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    • 6. 发明专利
    • CUVETTE FOR ATOMIC ABSORPTION SPECTROCHEMICAL ANALYSIS
    • JPH10300663A
    • 1998-11-13
    • JP11257897
    • 1997-04-30
    • TOYO TANSO CO
    • NOZAKI HIDEHIKOSUZUKI HITOSHIAIDA SHINSUKE
    • G01N21/03G01N21/31
    • PROBLEM TO BE SOLVED: To quicken a measurement b preventing occurrence of peeling phenomenon using glassy carbon as a compositional material thereby prolonging the lifetime of a cuvette and quickening the atomization rate of a sample through low wettability effect, or the like. SOLUTION: The cuvette for electric heating type atomic absorption spectrochemical analysis is composed of a glassy carbon material produced by molding, curing and carbonizing thermosetting powder phenol resin or a mixture thereof with fine graphite powder. Carbonization is performed by heating up to 3000 deg.C, for example, at a specified temperature rising rate and a glassy carbon material thus produced is machined to specified dimensions using a diamond tool, or the like. treferably, the glassy carbonic cuvette has bulk density of 1.4 Mg/m or above, porosity of 1.5 vol.% or below and resistivity of 25 μωm or above. When such characteristics, variation of shape, e.g. coarsening of surface does not take place when a cuvette is immersed into a mixture of sulfuric acid and nitric acid for 100 hours, for example.
    • 8. 发明专利
    • SILICON CARBIDE MOLDING AND ITS PRODUCTION
    • JP2000109368A
    • 2000-04-18
    • JP29467798
    • 1998-09-30
    • TOYO TANSO CO
    • OTA NAOTONOZAKI HIDEHIKOBITO SHINGOSOGABE TOSHIAKI
    • C04B35/573C04B35/565H01L21/66
    • PROBLEM TO BE SOLVED: To obtain a silicon carbide molding having 8 specified bulk density and not causing the peeling of the surface layer by carbonizing a mixture of a thermosetting resin and an organic product in a liquid phase carbonization step and then carrying out silicification by a chemical vapor phase reaction. SOLUTION: A thermosetting resin having a high remaining rate of carbon, e.g. a phenolic resin is mixed with 10-50 wt.% organic product, e.g. mesocarbon microbeads or raw coke produced in the liquid phase carbonization of heavy petroleum oil or pitch. The mixture is molded hardened at about 200 deg.C, fired at a controlled heating rate and carbonized in an inert atmosphere at >=800 deg.C to form a substrate for conversion into silicon carbide. After the carbonization, high purification treatment such as heat treatment in the presence of gaseous halogen is carried out if necessary. The carbonaceous substrate is then allowed to react with gaseous SiO to obtain the objective silicon carbide substrate having 2.4-2.8 g/cm3 bulk density. Since this substrate has no warpage and is excellent in dimensional stability, it is suitable for use as a dummy wafer used in a step for heat-treating semiconductor wafers.