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1. 发明专利

JPS60239015A FORMATION OF AMORPHOUS SILICON FILM 失效
公开(公告)号：JPS60239015A
公开(公告)日：1985-11-27
申请号：JP9482484
申请日：1984-05-11
申请人： TOYO BOSEKI
发明人： IMAGAWA HIROSHI , IWANISHI MASUMI , YOKOYAMA SEIICHIROU , AKIYAMA SETSU
IPC分类号： H01L31/04 , C23C16/24 , H01L21/205
摘要： PURPOSE:To contrive to suppress generation of powder and to enhance the depositing speed of an amorphous Si film at formation of the amorphous silicon film by a method wherein plasma intensity in glow discharge space is dispersed. CONSTITUTION:Raw material gas 9 is introduced into a reaction chamber 8. Gas 9 flows in discharge space, and deposited on a substrate 5. Discharge space is divided into two spaces of discharge space W formed by electrodes 1, 2, and discharge space S formed by the electrode 2 and an electrode 4 by equipping the electrode 2 between the electrodes 1, 4. At this case, weak discharge is generated in space W, and moreover strong discharge is generated in space S. An inclination of plasma intensity is provided to discharge space like this, and by flowing raw material gas to the strong part from the weak part of plasma intensity, the decomposition process of raw material gas, and other excitation, diffusion and surface reaction processes are made to be performed in different plasma intensity regions. Accordingly, the respective processes from decomposition of raw material gas to a surface reaction are advanced smoothly, and as a result, suppression of generation of powder, and enhancement of the depositing speed of an amorphous Si film can be attained.

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