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1. 发明专利

JP2012201551A Silicon crystal, method for producing silicon crystal, and method for producing silicon polycrystal ingot 有权
标题翻译：硅晶体，生产硅晶体的方法和生产硅多晶硅的方法
公开(公告)号：JP2012201551A
公开(公告)日：2012-10-22
申请号：JP2011067402
申请日：2011-03-25
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： UDA SATOSHI , MUKANNAN ARIVANANDHAN , GOTO YORIYOSHI , FUJIWARA KOZO , HAYAKAWA YASUHIRO
IPC分类号： C30B29/06 , C30B15/04
摘要： PROBLEM TO BE SOLVED: To provide a high-quality silicon crystal which is small in variation in resistivity in an Si crystal ingot, also small in void-defect density in the Si crystal, and prevented from deterioration in crystal quality under light radiation; and to provide a method for producing a silicon crystal and a method for producing a silicon polycrystal ingot.SOLUTION: The silicon crystal includes boron (B) and germanium (Ge) as dope elements. In this case, the concentration of the boron is in a range of at least 2×10atoms/cmand at most 3×10atoms/cm, and the concentration of the germanium which is simultaneously added is in a range of at least 1×10atoms/cmand at most 3×10atoms/cm. The crystal to which B and Ge are added is smaller in the density of FPD (Flow Pattern Defect) than a crystal to which only B is added.
摘要翻译：要解决的问题：为了提供Si晶体中电阻率变化小的高品质硅晶体，Si晶体的空隙缺陷密度也小，并且防止了光下晶体质量的劣化辐射; 并提供一种硅晶体的制造方法以及多晶硅硅锭的制造方法。解决方案：硅晶体包括作为掺杂元素的硼（B）和锗（Ge）。在这种情况下，硼的浓度在至少2×10 -6原子/ cm 3的范围内，并且在最多3×10 18 atoms / cm 3 ，并且同时添加的锗的浓度在至少1×10 15 atoms / cm 3 ，最多3×10 20 < SP> atoms / cm 3 。添加B和Ge的晶体的FPD（流动模式缺陷）的密度比仅添加B的晶体小。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010217089A Monochrome condenser for neutron beam 有权
标题翻译：用于中子束的单色凝结器
公开(公告)号：JP2010217089A
公开(公告)日：2010-09-30
申请号：JP2009066185
申请日：2009-03-18
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： HIRAGA HARUHIRO , YAMADA KAZUYOSHI , FUJIWARA KOZO , NAKAJIMA KAZUO
IPC分类号： G21K1/06 , G21K1/00 , H01L31/09
摘要： PROBLEM TO BE SOLVED: To provide a monochrome condenser for a neutron beam which can eliminate the defect of the difficulty in curved surface control based on conventional mechanical methods, enables point light-gathering in mm size and can generate high-intensity neutron beams at low costs. SOLUTION: The condenser is formed by curving work applied to a bulk wafer of semiconducting crystals of Si, Ge or SiGe through a high-temperature pressurizing work method in a temperature range which has a plastic deformation capacity enabling an arbitrary plastic deformation of the semiconducting crystals. The condenser is used as a monochrometer or an analyzer for a neutron beam which can monochromatize it and heighten the intensity of it at the same time. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供中子束的单色冷凝器，其可以消除基于常规机械方法的曲面控制难度的缺陷，使得能够以mm尺寸聚光，并且可以产生高强度中子梁以低成本。解决方案：通过在具有塑性变形能力使其能够任意塑性变形的温度范围内通过高温加压工作方法弯曲施加到Si，Ge或SiGe的半导体晶体的体晶片上的工作而形成冷凝器半导体晶体。冷凝器用作单色仪或中子束分析仪，可以对其进行单色化，同时提高其强度。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2005272230A Method and apparatus for growing crystal 审中-公开
标题翻译：用于生长晶体的方法和装置
公开(公告)号：JP2005272230A
公开(公告)日：2005-10-06
申请号：JP2004089326
申请日：2004-03-25
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： FUJIWARA KOZO , NAKAJIMA KAZUO , UJIHARA TORU , USAMI NORITAKA
IPC分类号： C30B11/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a new method and an apparatus for growing a crystal, by which crystals of various materials can be manufactured at a low cost and the orientation of the crystals can be aligned in a prescribed direction.
SOLUTION: The wall surface 111A of the tip end part 111 of a crucible 11, from where crystal growth is started is inclined. Then, supercooling is performed when crystal growth is carried out, and the tip end part 111 of the crucible 11 is forcedly cooled.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于生长晶体的新方法和装置，由此可以以低成本制造各种材料的晶体，并且晶体的取向可以沿规定的方向排列。解决方案：晶体生长开始的坩埚11的前端部111的壁面111A倾斜。然后，当进行晶体生长时进行过冷却，坩埚11的前端部111被强制冷却。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005119900A Crystal growth method, bulk pre-crystal for growing bulk single crystal and preparation method of the bulk pre-crystal 有权
标题翻译：晶体生长方法，用于生长块状单晶的块状预晶体和大块预晶体的制备方法
公开(公告)号：JP2005119900A
公开(公告)日：2005-05-12
申请号：JP2003355443
申请日：2003-10-15
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： NAKAJIMA KAZUO , AZUMA YUKINAGA , USAMI NORITAKA , FUJIWARA KOZO , UJIHARA TORU
IPC分类号： C01G17/00 , C01G28/00 , C30B11/00 , C30B29/42
摘要： PROBLEM TO BE SOLVED: To prepare a high-quality bulk single crystal by suppressing the generation and expansion of crystal grains which are not derived from seed crystals.
SOLUTION: Crystal growth is performed using several crystal pieces as first seed crystals to grow bulk pre-crystals having multiple crystal faces of different orientations. Subsequently, the crystal face with the largest rate of area increase in the bulk pre-crystals is determined and selected as a preferential face. Then, a single crystal having the preferential face as a growth face is prepared and used as a second seed crystal for crystal growth to obtain the bulk single crystal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：通过抑制不是由晶种衍生的晶粒的产生和膨胀来制备高质量的单体单晶。解决方案：使用多个晶体片作为第一晶种进行晶体生长，以生长具有不同取向的多个晶面的大块预制晶体。随后，确定并选择体积预晶体中面积增加最大的晶面作为优选面。然后，制备具有作为生长面的优选面的单晶，并将其用作晶体生长的第二晶种，以获得块体单晶。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005072192A Photovoltaic device, solar cell, and method of manufacturing the device 有权
标题翻译：光电器件，太阳能电池及其制造方法
公开(公告)号：JP2005072192A
公开(公告)日：2005-03-17
申请号：JP2003298784
申请日：2003-08-22
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： USAMI NORITAKA , NAKAJIMA KAZUO , UJIHARA TORU , FUJIWARA KOZO
IPC分类号： H01L31/04 , H01L21/203
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a new photovoltaic device which is capable of generating an electromotive force with high efficiency utilizing a wide range of light spectrums. SOLUTION: A p-type semiconductor substrate 11 is prepared, and an n-type semiconductor layer 12 is formed in face to face with the p-type semiconductor substrate 11. Then, an intrinsic layer 13 equipped with a plurality of islands 13A stacked up in the direction of thickness is arranged on a plane between the p-type semiconductor substrate 11 and the n-type semiconductor layer 12. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种新的光电器件，其能够利用宽范围的光谱产生高效率的电动势。解决方案：制备p型半导体衬底11，并且与p型半导体衬底11面对面地形成n型半导体层12.然后，配备有多个岛的本征层13 在p型半导体衬底11和n型半导体层12之间的平面上布置有沿厚度方向堆叠的13A。（C）2005，JPO＆NCIPI

6. 发明专利

JP2009040641A Si BULK POLYCRYSTALLINE INGOT 审中-公开
公开(公告)号：JP2009040641A
公开(公告)日：2009-02-26
申请号：JP2007208755
申请日：2007-08-10
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： FUJIWARA KOZO , NAKAJIMA KAZUO , USAMI NORITAKA
IPC分类号： C01B33/02 , C30B28/06 , C30B29/06 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality and high-homogeneity Si bulk polycrystalline ingot having good crystal quality even in an upper part of the ingot, with respect to an Si bulk polycrystalline ingot produced by a cast growth method using unidirectional growth. SOLUTION: An Si bulk polycrystalline ingot is produced by the cast growth method so that the proportion of random grain boundaries near the bottom of the ingot formed in the early stage of growth is made ≤30% of all grain boundaries. By the invention, even in an upper part of the ingot where solar cell properties deteriorate usually, solar cell properties do not deteriorate and the utilization yield of the Si bulk polycrystalline ingot can be increased. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：为了获得即使在锭的上部也具有良好的晶体质量的高品质和高均匀度的Si大块多晶锭，相对于通过铸造生长方法生产的Si本体多晶锭，使用单向增长解决方案：通过铸造生长法制造Si大块多晶锭，使得在生长初期形成的锭底部附近的随机晶界的比例成为所有晶界的±30％。通过本发明，即使在太阳能电池性质通常劣化的锭的上部，也不会劣化太阳能电池的性质，并且可以提高Si本体多晶锭的利用率。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007022815A METHOD FOR GROWING Si-BASED CRYSTAL, Si-BASED CRYSTAL, Si-BASED CRYSTAL SUBSTRATE AND SOLAR BATTERY 有权
标题翻译：用于生长Si基晶体，Si基晶体，Si基晶体基板和太阳能电池的方法
公开(公告)号：JP2007022815A
公开(公告)日：2007-02-01
申请号：JP2003198490
申请日：2003-07-17
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： NAKAJIMA KAZUO , FUJIWARA KOZO , USAMI NORITAKA , UJIHARA TORU , AZUMA YUKINAGA
IPC分类号： C30B29/52 , C30B11/00 , C30B11/10 , C30B29/06 , H01L31/04
CPC分类号： C30B29/06 , C30B11/00 , Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a method for growing an Si-based crystal using the casting method where the crystal orientation of the Si-based crystal can be arbitrarily controlled, where a wafer obtained by cutting the Si-based crystal has a texture structure having a uniform shape orientation after specified etching and where a structure having a uniform shape orientation is simply and easily formed in the Si-based crystal. SOLUTION: A crystal piece containing at least Si is placed on the bottom portion of a crucible 11 for growing a cast. An Si raw material is placed above the crystal piece in the crucible 11. An Si melt 14 is formed by that the Si raw material is melted so that at least a part of the crystal piece remains to be unmelted in the heated crucible 11. The Si-based crystal is grown to one direction from the residual portion 12A of the crystal piece by cooling and solidifying the Si melt 14. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用其中可以任意控制Si基晶体的晶体取向的铸造方法生长Si基晶体的方法，其中通过切割Si基晶体获得的晶片具有在特定蚀刻后具有均匀形状取向的纹理结构，并且其中在Si基晶体中简单且容易地形成具有均匀形状取向的结构。解决方案：将含有至少Si的晶体片放置在用于生长铸件的坩埚11的底部上。将Si原料放置在坩埚11中的结晶片的上方。Si熔体14通过Si原料熔化而形成，使得至少一部分结晶片在加热的坩埚11中保持不熔化。通过冷却和固化Si熔融物14，从晶体的残留部分12A将Si基晶体生长到一个方向。（C）2007，JPO＆INPIT

8. 发明专利

JP2005035817A Ge CRYSTAL GROWTH METHOD, Ge CRYSTAL, Ge CRYSTAL SUBSTRATE, AND SOLAR BATTERY 有权
标题翻译： Ge晶体生长法，Ge晶体，Ge晶体基板和太阳能电池
公开(公告)号：JP2005035817A
公开(公告)日：2005-02-10
申请号：JP2003198417
申请日：2003-07-17
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： NAKAJIMA KAZUO , FUJIWARA KOZO , USAMI NORITAKA , UJIHARA TORU , AZUMA YUKINAGA
IPC分类号： C30B29/52 , C30B11/10 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a Ge crystal growth method using a cast process, wherein the crystal orientation of the Ge crystal can be freely controlled, and a textured structure uniform in shape and orientation is easily formed within the Ge crystal so that a wafer cut from the Ge crystal may have a textured structure uniform in shape and orientation after it is subjected to a specified etching operation. SOLUTION: A crystal piece containing at least Ge is set on the bottom of a crucible 11 for cast growth. A raw material containing at least Ge is set over the crystal piece in the crucible 11. The raw material is molten by heating the crucible 11 in a manner that at least part of the crystal piece remains unmolten to form a melt 14. A Ge crystal is unidirectionally grown from the remainder 12A of the crystal piece by cooling and freezing the melt 14. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用铸造工艺的Ge晶体生长方法，其中可以自由地控制Ge晶体的晶体取向，并且容易在Ge晶体内形成具有均匀的形状和取向的纹理结构，因此从Ge晶体切割的晶片在进行特定的蚀刻操作之后，可以具有在形状和取向上均匀的纹理结构。解决方案：至少含有Ge的晶体片设置在用于铸造生长的坩埚11的底部。将含有至少Ge的原料放置在坩埚11中的晶片上。原料通过以至少部分结晶片保持不熔而形成熔体14的方式加热坩埚11来熔融.Ge晶体通过冷却和冷冻熔体14从晶片的其余部分12A单向生长。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2014205598A Ｓｉ多結晶インゴットの製造方法およびＳｉ多結晶インゴット有权
标题翻译：生产Si多晶硅的方法，以及Si多晶硅
公开(公告)号：JP2014205598A
公开(公告)日：2014-10-30
申请号：JP2013085169
申请日：2013-04-15
申请人：国立大学法人東北大学 , Tohoku Univ
发明人： FUJIWARA KOZO
IPC分类号： C01B33/02 , C30B29/06 , H01L31/04
CPC分类号： Y02E10/546
摘要：【課題】太陽電池用のSi多結晶インゴットの高品質化のためには、不純物の局所偏析を抑制する手法の開発が不可欠であり、本発明は、Si多結晶インゴット中に不純物の局所偏析がない高品質なSi多結晶インゴットの製造方法およびSi多結晶インゴットを提供する。【解決手段】Si多結晶インゴットの一方向凝固過程において、固液界面における結晶粒界部分の形状を平坦な形状に維持したまま結晶成長を行うことを特徴とする。【選択図】図1
摘要翻译：要解决的问题：开发一种抑制杂质的局部偏析以提高太阳能电池的Si多晶锭的质量的方法，并且提供一种制造高质量的不存在杂质的局部偏析的Si多晶锭的方法其中，Si多晶锭.SSi多晶锭的单向凝固，其特征在于，在固液界面中的晶界部分的形状被保持为的状态下进行晶体生长平坦的形状。

10. 发明专利

JP2013088622A Method for producing paraelectric periodic twin-crystal 有权
标题翻译：用于生产参数周期性双晶的方法
公开(公告)号：JP2013088622A
公开(公告)日：2013-05-13
申请号：JP2011229125
申请日：2011-10-18
申请人： Tohoku Univ , 国立大学法人東北大学
发明人： MAEDA KENSAKU , UDA SATOSHI , FUJIWARA KOZO
IPC分类号： G02F1/37
摘要： PROBLEM TO BE SOLVED: To provide a method for producing paraelectric periodic twin-crystals enabling quasi phase matching in which signs of a nonlinear optical constant are periodically inverted, in a borate-based crystal as paraelectrics.SOLUTION: The method for producing paraelectric periodic twin-crystals forms a periodic twin-crystal structure by periodically moving a partially molten area of a crystal having a single twin interface. Further, the method for producing paraelectric periodic twin-crystals includes a step of producing bulk periodic twin-crystal structure using the periodic twin-crystal as a seed crystal.

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