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1. 发明专利

JP2003188141A WAFER THINNING TECHNIQUE 审中-公开
公开(公告)号：JP2003188141A
公开(公告)日：2003-07-04
申请号：JP2002296894
申请日：2002-10-10
申请人： TRW INC
发明人： LAI RICHARD , HARVEY N ROGERS , CHEN YAOCHUNG , BARSKY MICHAEL E
IPC分类号： H01L21/306 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide a technique for simultaneously thinning semiconductor wafers. SOLUTION: With respect to the devices (10, 100) for simultaneously thinning the rear faces of several semiconductor wafers (W) by using a noncrystalline uniform etching process and a method by using them, the devices (10, 100) include fixing jigs (12,102) having several horizontal receptacles (14, 16, 18, 20, 104, 106, 108 and 110) for housing the semiconductor wafers (W). The loaded fixing jigs (12,102) are impregnated with etching solution (36, 146) which can remove semiconductor material layers in an isotropic manner from the rear faces of the semiconductor wafers (W). The etching solution (36, 146) is preferably heated to about 40-50°C and is constantly agitated by magnetic stirrer bars (48, 158). After a sufficient time has passed, the thinned semiconductor wafers (W) are taken out from the etching solution (36, 146). The devices (10, 100) can simultaneously thin several semiconductor wafers (W) to the final thickness of about 25 μm. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2000127100A MICRO WORKING METHOD FOR WAFER 失效
公开(公告)号：JP2000127100A
公开(公告)日：2000-05-09
申请号：JP24984799
申请日：1999-09-03
申请人： TRW INC
发明人： EDWIN W SABIN , HARVEY N ROGERS , VLADIMIR MEDVEDEV
IPC分类号： B81C1/00 , G03F7/004 , G03F7/26 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform micro working for wafer by using photoresist materials by subsequently exposing wafer on which the photoresist materials are laminated to an energy source, developing the photoresist materials and performing dry etching for the laminated wafer. SOLUTION: Wafer is effectively washed and subsequently a laminating processing is performed for wafer by using a normal laminating technique. Subsequently, the laminated body is exposed to an energy source and a bridging action is performed after this exposition and before development. After the laminating processing, wafer is developed, an etching processing is received and photoresist is peeled. By using dry film photoresist, etching processings can be performed for the surface of wafer two times or more numbers of times before the next process. In each etching process, different depths can be made or large different etching area can be made.

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