专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09199423A MANUFACTURE OF SILICON THIN FILM 失效
公开(公告)号：JPH09199423A
公开(公告)日：1997-07-31
申请号：JP864496
申请日：1996-01-22
申请人： TOYOTA MOTOR CORP , HANABUSA MITSUGI
发明人： NAKAMURA NAOKI , HASEGAWA HIROSHI , HANABUSA MITSUGI
IPC分类号： B23K26/00 , C23C14/28 , H01L21/20 , H01L21/203 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To manufacture a high-quality silicon thin film by effectively removing residual oxygen in a processing atmosphere in a laser ablation method. SOLUTION: In a vacuum chamber 4, laser beam 1 is cast on a silicon target 8 and the material of the target 8 is emitted by the energy of the laser beam 1 and is deposited on a substrate 5 to form a silicon thin film 5. In this case, the inside of the vacuum chamber 1 is set to a silane gas atmosphere or a mixed gas atmosphere of silane gas and hydrogen gas.

2. 发明专利

JPH09195044A FORMATION OF THIN FILM 失效
公开(公告)号：JPH09195044A
公开(公告)日：1997-07-29
申请号：JP861996
申请日：1996-01-22
申请人： TOYOTA MOTOR CORP , HANABUSA MITSUGI
发明人： NAKAMURA NAOKI , HASEGAWA HIROSHI , HANABUSA MITSUGI
IPC分类号： C23C14/46 , C23C14/22 , C23C14/28 , H01L21/203 , H01L21/268 , H01L21/314
摘要： PROBLEM TO BE SOLVED: To effectively remove particles in an emitting material and residual oxygen in a high vacuum and to form a thin film of good quality, at the time of forming a thin film by a laser abrasion method, by irradiating the surface of a substrate and a plume composed of an emitting material with an ion beam. SOLUTION: In a vacuum chamber 4, a target 8 is irradiated with a pulse laser beam 1, and an emitting material observed as a plume 12 from the target 8 is accumulated on the surface of the target 8 to form a thin film. At this time, at least either the surface of the substrate 5 or the plume 12 is irradiated with an ion beam 11 from an ion source 10. Thus, the intrusion of particles and oxygen can be prevented, furthermore, by directly irradiating the substrate 5 with the ion beam 11, the Si-Si bond in the formed silicon thin film is made firm, so that the dense thin film can be obtd. to improve the optical and electronic characteristics of the thin film.

3. 发明专利

JPH08259388A PRODUCTION OF DIAMOND-LIKE CARBON THIN FILM 失效
公开(公告)号：JPH08259388A
公开(公告)日：1996-10-08
申请号：JP8447295
申请日：1995-03-17
申请人： TOYOTA MOTOR CORP , HANABUSA MITSUGI
发明人： NAKAMURA NAOKI , HASEGAWA HIROSHI , HANABUSA MITSUGI
IPC分类号： C30B23/08 , C23C14/06 , C30B29/04
摘要： PURPOSE: To obtain a pure carbon thin film without migration of carbon particles by irradiating a target obtained by cooling and solidifying a carbon compound in a gaseous or a liquid at normal temperature with a laser beam, ionizing carbon by decomposing the carbon state compound and fixing.crystallizing on a substrate. CONSTITUTION: A carbon compound, e.g. acetylene is immediately gasified by irradiation with a laser beam and ionized, and the result, migration of carbon particles are prevented without scattering of carbon particles on a substrate such as the case of using usual carbon plate. A liquid nitrogen supplying part 7, an acetylene gas supplying part 8 and a substrate holder 5 are placed in a vacuum chamber 6 and the acetylene gas is cooled and solidified by liquid nitrogen. A heater 9 is included in the substrate holder 5 and controls the temperature of a substrate 4 (e.g. synthesized quartz). A laser beam 1 (e.g. ArF excimer laser beam) is converged by a lens 2 and cast on the surface of the acetylene 3. Owing to this process, carbon atom is ionized and collides with the substrate 4, and forms the carbon thin film on the surface of the substrate 4.

4. 发明专利

JPS57160119A MANUFACTURE OF AMORPHOUS SILICON FILM BY REACTIVE LASER SPUTTERING 失效
公开(公告)号：JPS57160119A
公开(公告)日：1982-10-02
申请号：JP4472181
申请日：1981-03-28
申请人： HANABUSA MITSUGI
发明人： HANABUSA MITSUGI , SUZUKI MASAO
IPC分类号： H01L21/203 , C23C14/28 , H01L21/205
摘要： PURPOSE:To perform an evaporation deposition of amorphous silicon mixed with gas element at a high speed by a method wherein a laser beams having a short pulse width is repeatedly irradiated to the surface of silicon material placed in a required gas atmosphere. CONSTITUTION:A silicon material 5 and a vapor deposited substrate 10 are arranged in the interior of reactor tube 4 and the gases such as hydrogen, oxygen or the like are introduced into the reactor 4 at a predetermined pressure. A laser beam 2 having a pulse width shorter than laser 1 is introduced to the reactor 4 through a window 3, the silicon material 5 is exposed to irradiation of the laser rays and the surface thereof is heated. A silicon vapor is generated through this heating from the silicon material 5 to form an amorphous silicon film 10 containing the gas element on a substrate 10. The thickness of the silicon film 11 can be regulated by controlling the pulse width of the laser beam 2 or a repetition period or the like.

5. 发明专利

JPS6381812A DEVICE FOR FORMING THIN FILM USING NOZZLE MOLECULAR BEAM 失效
公开(公告)号：JPS6381812A
公开(公告)日：1988-04-12
申请号：JP22641086
申请日：1986-09-25
申请人： TOYOTA MOTOR CORP
发明人： IGUCHI SATORU , FURUNO SHIGEO , HANABUSA MITSUGI
IPC分类号： H01L31/04 , C23C16/24 , C23C16/48 , G03G5/08 , H01L21/205
摘要： PURPOSE:To easily replace material gas, to increase film-forming speed and to easily obtain the thin film having excellent film quality by a method wherein a plurality of nozzles, from which the gas containing thin film forming material in the state of molecular beam will be spouted out to a heated up substrate, are provided. CONSTITUTION:Three nozzles 2 are arranged on the same circular arc in a vacuum chamber 1 at the same intervals. Also, on the position opposing to the nozzles 2, the substrate holder 4 on which a glass substrate 3 will be placed is provided on a pedestal 6 in such a manner that the substrate holer 4 is supported by a supporting pole 5 and rotated concentrically with the circular arc. Also, a circular tungsten heater 10 is supported by the supporting pole 5 in such a manner that the molecular beam 9, emitted from the nozzle 2, is surrounded by the heater 10. Using the above-mentioned device, N-type amorphous silicon is deposited using the molecular beam of phosphine gas and monosilane gas. Then, i-type amorphous silicon is deposited using the molecular beam of monosilane gas, and then a solar battery is formed by depositing P-type amorphous silicon using diborane gas and monosilane gas.

6. 发明专利

JPS6381811A FORMATION OF THIN FILM USING NOZZLE MOLECULAR BEAM 失效
公开(公告)号：JPS6381811A
公开(公告)日：1988-04-12
申请号：JP22640986
申请日：1986-09-25
申请人： TOYOTA MOTOR CORP
发明人： IGUCHI SATORU , FURUNO SHIGEO , HANABUSA MITSUGI
IPC分类号： C23C16/04 , C23C16/24 , C23C16/48 , G03G5/08 , H01L21/205 , H01L21/263
摘要： PURPOSE:To increase film-forming speed as well as to obtain a thin film of good quality by a method wherein the gas, containing film forming material, is spouted out into vacuum atmosphere toward a substrate in the state of molecular beam through a nozzle, an electron beam is made to irradiate thereon, and the prescribed pattern is drawn on the substrate. CONSTITUTION:A glass substrate 3 is horizontally arranged in a vacuum chamber 1, and a nozzle 2 is arranged above the substrate 3 in such a manner that it will be spouting in vertical direction. Then, the monosilane gas diluted by hellium is supplied from a cylinder 5. Also, an electron gun 9 is arranged on the side of the nozzle 2, and its beam is brought in the state wherein it is possible to change its scanning direction using a deflecting coil 10. The width of pattern can be reduced to about 0.05 mum by focussing the electron beam. Also, by changing the energy of the electron beam, a polycrystalline or single crystal thin film can be obtained. An amorphous silicon thin film of the prescribed pattern can be formed in a short period of time using the above- mentioned device.

7. 发明专利

JPS6381810A FORMATION OF THIN FILM USING NOZZLE MOLECULAR BEAM 失效
公开(公告)号：JPS6381810A
公开(公告)日：1988-04-12
申请号：JP22640886
申请日：1986-09-25
申请人： TOYOTA MOTOR CORP
发明人： FURUNO SHIGEO , IGUCHI SATORU , HANABUSA MITSUGI
IPC分类号： H01L31/04 , C23C16/24 , C23C16/48 , G03G5/08 , H01L21/205
摘要： PURPOSE:To contrive improvement in film forming speed by a method wherein the gas, containing thin film forming material, is spouted out in the state of molecular beam through the intermediary of a nozzle, and the gas is allowed to reach a substrate by directly applying an electric field between a heater and the substrate while the gas is being heated. CONSTITUTION:A nozzle 2 is arranged above a glass substrate 3 in the vacuum chamber 1 which is brought in the state of high vacuum atmosphere of 0.1 Torr or thereabout using a vacuum pump 11, and the monosilane gas diluted by hellium is supplied from a cylinder 5. Also, a tungsten heater 9 is arranged at a point almost in the middle of the nozzle 2 and the substrate 3, and the temperature of the gas is adjusted to 1800 deg.C or thereabout. Also, DC 150V is applied between the stand 4, whereon the substrate is placed, and the heater 9 with the stand 4 side as positive pole. Besides, the substrate 3 is heated up to about 250 deg.C using the heater 14 arranged on the back side of the substrate 3. By using the above-mentioned device, amorphous silicon thin film can be formed at low cost. Also, a polycrystalline or single crystal thin film can be obtained by controlling the temperature of the substrate 3.

8. 发明专利

JPS6381809A FORMATION OF THIN FILM USING NOZZLE MOLECULAR BEAM 失效
公开(公告)号：JPS6381809A
公开(公告)日：1988-04-12
申请号：JP22640786
申请日：1986-09-25
申请人： TOYOTA MOTOR CORP
发明人： FURUNO SHIGEO , IGUCHI SATORU , HANABUSA MITSUGI
IPC分类号： H01L31/04 , C23C16/24 , C23C16/48 , G03G5/08 , H01L21/205
摘要： PURPOSE:To suppress the generation of secondary reaction of material gas and to obtain the thin film of good quality by a method wherein the gas containing thin film forming material is spouted out into a vacuum atmosphere in such a manner that the gas will be brought into the state of molecular beam through the intermediary of a nozzle, and the gas is allowed to reach a substrate while it is being heated from all directions. CONSTITUTION:A glass substrate 3 is arranged horizontally in a vacuum chamber 1 which is brought into a high vacuum state of 0.1 Torr or thereabout using a vacuum pump 11. A nozzle 2 is arranged above the substrate 3, and the monosilane gas diluted by hellium is supplied from a cylinder 5. A tungsten beater 9 is arranged almost in the middle of the nozzle 2 and the substrate 3, and the temperature of the monosilane gas is adjusted to 1800 deg.C or thereabout. Besides, the substrate 3 is heated up to 250 deg.C or thereabout using a heater 12. An amorphous silicon thin film can be formed at low cost using the above- mentioned device. Also, a polycrystalline or single crystal thin film can be obtained by controlling the temperature of the substrate 3.

9. 发明专利

JPH10209048A METHOD FOR FORMING SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH10209048A
公开(公告)日：1998-08-07
申请号：JP659197
申请日：1997-01-17
申请人： TOYOTA MOTOR CORP
发明人： NAKAMURA NAOKI , HASEGAWA HIROSHI , HANABUSA MITSUGI
IPC分类号： C23C14/28 , H01L21/203 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To form a shallow semiconductor thin film constituting the doped layer of high density, which is adapted to the solar battery of high efficiency, by irradiating a semiconductor target and a target containing dopant with laser beams. SOLUTION: In a target 8, the Si target and the target containing P are arranged. The target containing P, which is generated by P3 N5 , P2 AN3 , PN and P single body, is used for the target as the supply source of P being n- dopant. When the Si target and the target containing P are irradiated with laser beams 1, Si and P are discharged from the respective targets as ions and they reach a substrate 5 while a plume 12 is formed. Then, they are deposited on the substrate 5 and the thin film is formed. Namely, the Si film is formed on the substrate 5 and P is doped. Thus, the Si thin film which is P-doped in high density is formed.

10. 发明专利

JPH1032166A FORMATION OF CRYSTAL THIN FILM USING LASER ABLATION METHOD 失效
公开(公告)号：JPH1032166A
公开(公告)日：1998-02-03
申请号：JP18625896
申请日：1996-07-16
申请人： TOYOTA MOTOR CORP
发明人： NAKAMURA NAOKI , HASEGAWA HIROSHI , HANABUSA MITSUGI
IPC分类号： C23C14/28 , C23C14/58 , C30B13/00 , C30B13/24 , C30B23/02 , H01L21/20 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To prevent the generation of a crack in a crystal thin film, to uniformize a recrystallization of the crystal thin film and to enable forming the crystal thin film with large particle diameters by a method, wherein an emission from a target, using a laser beam irradiation is deposited on a substrate, and a laser beam is irradiated on this deposited layer to conduct a plurality of times of deposition-recrystallization cycles for recrystallizing the deposited layer by melting. SOLUTION: A first laser beam 1 is irradiated on a target 8 for a short time, the plume 14 of an emission from a target material is made to reach a substrate 5, and a thin deposited layer is made to form on the substrate 5. Immediately after the deposited layer is made to be formed, a second laser beam 12 for melt recrystallization use is irradiated on the deposited layer to recrystallize the deposited layer by melting. This deposition-melt crystallization cycle is repeated. That is, a crystal thin film of a prescribed film thickness is formed by a process of formation of the first deposited layer, using the first laser beam irradiation → the melt recrystallization of the first deposited layer using the second laser beam irradiation → the formation of a second deposited layer using the first laser beam irradiation → the melt recrystallization of the second deposited layer using the second laser beam irradiation....

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式