and the conductor at the lower side can mutually be built up without being restricted in dimensional shapes as multilayer wiring structure.

6. 发明专利

JPS52135745A PREPARATION OF THIN FILM HEATTSENSITIVE HEAD 失效
公开(公告)号：JPS52135745A
公开(公告)日：1977-11-14
申请号：JP5297276
申请日：1976-05-10
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： TAKENO SHIYOUZOU , MIHARA KAKUO
IPC分类号： B41J2/335 , H01L49/02
摘要： PURPOSE:To provide a method for preparation of thin film heat-sensitive head, in which conductor layer is oxidized to form protruded heat-sensitive portion to prevent heatsensitive portion from adhesion of dust and improve quality of image.

7. 发明专利

JPS5272573A PRODUCTION OF LEAD FRAME 失效
公开(公告)号：JPS5272573A
公开(公告)日：1977-06-17
申请号：JP14897775
申请日：1975-12-13
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： NEMOTO MINORU , MIHARA KAKUO
IPC分类号： H01L23/50 , H01L21/48 , H01L23/48
摘要： PURPOSE:To prevent denting of a copper foil in the portions of windows for receiving and holding pellets on a film in the compression bonding process in a lead frame for semiconductor pellets comprising thermo-compression bonding of the copper foil on an electrically insulating film.

8. 发明专利

JPS6112787B2 JPS6112787B2 - 失效
公开(公告)号：JPS6112787B2
公开(公告)日：1986-04-10
申请号：JP11489778
申请日：1978-09-19
申请人： Tokyo Shibaura Electric Co
发明人： SUZUKI SHIGEO , MIZUNOYA NOBUYUKI , MIHARA KAKUO
IPC分类号： B41J2/335 , B41J2/345 , H01L49/02

9. 发明专利

JPS56150575A PRODUCTION OF THIN FILM THERMAL HEAD 失效
公开(公告)号：JPS56150575A
公开(公告)日：1981-11-21
申请号：JP9397180
申请日：1980-07-11
申请人： TOKYO SHIBAURA ELECTRIC CO , MARUKON DENSHI KK
发明人： TASHIRO MITSUHIKO , TAKENO SHIYOUZOU , MIHARA KAKUO , KINOSHITA TADAYOSHI
IPC分类号： H01C7/00 , H01L49/00 , H01L49/02
摘要： PURPOSE:To freely select a shape and a film thickness in accordance with a dot size and an electric power density, and to enable the settlement of a resistance to a desired value, by mixing silicon dioxide in a Ta-N thin film, and controlling the amount of SiO2 to adjust a resistivity. CONSTITUTION:Ta-SiO2 or Ta-N-SiO2 is used as a resistor material for a thin film thermal head, instead of a Ta-N material. The Ta-SiO2 or Ta-N-SiO2 material is prepared by putting Ta 6 latticedly onto an SiO2 plate 5 to form a target 7, and spattering the target 7 in an Ar or Ar+N2 atmosphere. By changing the area ratio of Ta to SiO2 of the target 7, SiO2 content is controlled, and the specific of the film can be consequently varied easily and freely. As a result, characteristics such as a resistance to an electric power, a printing density, the margin of a head potential, etc. are remarkably improved, as compared with those in case of employing a conventional Ta-N material.

10. 发明专利

JPS5320766A FILM CARRIER PRODUCTION FOR LEAD FRAMES 失效
公开(公告)号：JPS5320766A
公开(公告)日：1978-02-25
申请号：JP9444776
申请日：1976-08-10
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： NEMOTO MINORU , MIHARA KAKUO , KAWAI HIDEO
IPC分类号： H01L21/60
摘要： PURPOSE:To eliminate the position deviation between lead frame patterns and semiconductor pellets by piercing feed holes and positioning holes separately and piercing the positioning holes simultaneously with the windows for accepting and holding semiconductor pellets.

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