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1. 发明专利

JP2011117652A heating furnace 有权
标题翻译：加热炉
公开(公告)号：JP2011117652A
公开(公告)日：2011-06-16
申请号：JP2009274570
申请日：2009-12-02
申请人： Tdk Corp , Tdk株式会社
发明人： WATANABE HIDEAKI , AKIMOTO KATSUMI , KAMIYA SOHIRO , KATAYASU TAKUO , ITO TAKESHI , OMORI MIKIO
IPC分类号： F27D7/04 , F27B17/00
摘要： PROBLEM TO BE SOLVED: To provide a heating furnace uniformizing temperature distribution in a heat treatment space at each stage within a heat treatment chamber. SOLUTION: The heating furnace 1 includes: a hot air circulation flow passage 30 making hot air circulate and flow; and the heat treatment chamber 10 arranged immediately above a heater 21 and a blower 23 and making the hot air in the hot air circulation flow passage 30 branch to and pass through the heat treatment spaces 13a-13e at the respective stages. The upstream side of the heat treatment space 13a-13e at each stage includes: a bent thermal loss control plate 51a-51e projecting longer to the upstream side as a distance from the heater 21 increases; first and second mesh materials 53, 55 through which the hot air introduced to the heat treatment space 13a-13e is made to pass sequentially; and a heat distribution control plate 57 provided between the first and second mesh materials 53, 55 and controlling heat distribution in the horizontal direction of the heat treatment space 13a-13e. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在热处理室内的各阶段的热处理空间中均匀化温度分布的加热炉。解决方案：加热炉1包括：使热空气循环和流动的热空气循环流动通道30; 在加热器21的正上方配置的热处理室10和鼓风机23，使热空气循环流路30内的热空气分支并通过各处的热处理空间13a〜13e。在各处的热处理空间13a-13e的上游侧包括：与加热器21的距离越靠近上游侧突出的弯曲的热损失控制板51a〜51e越大; 使引入热处理空间13a-13e的热空气依次通过的第一和第二网眼材料53,55; 以及设置在第一和第二网眼材料53,55之间并控制热处理空间13a-13e的水平方向上的热分布的热分布控制板57。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JPH11296814A THIN FILM MAGNETIC HEAD 失效
公开(公告)号：JPH11296814A
公开(公告)日：1999-10-29
申请号：JP11622698
申请日：1998-04-10
申请人： TDK CORP
发明人： AOYAMA TSUTOMU , OMORI MIKIO
IPC分类号： G11B5/31 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To reduce NLTS at the time of recording with a high frequency by allowing the coil of a recording inductive head to have two layers and electrically connecting one inner peripheral tip parts of two coils to the other outer peripheral tip parts so as to reduce impedance. SOLUTION: The coil 13 has a two-layer structure provided with first and second coils 13a and 13b, a non-magnetic insulated body exists between an upper and lower magnetic poles and a non-magnetic insulated body is interposed also between both of the coils. Consequently, relating to the first coil 13a, a coil leader 21a is connected to its outer tip and relating to the second coil 13b on the other hand, a coil leader 21ba is connected to its inner tip. In this two-layer structure coil, a potential difference between upper/lower coils is small and almost the same at any peripheral part of the coil, thereby capacitance at the whole coil is reduced.

3. 发明专利

JP2001093117A THIN FILM MAGNETIC HEAD, MAGNETIC HEAD DEVICE AND MAGNETIC DISK DEVICE 失效
公开(公告)号：JP2001093117A
公开(公告)日：2001-04-06
申请号：JP2000166623
申请日：2000-06-02
申请人： TDK CORP
发明人： YAMANAKA NOBORU , OMORI MIKIO , SUZUKI YOICHI , NOMURA IZUMI
IPC分类号： G11B5/31 , G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a thin film magnetic head capable of suppressing the swelling of an ABS side by thermal expansion at the time of recording. SOLUTION: An insulation film 25 fills an inner gap between first and second magnetic films 21 and 22 and the second magnetic film 22 is formed on a surface. A coil film 23 is buried inside the insulation film 25 and a protective film 26 covers the entire induction type electromagnetic conversion element. At the time of defining the minimum film thickness of the protective film 26 viewed on the surface of the second magnetic film 22 as A and the maximum film thickness of the insulation film 25 viewed inside the inner gap as B, 1

4. 发明专利

JPH06177051A CVD DEVICE 失效
公开(公告)号：JPH06177051A
公开(公告)日：1994-06-24
申请号：JP33053392
申请日：1992-12-10
申请人： TDK CORP
发明人： MOROOKA HISAO , YOKOTA HIDEAKI , SUZUKI YOICHI , OMORI MIKIO
IPC分类号： G01R33/64 , G01N24/14 , H01L21/205 , H01L21/31
摘要： PURPOSE:To reduce ion damage effectively and to form a film widely and uniformly by laying out a CVD device so that the strength of the magnetic field directly above a substrate is high and is reduced away from the substrate and then controlling it so that the influence due to collision of a charged particle can be avoided for a film-formed object directly above the substrate. CONSTITUTION:Electromagnets 41a and 41b for increasing the strength of the magnetic field directly above a substrate and for decreasing it away from the substrate are laid out to reduce the speed of an ion moving toward the substrate in the direction of the substrate. Since the speed of the ion entering the substrate differs due to operation pressure, optimum conditions are set by changing the current flowing to the electromagnets 41a and 41b and the position of a substrate 5. Normally, the strength of the magnetic field near the surface of the substrate is approximately 0.2-3.0 KGauss. By using the electromagnets 41a and 41b in a pair, the direction of the magnetic field near the substrate can be aligned nearly vertically for the substrate, thus obtaining uniform crystallizability over a wide area.

5. 发明专利

JPH06177050A CVD DEVICE 失效
公开(公告)号：JPH06177050A
公开(公告)日：1994-06-24
申请号：JP33053292
申请日：1992-12-10
申请人： TDK CORP
发明人： MOROOKA HISAO , YOKOTA HIDEAKI , SUZUKI YOICHI , OMORI MIKIO
IPC分类号： G01R33/64 , G01N24/14 , H01L21/205 , H01L21/31
摘要： PURPOSE:To reduce ion damage effectively and to enable a film to have a larger area and to be formed uniformly by laying out a CVD device so that the strength of magnetic field directly above the substrate which is installed in a treatment chamber is high and is reduced away from the substrate and then fully decelerating the speed of a charged particle in the direction of the substrate. CONSTITUTION:An electromagnet 41 for increasing the strength of the magnetic field directly above a substrate and for decreasing it away from the substrate is laid out to reduce the speed of an ion moving toward the substrate in the direction of the substrate. Since the speed of the ion entering the substrate differs depending on operation pressure, optimum conditions are set by changing the current flowing to the electromagnet 41 and the position of a substrate 6. Normally, the strength of magnetic field near the surface of the substrate 6 is approximately 0.2-3.0 Gauss. By using electromagnets 41a and 41b in a pair, the direction of the magnetic field near the substrate 6 can be aligned nearly at right angle to the substrate but a thin film with uniform crystallizability over a wide area can be obtained.

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