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1. 发明专利

JP2006058600A Coating forming agent for making pattern finer, and method for forming fine pattern by using the same 有权
标题翻译：用于制作图案的成型剂，以及使用其形成精细图案的方法
公开(公告)号：JP2006058600A
公开(公告)日：2006-03-02
申请号：JP2004240399
申请日：2004-08-20
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , UENO NAOHISA , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , H01L21/0273
摘要： PROBLEM TO BE SOLVED: To provide a coating forming agent capable of obtainining a finer elliptical hole pattern by applying a thermal shrinkage in the state that the ratio of the minor axis diameter to the major axis diameter of an ellipsoid is maintained while keeping a high thermal shrinkage factor, especially in the formation of the elliptical hole pattern in order to perform a pattern formation shrinked at the uniform thermal shrinkage factor while maintaining a pattern shape in the formation of the finer pattern, and to provide a method for forming the fine pattern using the coating forming agent.
SOLUTION: This coating forming agent is used to be applied on a substrate having a photoresist pattern so as to reduce a gap between photoresist patterns by utilizing the thermal shrinkage effect of the formed coating and to form a fine pattern by substantially completely removing the formed coating. The agent contains (a) a water-soluble polymer and (b) a monomer of a heterocyclic compound having two or more nitrogen atoms in the same ring. The method for forming the fine pattern is carried out by using the agent.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在保持短轴直径与椭圆体的长轴直径的比例的同时，通过施加热收缩来获得更细的椭圆孔图案的涂层形成剂，同时保持特别是在形成椭圆孔图案时，特别是在形成均匀的热收缩率的同时形成图形形成，同时保持图案形状的精细图案，并提供形成使用涂层成型剂的精细图案。解决方案：该涂料形成剂用于施加在具有光致抗蚀剂图案的基材上，以通过利用所形成的涂层的热收缩效应来减小光致抗蚀剂图案之间的间隙，并通过基本上完全去除形成的涂层。该试剂含有（a）水溶性聚合物和（b）在同一环中具有两个或更多个氮原子的杂环化合物的单体。形成精细图案的方法通过使用该试剂进行。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2003316026A Fine pattern forming method 有权
标题翻译：精细图案形成方法
公开(公告)号：JP2003316026A
公开(公告)日：2003-11-06
申请号：JP2002121210
申请日：2002-04-23
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KANEKO FUMITAKE , SUGATA YOSHIKI , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/40 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a fine pattern forming method excellent in controllability of pattern dimensions, capable of obtaining a fine pattern having good profile and properties required in a semiconductor device and free of occurrence of defects as a fine pattern forming method in which the top of a substrate having photoresist patterns is coated with a coating forming agent.
SOLUTION: In the fine pattern forming method, the top of a substrate having photoresist patterns is coated with a coating forming agent for increasing fineness of a pattern, the coating forming agent is heat-shrunk by a heat treatment, the interval between the photoresist patterns is narrowed by utilizing the heat shrinkage, the coating forming agent is then removed by contact with a removing solution containing at least one selected from aqueous alkali solutions and water-soluble organic solvents, and water washing is carried out.
COPYRIGHT: (C)2004,JPO
摘要翻译：解决问题的方案：提供一种图形尺寸的控制性优异的精细图案形成方法，能够获得半导体器件所需的良好轮廓和性能的精细图案，并且不会发生缺陷，作为精细图案形成方法其中具有光刻胶图案的基板的顶部涂覆有涂层形成剂。解决方案：在精细图案形成方法中，具有光致抗蚀剂图案的基板的顶部涂覆有用于提高图案细度的涂层形成剂，涂层形成剂通过热处理而热收缩，间隔通过利用热收缩使光致抗蚀剂图案变窄，然后通过与含有选自碱性水溶液和水溶性有机溶剂中的至少一种的去除溶液接触除去涂层形成剂，并进行水洗。版权所有（C）2004，JPO

3. 发明专利

JP2003084460A Coating agent for making fine resist pattern and method for forming fine resist pattern by using the same 有权
标题翻译：用于制造精细电阻图案的涂料代理和使用它的形成耐磨模式的方法
公开(公告)号：JP2003084460A
公开(公告)日：2003-03-19
申请号：JP2001302555
申请日：2001-09-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , KANEKO FUMITAKE , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a coating agent for making a fine resist pattern so that when a fine resist pattern is to be formed by heat shrinking a resist pattern formed from a photoresist, the resist pattern can be smoothly shrunk by the heat treatment and that the resist can be easily removed by washing with water after the heat treatment of the resist pattern and to provide a method for efficiently forming a fine resist patter by using the above agent. SOLUTION: The coating agent consists of an aqueous solution containing a copolymer of (A) vinylpyrrolidone and (B) at least one kind of monomer selected from water-soluble vinyl compounds except for the (A) component. The method for forming a fine resist pattern includes a process of forming a resist pattern on a substrate, a process of applying a water-soluble resin film on the whole or a part of the resist pattern, a process of heat treating the substrate to reduce the intervals in the pattern, and a process of removing the water-soluble resin film by washing with water.
摘要翻译：要解决的问题：提供一种用于制造精细抗蚀剂图案的涂布剂，使得当通过热收缩由光致抗蚀剂形成的抗蚀剂图案形成精细抗蚀剂图案时，抗蚀剂图案可以通过热处理而平滑地收缩，通过在抗蚀剂图案的热处理之后用水洗涤可以容易地除去抗蚀剂，并提供通过使用上述试剂有效地形成精细抗蚀剂图案的方法。解决方案：包衣剂包含（A）乙烯基吡咯烷酮和（B）至少一种选自除（A）成分以外的水溶性乙烯基化合物的单体的共聚物的水溶液。形成精细抗蚀剂图案的方法包括在基板上形成抗蚀剂图案的工艺，在抗蚀图案的全部或一部分上涂布水溶性树脂膜的工艺，热处理基板以减少图案中的间隔，以及通过用水洗涤除去水溶性树脂膜的工序。

4. 发明专利

JP2003084448A Method for selecting water-soluble resin for forming fine resist pattern 有权
标题翻译：选择水溶性树脂的方法，用于形成精细图案
公开(公告)号：JP2003084448A
公开(公告)日：2003-03-19
申请号：JP2001302553
申请日：2001-09-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , KANEKO FUMITAKE , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/26 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To select a water-soluble resin which can smoothly effect thermal shrinkage of a photoresist pattern by heat treatment and can easily be removed by washing with water after the heat treatment of the resist pattern as a water- soluble resin for forming a coating film for increasing fineness of resist patterning and to efficiently form a fine resist pattern.
SOLUTION: When at least part of a photoresist pattern formed on a substrate is coated with a water-soluble resin, heat treatment is carried out to narrow the pattern space and the water-soluble resin is thoroughly removed to form a fine resist pattern, a water-soluble resin which can be thoroughly removed within 60 sec after the resin is tested by application to a photo-cured body of a resist film before the formation of the above resist pattern, heat treatment at 140°C for 60 sec and washing with pure water at 23°C is selected and used as the above water-soluble resin.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：选择可以通过热处理平滑地影响光致抗蚀剂图案的热收缩的水溶性树脂，并且可以通过在作为形成用水溶性树脂的抗蚀剂图案的热处理之后用水清洗来容易地除去用于增加抗蚀剂图案化的细度并有效地形成精细抗蚀剂图案的涂膜。解决方案：当在水溶性树脂上涂覆形成在基材上的光致抗蚀剂图案的至少一部分时，进行热处理以使图形空间变窄，并且彻底除去水溶性树脂以形成精细的抗蚀剂图案，在形成上述抗蚀剂图案之前，通过在抗蚀剂膜的光固化体上涂布树脂进行树脂测试之后60秒内可以彻底除去的水溶性树脂，在140℃下热处理60秒并进行洗涤选择23℃的纯水作为上述水溶性树脂。

5. 发明专利

JP2010061145A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2010061145A
公开(公告)日：2010-03-18
申请号：JP2009239780
申请日：2009-10-16
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HIRAYAMA HIROSHI , HANEDA HIDEO , FUJIMURA SATOSHI , IWAI TAKESHI , SATO MITSURU , TAKASU RYOICHI , TACHIKAWA TOSHIKAZU , IWASHITA ATSUSHI , ISHIZUKA KEITA , YAMADA TOMOTAKA , TAKAYAMA JUICHI , YOSHIDA MASAAKI
IPC分类号： G03F7/039 , G03F7/26 , C08F20/18 , G03F7/038 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, using a resist composition which is stable relative to solvents used in immersion lithography processes and displays superior sensitivity and resist pattern profile. SOLUTION: The method for forming a resist pattern includes an immersion exposure step and uses a positive resist composition, containing a resin component (A), an acid generator component (B) generating an acid by exposure, and an organic solvent (C). The component (A) exhibits an increase in alkali solubility led by the action of an acid and contains (a1) a structural unit derived from a (meth)acrylate ester having an acid dissociable, dissolution-suppressing group; (a2) a structural unit derived from a (meth)acrylate ester having a lactone unit; (a4) a structural unit derived from (meth)acrylate ester, having a polycyclic group but no structural units (a0), including a structural unit (a0-1) containing an anhydride of a dicarboxylic acid and a structural unit (a0-2) containing a phenolic hydroxyl group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成抗蚀剂图案的方法，使用相对于浸渍光刻工艺中使用的溶剂是稳定的抗蚀剂组合物，并显示出优异的灵敏度和抗蚀剂图案。解决方案：形成抗蚀剂图案的方法包括浸渍曝光步骤，并使用含有树脂组分（A），通过曝光产生酸的酸产生剂组分（B）和有机溶剂（ C）。组分（A）表现出由酸的作用引起的碱溶解度的增加，并且含有（a1）衍生自具有酸解离，溶解抑制基团的（甲基）丙烯酸酯的结构单元; （a2）衍生自具有内酯单元的（甲基）丙烯酸酯的结构单元; （a4）具有多环基但不含结构单元（a0）的（甲基）丙烯酸酯衍生物的结构单元，包括含有二羧酸酐和结构单元（a0-2）的结构单元（a0-1））含有酚羟基。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2004317575A Method for producing hydroxyacid compound, negative resist material and method for forming wiring 审中-公开
公开(公告)号：JP2004317575A
公开(公告)日：2004-11-11
申请号：JP2003107908
申请日：2003-04-11
申请人： Hitachi Ltd , Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社 , 株式会社日立製作所
发明人： YOKOYAMA YOSHIYUKI , HATTORI KOJI , IWASHITA ATSUSHI , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/038 , C07B61/00 , C07C67/29 , C07C69/013 , C07C69/54 , C08F20/28 , C08F32/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a hydroxyacid compound having a reduced metal impurity content and capable of providing a good resist pattern by performing ring opening of a lactone ring using an organic alkali. SOLUTION: The method for producing a hydroxyacid compound having a reduced metal impurity content and suitable for use in a resist material comprises a metal impurity removing step in which metal impurities contained in a starting material compound having a lactone moiety in a side chain are diminished, and an organic alkali hydrolysis step in which ring opening of the lactone moiety of the starting material compound is performed using an organic alkali to obtain the objective hydroxyacid compound. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004294638A Negative resist material and method for forming resist pattern 审中-公开
公开(公告)号：JP2004294638A
公开(公告)日：2004-10-21
申请号：JP2003084981
申请日：2003-03-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： IWASHITA ATSUSHI , TACHIKAWA TOSHIKAZU
IPC分类号： C08F220/02 , C08F220/28 , G03C1/76 , G03F7/033 , G03F7/038 , H01L21/027
CPC分类号： G03F7/0382 , C08F220/28
摘要： PROBLEM TO BE SOLVED: To provide a negative resist material containing an acid generating agent and a polymer compound which is easily synthesized and has favorable storage stability and process stability by an alkali treatment, and to provide a method for forming a resist pattern.
SOLUTION: The negative resist material comprises a polymer compound having a polymerizable unit in which at least a hydroxy acid moiety and a main chain moiety are bonded via only one carbon in a carbon skeleton of the hydroxy acid. The polymer is constituted in such a manner that no space is present between the above hydroxy acid moiety and the main chain moiety, which space has a size allowing an alkali substance to approach them.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2004037570A Coating forming agent for increasing fineness of pattern and fine pattern forming method using the same 有权
公开(公告)号：JP2004037570A
公开(公告)日：2004-02-05
申请号：JP2002191055
申请日：2002-06-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , KANEKO FUMITAKE , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , H01L2051/0063
摘要： PROBLEM TO BE SOLVED: To increase the heat-shrink rate of a coating forming agent in heating and to obtain a fine pattern having a good profile and properties required by the existing semiconductor device when the fineness of a pattern is increased using the coating forming agent.
SOLUTION: The coating forming agent used to form a fine pattern by coating the surface of a substrate having a photoresist pattern and narrowing the spacing of the photoresist pattern by its heat-shrinking action comprises a water-soluble polymer and an amido group-containing monomer.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2004031662A Method of forming fine pattern 有权
公开(公告)号：JP2004031662A
公开(公告)日：2004-01-29
申请号：JP2002186198
申请日：2002-06-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , KANEKO FUMITAKE , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0035
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern to form the pattern by covering, with a cover forming agent, a substrate including a photoresist pattern (mask pattern) in which pattern size can be well controlled, a fine pattern satisfying the excellent profile and requested chararacteristic for a semiconductor device can be obtained and moreover generation of particles which can result in contamination of device can be prevented. SOLUTION: The method of forming fine pattern comprises the steps of covering a substrate including the photoresist pattern with the cover forming agent for obtaining the fine pattern, removing unwanted cover forming agent adhered to the end edge portion and/or rear surface of the substrate, thermally contracting the cover forming agent with the heat treatment and narrowing the interval between photoresist patterns by utilizing the thermal contracting operation, and removing the cover forming agent. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004029248A Coating agent for making pattern fine, and method of forming fine pattern using the same 有权
公开(公告)号：JP2004029248A
公开(公告)日：2004-01-29
申请号：JP2002183541
申请日：2002-06-24
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SUGATA YOSHIKI , KANEKO FUMITAKE , TACHIKAWA TOSHIKAZU
IPC分类号： G03F7/11 , G03F7/004 , G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0046
摘要： PROBLEM TO BE SOLVED: To provide a coating agent with which micronized fine pattern wherein foams and defects are reduced and which has excellent leveling properties and coating properties, a proper profile and characteristics requested in the current semiconductor device can be obtained, and to provide a method of forming the micronized fine pattern using the coating agent, in formation of fine pattern using especially the coating agent.
SOLUTION: The coating agent for making pattern fine which is applied onto a substrate having a photoresist pattern and used for micronizing the fine pattern by utilizing a heat shrinkage function of the coating agent to narrow the spacing of the photoresist pattern is characterized by containing a water-soluble polymer and a water-soluble fluorine compound (fluoroalkyl alcohols, fluoroalkyl carboxylic acids, etc.). The method of forming the fine pattern using the coating agent is also provided.
COPYRIGHT: (C)2004,JPO

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