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    • 4. 发明专利
    • C/C CRUCIBLE FOR PULLING SINGLE CRYSTAL
    • JP2000086382A
    • 2000-03-28
    • JP26262898
    • 1998-09-17
    • TOYO TANSO CO
    • TOMITA YUJIYAMAJI MASATOSHI
    • C30B15/10
    • PROBLEM TO BE SOLVED: To smooth the surface of a quartz crucible, to make the uniformly heating part of the quartz crucible wide and to improve qualities of single crystal ingot by making the crucible have an innermost face obtained by sticking a carbon fiber cloth having a high carbon fiber density to a mandrel in a multilayer and adjusting the gas permeability of the crucible to a specific value or lower than it. SOLUTION: This C/C crucible has =0.8 filaments/mm. The surface of the crucible is impregnated with pyrolytic carbon. The crucible is produced by laminating a carbon fiber cloth 11 impregnated with a matrix precursor such as a phenol resin, etc., to the surface of a mandrel attached to a filament winding apparatus. A projected part 13 is wound with carbon fibers and a level winding 14 (0-10 degrees from a central axis 16) reaching a cylindrical part 12 is carried out. A parallel winding 15 is performed. These operations are repeated several times to give a formed body. The formed body is carbonized, impregnated with a pitch, baked, reacted with a halogen gas and impregnated with pyrolytic carbon.
    • 5. 发明专利
    • CARBON FIBER REINFORCED CARBON COMPOSITE FOR SINGLE CRYSTAL PULLING UP APPARATUS
    • JP2000219592A
    • 2000-08-08
    • JP1924699
    • 1999-01-28
    • TOYO TANSO CO
    • HIRAOKA TOSHIJISOGABE TOSHIAKIYAMAJI MASATOSHIOTA NAOTO
    • C04B35/83C04B35/80C30B15/10
    • PROBLEM TO BE SOLVED: To make it possible to pull up a single crystal by cz-method high in thermal efficiency by selectively forming a pyrolyzed carbon coating film, which has an ISO- structure exhibiting high surface heat emissivity, on the whole or a portion of the surface of a crucible body formed from a carbon fiber reinforced carbon composite. SOLUTION: A crucible body 2 formed from a carbon fiber reinforced carbon composite, which is lightweight and has high mechanical strength, is obtained by impregnating pitch or a resin such as phenol resin into the carbon fiber in the form of plain fabric cloth or the like to be formed in matrix and applying carbonizing treatment and graphitizing treatment. Thereafter, a coating film 3 of pyrolytic carbon is formed on the surface of the crucible body 2 thus obtained. The coating film 3 is formed by pyrolyzing a hydrocarbon such as propane or the like using CVD-method, preferably while controlling the pyrolytic conditions so that the carbon coating film having the ISO-structure is formed. Thereby, the heat emissivity of the surface of the crucible body 2 becomes 0.45-0.75 when the heat emissivity of the virtual black body is set to 1. Single crystals can be pulled up with high heat efficiency by utilizing the obtained crucible 1 in the cz-process.
    • 6. 发明专利
    • HIGH-TEMPERATURE MEMBER FOR DEVICE FOR PULLING UP SINGLE CRYSTAL
    • JPH10139581A
    • 1998-05-26
    • JP21170497
    • 1997-08-06
    • TOYO TANSO CO
    • YAMAJI MASATOSHIHIRAOKA TOSHIJIMIURA AKIHIRO
    • C04B35/83C04B35/52C30B15/10C30B29/06
    • PROBLEM TO BE SOLVED: To suppress the formation of SiC by gaseous SiO2 and vapor deposition of Si as the micropores of the surface of a C/C material is filled by coating the surfaces of the high-temp. members made of the C/C material for a device for pulling up a single crystal with glassy carbon. SOLUTION: The C/C material having a light weight, high strength and heat resistance is used for the high-tap. members (quartz crucible supporting crucible, heat shields) installed in the device for pulling up the single crystal for silicon semiconductors, by which a contribution is made particularly to the operation performance to pull up the large-diameter single crystal. The C/C material is obtd. by graphitizing a molding formed by impregnating carbon fibers with pitch, etc., and the micropores exist at its surface. These micropores induce an SiC formation reaction with the gaseous SiO and constitute the condensation point of silicon vapor, thereby deteriorating the members. The surfaces of the members made of the C/C material are coated with the glassy carbon to a specific surface area of /g, by which the micropores are embedded and the defects described above are prevented. The C/C base material is immersed into the soln. of a polymer, such as phenolic resin and is subjected to a purity enhancing treatment, by which the dense glassy carbon is precipitated.
    • 9. 发明专利
    • CRUCIBLE FOR PULLING UP SINGLE CRYSTAL MADE OF CARBON- FIBER REINFORCED CARBON COMPOSITE MATERIAL
    • JP2000185995A
    • 2000-07-04
    • JP36372198
    • 1998-12-22
    • TOYO TANSO CO
    • HIRAOKA TOSHIJIYAMAJI MASATOSHI
    • C04B35/83C30B15/10
    • PROBLEM TO BE SOLVED: To prevent the elimination of carbon fibers, prolong the life and stably install a crucible in a chamber by molding the crucible for pulling up a single crystal from a carbon-fiber reinforced carbon composite material and forming a connecting part of the bowl-shaped bottom in the central part to a device into a recessed state. SOLUTION: This crucible 41 for pulling up a single crystal made of a carbon-fiber reinforced carbon composite material is obtained by rotating a mandrel having a cylindrical part and a bulged part through a shaft part and winding carbon fibers impregnated with a resin which is a matrix precursor around the outer periphery thereof according to a filament winding method, heat-treating the resultant crucible- shaped molded product, carbonizing the resin, further carrying out graphitization and purity raising treatment, providing a molded product composed of the carbon-fiber reinforced carbon composite material, machining the molded product and forming the bottom in the central part into a recessed state. The recessed part 42 has a prescribed size and the wall thickness in the thinnest part is preferably >=50% based on the wall thickness of the lateral body section of the crucible. The crucible 41 is used for pulling up a single crystal such as silicon by the Czochralski process.