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    • 1. 发明专利
    • CHARGING ELECTRONIC EQUIPMENT SYSTEM
    • JPH01222630A
    • 1989-09-05
    • JP4609488
    • 1988-02-29
    • TOSHIBA CORPTOSHIBA AUDIO VIDEO ENG
    • SAKANISHI MASAYUKIISHII TAKAAKIHOSHINO MAKOTO
    • H02J7/10
    • PURPOSE:To shorten the time for charging, by comparing the output voltage from a conversion circuit corresponding to the coil field change caused by the change of charging current with the reference voltage through a comparison circuit, and by controlling the voltage applied to the coil with its potential difference, making the charging current constant for shortening the time for charging. CONSTITUTION:The magnetism caused by the charging current flowing through a coil 13 connected to a charging battery 12 is detected by a conversion circuit 15 and the voltage corresponding to the magnetism thus detected is outputted into a comparator 20. In the comparator 20 the inputted voltage is compared with the reference voltage of a DC constant voltage source 31 and the value of its potential difference is outputted into the base of a transistor 19. On that account, the output voltage of the transistor 19 is controlled and supplied to the charging battery 12 through a diode 18. In this way, as the output voltage of the comparator 20 changes, the supply voltage across the base and the emitter of the transistor 19 changes and the voltage applied to the coil 13 is controlled by that portion, and the charging current flowing through the coil 13 is kept constant.
    • 6. 发明专利
    • RADIO TELEPHONY SYSTEM
    • JPH01143546A
    • 1989-06-06
    • JP30183587
    • 1987-11-30
    • TOSHIBA CORPTOSHIBA AUDIO VIDEO ENG
    • SAKANISHI MASAYUKIISHII TAKAAKIHOSHINO MAKOTO
    • G10L11/00G10L15/00H04M1/274
    • PURPOSE:To easily confirm telephone number information registered in a registration means by providing a means registering the telephone number information, an input means for readout instruction of the registered telephone number information, a readout means and a display means or the like. CONSTITUTION:When a telephone number registered in a RAM 19 via a microphone 15, a voice recognition LSI 18 and a voice recording IC 21 or the like is confirmed, the confirmation mode is at first set. Then when the CPU 20 recognizes the confirmation mode, a readout instruction and a prescribed registration address are sent to the IC 21 and the RAM 19. Thus, the voice recorded in the IC 21 is reproduced and outputted from a speaker 16 and the telephone number is read from the RAM 19 and displayed on a display section 13. Then whether or not the next data output is consecutive is confirmed to the user and in case of the data output consecution, and the voice and telephone number corresponding to the address being the result of incrementing the registered address by 1 are outputted. Thus, the telephone number information registered in the RAM 19 is easily confirmed.
    • 8. 发明专利
    • Power semiconductor device
    • 功率半导体器件
    • JP2014063799A
    • 2014-04-10
    • JP2012206724
    • 2012-09-20
    • Toshiba Corp株式会社東芝
    • ISHII TAKAAKIKAMATA SHUJI
    • H01L29/06H01L29/41H01L29/739H01L29/78
    • PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of stabilizing a withstand voltage characteristic and improving a withstand voltage.SOLUTION: In a power semiconductor device 10 according to an embodiment of the invention, an n-type semiconductor substrate 14 is provided with a main cell portion 12 having a plurality of power semiconductor elements and a terminal portion 13 surrounding the main cell portion 12. The terminal portion 13 comprises a plurality of p-type guard ring layers 25, insulator films 24, and field relaxation layers 37. The plurality of guard ring layers 25 are arranged on the upper surface of the semiconductor substrate 14 so as to be separated from each other. Each of the plurality of guard ring layers 25 is in a ring shape, surrounding the main cell portion 12. Each insulator film 24 is formed on the semiconductor substrate 14, between the guard ring layers 25, and between a base layer 19 that is provided in the main cell portion 12 and the guard ring layer 25. The field relaxation layers 37 including p-type impurities are arranged on each of the insulator films 24.
    • 要解决的问题:提供能够稳定耐电压特性并提高耐电压的功率半导体器件。解决方案:在根据本发明实施例的功率半导体器件10中,n型半导体衬底14设置有 具有多个功率半导体元件的主单元部分12和围绕主单元部分12的端子部分13.端子部分13包括多个p型保护环层25,绝缘体膜24和场弛豫层37。 多个保护环层25布置在半导体衬底14的上表面上以彼此分离。 多个保护环层25中的每一个围绕主单元部分12呈环状。每个绝缘膜24形成在半导体衬底14上,保护环层25之间以及设置在基底层19之间 在主单元部分12和保护环层25中。包含p型杂质的场弛豫层37布置在每个绝缘膜24上。
    • 9. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2012064641A
    • 2012-03-29
    • JP2010205481
    • 2010-09-14
    • Toshiba Corp株式会社東芝
    • ISHII TAKAAKI
    • H01L29/78H01L29/739
    • H01L29/7397H01L29/0619H01L29/1095H01L29/407H01L29/42376H01L29/4238H01L29/66348H01L29/66734H01L29/7813
    • PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves low gate capacitance.SOLUTION: A semiconductor device comprises: a first-conductive-type base layer; a second-conductive-type base layer provided on the first-conductive-type base layer; gate insulating films; first-conductive-type source layers selectively provided on a surface of the second-conductive-type base layer, adjacent to the gate insulating films; gate electrodes provided inside the gate insulating films in trenches; and main electrodes. The gate insulating films are provided on the side surfaces of the trenches reaching the first-conductive-type base layer from the surface of the second-conductive-type base layer. The main electrodes are provided on the surface of the second-conductive-type base layer and surfaces of the first-conductive-type source layers, and at a deeper position than the gate electrodes in the trenches and the second-conductive-type base layer. The main electrodes are electrically connected to the second-conductive-type base layer and the first-conductive-type source layers.
    • 要解决的问题:提供一种实现低栅极电容的半导体器件。 解决方案:半导体器件包括:第一导电型基极层; 设置在所述第一导电型基底层上的第二导电型基底层; 栅极绝缘膜; 选择性地设置在与栅极绝缘膜相邻的第二导电型基极层的表面上的第一导电型源极层; 设置在沟槽内的栅极绝缘膜内的栅电极; 和主电极。 栅极绝缘膜设置在从第二导电型基底层的表面到达第一导电型基底层的沟槽的侧表面上。 主电极设置在第二导电型基极层的表面和第一导电型源极的表面上,并且在比沟槽中的栅电极和第二导电型基极层更深的位置 。 主电极电连接到第二导电型基极层和第一导电型源极层。 版权所有(C)2012,JPO&INPIT
    • 10. 发明专利
    • Overcharge protective circuit, battery pack using the same and cellular phone
    • 超大型保护电路,使用电池的电池组和蜂窝电话
    • JP2010081712A
    • 2010-04-08
    • JP2008245963
    • 2008-09-25
    • Toshiba Corp株式会社東芝
    • ISHII TAKAAKISATO MASAKI
    • H02J7/00H01M10/44H02H7/18
    • Y02E60/12
    • PROBLEM TO BE SOLVED: To provide an overcharge protective circuit capable of maintaining overcharge protection even if voltage ripples of a charging voltage are large.
      SOLUTION: The overcharge protective circuit includes: a comparing section 111 for comparing a charging voltage of a lithium ion battery with a first reference voltage and a second reference voltage lower than the first reference voltage, and outputting a first control signal when the charging voltage exceeds the first reference voltage and outputting a second control signal when the charging voltage becomes lower than the second reference voltage; a first control section 113 for interrupting the charging of the lithium ion battery in response to the first control signal and resuming the charging in response to the second control signal; and a second control section 121 for inhibiting the charging resume operation based on the second control signal by the control section, if a time of continuously outputting the first signal at a period shorter than a predetermined period exceeds a predetermined time.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供即使充电电压的电压波动大也能够保持过充电保护的过充电保护电路。 解决方案:过充保护电路包括:比较部111,用于将锂离子电池的充电电压与第一参考电压和低于第一参考电压的第二参考电压进行比较,并且当第一控制信号 当充电电压变得低于第二参考电压时,充电电压超过第一参考电压并输出第二控制信号; 第一控制部分113,用于响应于第一控制信号中断锂离子电池的充电并响应于第二控制信号恢复充电; 以及如果在比预定时间段短的时间连续输出第一信号的时间超过预定时间,则控制部分基于第二控制信号禁止充电恢复操作的第二控制部分121。 版权所有(C)2010,JPO&INPIT