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    • 3. 发明专利
    • Apparatus and method for processing liquid
    • 用于处理液体的装置和方法
    • JP2011009300A
    • 2011-01-13
    • JP2009149033
    • 2009-06-23
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • MINAMI TERUOMIKAMIMURA FUMIHIROKOSAI KAZUKIYABUTA TAKASHIYOKOMIZO KENJIMIZOTA SHOGO
    • H01L21/306H01L21/027H01L21/304H01L21/768
    • H01L21/67051H01L21/6708
    • PROBLEM TO BE SOLVED: To provide a liquid processing apparatus or the like for removing a film from a surface of a substrate with the use of a new method.SOLUTION: In a liquid processing apparatus 3 for removing a first film and a second film from a substrate on which the second film is formed on the upper layer of the first film, a first chemical supply part 51 supplies the first chemical for dissolving the first film to the substrate W, a second chemical supply part 51 supplies a second chemical for reducing the strength of the second film, and a fluid supply part 52 serving also as an impact giving part gives a physical impact to the second film to break the second film and supplies a fluid for washing away fragments of the second film having been broken. A control unit 7 controls the respective parts such that, after the second chemical has been supplied and then the fluid has been supplied from the fluid supply part 52, the first chemical is supplied.
    • 要解决的问题:提供一种液体处理装置等,用于利用新的方法从基板的表面除去膜。解决方案:在用于从第一膜和第二膜移除的液体处理装置3中, 在第一膜的上层上形成有第二膜的基板,第一化学品供给部51将第一膜溶解的第一化学品供给到基板W,第二化学品供给部51供给用于还原的第二化学品 第二膜的强度以及也用作冲击赋予部的流体供给部52对第二膜产生物理冲击,从而破坏第二膜,并且供给用于洗涤已经破裂的第二膜的碎片的流体。 控制单元7控制各部分,使得在供应第二化学品之后,然后从流体供应部分52供应流体,供应第一化学品。
    • 4. 发明专利
    • Substrate processing apparatus and substrate processing method
    • 基板处理装置和基板处理方法
    • JP2014103297A
    • 2014-06-05
    • JP2012255056
    • 2012-11-21
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • KIYOSE HIROMIKAMIMURA FUMIHIROAZUMA AKIHIRO
    • H01L21/304
    • PROBLEM TO BE SOLVED: To accurately control a temperature of a process liquid for processing a substrate.SOLUTION: A substrate processing apparatus (1) of the invention processes a substrate (2) with a process liquid heated to a predetermined temperature and comprises: a container (a storage tank 8, a heating tank 22) which stores the process liquid; process liquid heating means (6) where a heater (34) is provided on a heating wall (33) formed at the container, the process liquid heating means (6) which heats the process liquid with the heater (34) through the heating wall (33); a temperature control sensor control (36) which is provided on the heating wall (33) and measures a temperature of the heating wall (33); and control means (7) which controls the process liquid heating means (6) on the basis of a temperature measured by the temperature control sensor (36). The control means (7) controls the process liquid heating means (6) on the basis of the temperature of the heating wall (33) measured by the temperature control sensor (36).
    • 要解决的问题:精确地控制用于处理基板的处理液的温度。解决方案:本发明的基板处理装置(1)用加热到预定温度的处理液处理基板(2),并包括: 储存处理液的容器(储罐8,加热槽22) 处理液体加热装置(6),其中加热器(34)设置在形成在容器上的加热壁(33)上,处理液体加热装置(6)通过加热壁(34)加热加工液 (33); 温度控制传感器控制器(36),设置在加热壁(33)上并测量加热壁(33)的温度; 以及基于由温度控制传感器(36)测量的温度来控制处理液体加热装置(6)的控制装置(7)。 控制装置(7)基于由温度控制传感器(36)测量的加热壁(33)的温度控制处理液体加热装置(6)。
    • 5. 发明专利
    • Substrate processing device, substrate processing method, and computer readable storage medium storing substrate processing program
    • 基板处理装置,基板处理方法和计算机可读存储介质存储基板处理程序
    • JP2013093478A
    • 2013-05-16
    • JP2011235563
    • 2011-10-27
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • TANAKA YUJIMOMOTAKE HIRONOBUUNO TAKASHIKAMIMURA FUMIHIRO
    • H01L21/306H01L21/304
    • PROBLEM TO BE SOLVED: To prevent an increase in treatment liquid concentration due to treatment liquid replenishment.SOLUTION: A substrate processing device (1) for adjusting treatment liquid concentration to saturation concentration at a preset temperature by boiling the treatment liquid obtained by diluting the chemical with a dilution liquid at the preset temperature and processing a substrate by immersing it in the treatment liquid comprises: a processing tank (2) for processing a substrate (10) with the treatment liquid; treatment liquid heating means (5) for heating the treatment liquid accumulated in the processing tank (2) to the preset temperature; treatment liquid discharge means (6) for discharging the treatment liquid from the processing tank (2); treatment liquid replenishment means (7) for replenishing the processing tank (2) with the treatment liquid; preset temperature changing means (8) for changing the preset temperature; and control means (9) for controlling the treatment liquid discharge means (6) and the treatment liquid replenishment means (7). The control means (9) controls the treatment liquid so that the treatment liquid discharge means (6) discharges a predetermined amount of the treatment liquid from the processing tank (2) and the treatment liquid replenishment means (7) replenishes the processing tank (2) with the treatment liquid of saturation concentration at the preset temperature changed by the preset temperature changing means (8).
    • 要解决的问题:为了防止由于处理液体补充而导致的处理液浓度的增加。 解决方案:一种基板处理装置(1),用于通过将通过在预设温度下稀释化学品而获得的处理液通过将处理液浓度浸入其中的浓度来调节处理液浓度至饱和浓度 处理液包括:用处理液处理基板(10)的处理槽(2); 处理液加热装置(5),用于将积存在处理罐(2)中的处理液体加热到预设温度; 处理液排出装置(6),用于从处理罐(2)排出处理液; 处理液补充装置(7),用于用处理液补充处理罐(2); 用于改变预置温度的预置温度改变装置(8) 以及用于控制处理液排出装置(6)和处理液补充装置(7)的控制装置(9)。 控制装置(9)控制处理液,使得处理液排出装置(6)从处理罐(2)排放预定量的处理液,并且处理液补充装置(7)补充处理槽(2) ),预置温度改变装置(8)改变了预设温度下的饱和浓度处理液。 版权所有(C)2013,JPO&INPIT