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1. 发明专利

JPH07225095A BLOCK TYPE AND MULTI-TUBE TYPE GRAPHITE-MADE HEAT EXCHANGER 失效
公开(公告)号：JPH07225095A
公开(公告)日：1995-08-22
申请号：JP5436694
申请日：1994-02-15
申请人： TOYO TANSO CO , NIPPON HYDROGENE KOGYO
发明人： NOGAMI AKIRA , BANSHO TAKASHI
IPC分类号： F28F21/02
摘要： PURPOSE:To obtain a graphite-made heat exchanger which can be repeatedly used without abrasion while the characteristics of graphite base material and others are kept in the best use, by a method wherein graphite-made heat exchanger elements are molded of isotropic graphite material and the surface layer of the isotropic graphite material is converted to silicone carbide up to a specified depth below the surface. CONSTITUTION:A block type or multi-tube type graphite-made heat exchanger is used in exchanging heat with a fluid containing abrasive particles and its elements are made of isotropic graphite material. In this case, at least the surface layer of the isotropic material which comes in contact with process fluid is converted to silicon carbide up to a depth of 0.2-2.0mm below the surface. Thereby, the graphite-made heat exchanger, which can be repeatedly used without abrasion by fluid containing salt crystals having a low solubility or slurry while the excellent chemical resistant properties of the graphite base material and silicone carbide and the good heat transfer coefficient and workability of the graphite base material are kept in the best use, can be obtained.

2. 发明专利

JP2001107239A CVD-SiC EXCELLENT IN CORROSION RESISTANCE, CORROSION RESISTING MEMBER USING THE SAME, AND TREATMENT DEVICE 失效
公开(公告)号：JP2001107239A
公开(公告)日：2001-04-17
申请号：JP2000229716
申请日：2000-07-28
申请人： TOKYO ELECTRON LTD , TOYO TANSO CO
发明人： OTSUKI HAYASHI , NOGAMI AKIRA
IPC分类号： C04B35/565 , C23C16/42 , H01L21/205 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide CVD-SiC excellent in corrosion resistance and hard to etch using a gas containing halogen such as ClF3 and to provide CVD-SiC excellent in corrosion resistance and having uniform surface condition. SOLUTION: In the CVD-SiC excellent in corrosion resistance, a β-SiC crystal oriented so that the peak intensity ratio between the (220) plane and the (311) plane by the X-ray diffraction of the surface becomes >=0.15 is contained or the β-SiC crystal and an α-SiC crystal having 6H structure coexist. Corrosion resisting members 3, 5 and 9 can be obtained by coating a basis material with such a CVD-SiC.

3. 发明专利

JPH11128084A COOKWARE 失效
公开(公告)号：JPH11128084A
公开(公告)日：1999-05-18
申请号：JP29434397
申请日：1997-10-27
申请人： TOYO TANSO CO
发明人： TOJO TETSURO , NOGAMI AKIRA
IPC分类号： A47J37/06 , A47J27/00 , A47J36/02
摘要： PROBLEM TO BE SOLVED: To prevent a breakage from easily occurring by joining a porous body to a joining layer with larger joining force even when large thermal expansion difference occurs by heating at the time of cooling or a load is given by the contact of cooking utensils, etc. SOLUTION: A cookware is provided with a black lead base body 2 consisting of a porous body which is formed in a prescribed shape so as to hold cooked food 1 and the joining layer 3 which is formed at a cooking surface 9 side being brought into contact with cooked food 1 in the black lead base body 2 and which consists of a low molcular weight fluororesin which intrudes to gaps 10 exposed on a cooking surface 9. On the front surface of the joining layer 3, projecting and recessed shapes are formed and an intermediate layer 7 consisting of a high molcular weight flororesin, a buffering layer 5 consisting of the high molcular weight fluororesin containing a buffering member 4 and a front surface layer 6 consisting of the low molcular weight and high molcular weight fluororesins are formed in order.

4. 发明专利

JPH10245266A PURIFICATION OF SILICON CARBIDE-BASED MOLDED PRODUCT 失效
公开(公告)号：JPH10245266A
公开(公告)日：1998-09-14
申请号：JP5003697
申请日：1997-03-05
申请人： TOYO TANSO CO
发明人： KIKU HIDEKI , NOGAMI AKIRA
IPC分类号： C04B41/80 , C04B35/565
摘要： PROBLEM TO BE SOLVED: To efficiently remove impurities in a molded product without causing the deterioration in strength of the molded product itself according to a simple method by forming an Si membrane on the surface of a silicon carbide-based molded product according to a chemical vapor deposition(CVD) method, then heat-treating the formed membrane, diffusing and adsorbing the impurities into the Si membrane and removing the whole membrane by an etching method. SOLUTION: The surface of a silicon carbide-based molded product having the surface comprising silicon carbide is coated with an Si membrane according the a CVD method and the formed membrane is then heat-treated at >=1,000 deg.C for several to some ten hr to diffuse and adsorb impurities in the interior of the molded product into the Si membrane. The whole Si membrane into which the impurities are diffused and adsorbed is subsequently removed by a dry or a wet etching method. A mixed gas containing a halogen is preferably used as a washing medium in the dry etching method and a solution containing the halogen is preferably used as a washing medium in the wet etching method. The silicon carbide-based molded product obtained by the method is suitably used as a constituent member for producing semiconductors.

5. 发明专利

JPH07315932A PRODUCTION OF CARBON FIBER REINFORCED CARBON COMPOSITE MATERIAL CONVERTED INTO SILICON CARBIDE 失效
公开(公告)号：JPH07315932A
公开(公告)日：1995-12-05
申请号：JP14214994
申请日：1994-05-22
申请人： TOYO TANSO CO
发明人： SOGABE TOSHIAKI , NOGAMI AKIRA , MATSUDA TERUO , HIRAOKA TOSHIJI , SUZUKI HITOSHI
IPC分类号： C04B35/565 , C04B35/52 , C04B41/87
摘要： PURPOSE:To obtain a carbon fiber reinforced carbon composite material converted into SiC and having high heat conductivity and remarkably improved oxidation resistance while maintaining and exhibiting superior characteristics peculiar to a carbon fiber reinforced carbon composite material light in weight, having high strength, high toughness and satisfactory workability and excellent in heat resistance and thermal shock resistance. CONSTITUTION:A carbon fiber reinforced carbon composite material having 1.4-2.0mg/m bulk density and 3-20mum average pore radius is silicified to obtain the objective carbon fiber reinforced carbon composite material converted into silicon carbide. The heat conductivity of this composite material at room temp. measured by a laser beam flashing method is >=200W/m.K in at least one direction of the material.

6. 发明专利

JPH06216049A REFLECTING MIRROR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06216049A
公开(公告)日：1994-08-05
申请号：JP2050393
申请日：1993-01-13
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA , WATANABE YOSHIHIRO
IPC分类号： G02B5/08 , G21K1/06 , H01L21/205 , H01S3/08
摘要： PURPOSE:To develop a reflecting mirror which is high in fusing point, excellent in heat resistance, high in thermal conductivity and reflectivity, and uniform (isotropic) in physical and chemical properties as a whole. CONSTITUTION:A reflecting mirror is formed of isotropic graphite material as base material, a silicon carbide film is deposited on the surface of an isotropic graphite material through a CVD method, and the silicon carbide film is accurately polished into the mirror surface of a reflecting mirror, wherein an isotropic graphite material is partially turned into silicon carbide, and then a silicon carbide film is formed thereon through a CVD method and accurately polished into a mirror surface of a reflecting mirror.

7. 发明专利

JPH0583517B2 失效
公开(公告)号：JPH0583517B2
公开(公告)日：1993-11-26
申请号：JP7759588
申请日：1988-03-29
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA , HOSHIKAWA TOORU
IPC分类号： C04B41/87 , C04B35/52 , C04B41/50

8. 发明专利

JP2019026499A 単結晶の製造方法审中-公开
公开(公告)号：JP2019026499A
公开(公告)日：2019-02-21
申请号：JP2017146203
申请日：2017-07-28
申请人： TOYO TANSO CO , KWANSEI GAKUIN UNIV
发明人： YABUKI NORITO , ABE SUMIHISA , SUDO YUSUKE , NOGAMI AKIRA , KITAHATA MAKOTO , KANEKO TADAAKI , ASHIDA KOJI
IPC分类号： C30B29/36 , C30B19/04 , C30B19/12
摘要：【課題】高品質かつ表面のサイズが大きい単結晶をより簡単な方法でより確実に製造する方法を提供する。【解決手段】単結晶SiC42の製造方法では、パターン形成工程と、結晶成長工程と、を含む処理を行う。パターン形成工程では、六方晶系の結晶構造を有するSiC基板40の(0001)面又は(000−1)面の一部を除去するか一部を成長させることで、c軸方向に突出するとともにc軸方向で見たときに長尺状となる長尺片41を間隔を空けて複数形成する。結晶成長工程では、SiC基板40に対してc軸に垂直な方向及びc軸方向の結晶成長を行うことで、長尺片41から成長させた単結晶SiC42同士を接続する。パターン形成工程で形成する長尺片41には、c軸方向で見たときの長手方向と、SiC基板40の[11−20]方向と、がなす角の絶対値が、30°+60n°±15°の範囲内であるものが含まれている。【選択図】図3

9. 发明专利

JPH10182232A PRODUCTION OF SILICON CARBIDE FORMED BODY 失效
公开(公告)号：JPH10182232A
公开(公告)日：1998-07-07
申请号：JP34475496
申请日：1996-12-25
申请人： TOYO TANSO CO
发明人： NOGAMI AKIRA
IPC分类号： C04B35/573
摘要： PROBLEM TO BE SOLVED: To efficiently produce a textually more homogeneous SiC formed body having high purity and satisfactory dimensional precision while simplifying a producing process by a chemical vapor phase reaction method by allowing a glassy carbon substrate with gaseous SiO. SOLUTION: A glassy carbon substrate is allowed to react with gaseous SiO, e.g. at 1,800 deg.C for 10hr. The glassy carbon substrate is made of a glassy carbon material obtd. by the conventional process by which a thermosetting resin is molded, cured, mechanically worked, carbonized and treated at a high temp. and it may be made of a glassy composite material contg. graphite powder, carbon fibers, etc. It is preferable that the glassy carbon material has 1.20-1.60g/cm bulk density, contains pores each having =1cm /g and has 1-8vol.% porosity in the case of firing at 2,000 deg.C.

10. 发明专利

JPH1097960A SILICON CARBIDE DEPOSITED DUMMY WAFER 失效
公开(公告)号：JPH1097960A
公开(公告)日：1998-04-14
申请号：JP27151096
申请日：1996-09-19
申请人： TOYO TANSO CO
发明人： OKADA MASAKI , NOGAMI AKIRA , HIRANO HIROYUKI , IMAMURA KAZUHIRO , YOSHIMOTO YOSHIAKI , KIKU HIDEKI
IPC分类号： H01L21/205 , H01L21/02 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To suppress a semiconductor wafer from warping after being processed, by forming g a silicon carbide film by chemical vapor deposition on the surface of a high-purity Si substrate having almost the same shape and thickness as the wafer. SOLUTION: A single crystal Si wafer substrate 1 is laid on a single wafer processing silicon carbide covered graphite susceptor 2 in a quartz glass tube 6, the tube 6 is once evacuated, the susceptor 2 and substrate 1 are heated up to a specified temp. in an H atmosphere by the induction heat of an induction coil 9 and held for a specified time. With holding them at a specified temp. silane dichloride, H carrier gas and ethane dichloride gas are fed parallel to the substrate 1 from slits 7a of a gas feed pipe 7 set in the glass tube 6 held at a high pressure to react with each side for specified time.

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