专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011179922A Piezoelectric device 有权
标题翻译：压电器件
公开(公告)号：JP2011179922A
公开(公告)日：2011-09-15
申请号：JP2010043426
申请日：2010-02-26
申请人： Tdk Corp , Tdk株式会社
发明人： INOKUCHI DAISUKE
IPC分类号： G01C19/56 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device which has an excellent performance of vibration resistance and impact resistance to disturbance vibration. SOLUTION: A yaw rate sensor device 1 includes: a sensor holder 5 which includes a sensor part 2 having a piezoelectric element; a support 3 which supports the sensor holder and has elasticity; and a case 4 wherein the sensor holder and the support are provided, and has a recess 7 in the bottom wall of the case to keep at least a part of the support held inside the recess. For the support 3, resin or a resin composition can be used. Moreover, a filler may be added to the resin or the resin composition. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有优异的耐振动性和抗干扰振动性能的压电振动装置。解决方案：偏航率传感器装置1包括：传感器保持器5，其包括具有压电元件的传感器部分2; 支撑传感器支架并具有弹性的支撑件3; 以及设置传感器保持器和支撑件的壳体4，并且在壳体的底壁中具有凹部7，以将至少一部分支撑件保持在凹部内。对于载体3，可以使用树脂或树脂组合物。此外，可以向树脂或树脂组合物中加入填料。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2020090403A 単結晶育成用ルツボ、単結晶製造方法及び単結晶审中-公开
公开(公告)号：JP2020090403A
公开(公告)日：2020-06-11
申请号：JP2018227084
申请日：2018-12-04
申请人： TDK CORP
发明人： KAWASAKI KATSUMI , HIRABAYASHI JUN , FUJITA MINORU , INOKUCHI DAISUKE , ARIMA JUN , KONDO MAKIO
IPC分类号： C30B11/00 , C30B29/16
摘要：【課題】冷却されたルツボが収縮する応力が育成された単結晶に加わることを低減する。【解決手段】単結晶育成用の原料融液8が収容されつつ固化する単結晶育成用ルツボ5Aであって、原料融液8を囲繞する側壁部5sと、側壁部5sと連続しつつ原料融液8を支持する底部5bとを備え、側壁部5sは横断面視で内側に周長冗長性を有するため、側壁部5sは横断面視でいずれかの部位に内側に周長が冗長な部位を有することになり、単結晶育成後の冷却工程で単結晶育成用ルツボ5Aが冷却されると、横断面視で内側に周長が冗長な部位が単結晶育成用ルツボ5Aの外側に展張するため、冷却された単結晶育成用ルツボ5Aが収縮する応力が育成された単結晶11に加わることを低減できる。【選択図】図3

3. 发明专利

JP2010232641A Method of forming through electrode and semiconductor substrate 有权
标题翻译：通过电极和半导体基板形成的方法
公开(公告)号：JP2010232641A
公开(公告)日：2010-10-14
申请号：JP2010035341
申请日：2010-02-19
申请人： Tdk Corp , Tdk株式会社
发明人： SOGABE TOMOHIRO , DOMON TAKAAKI , INOKUCHI DAISUKE , TAKAGI MIKIO , ONCHI KENICHI
IPC分类号： H01L21/3205 , H01L23/52 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/16225 , H01L2924/10253 , H01L2924/1461 , H01L2924/15311 , H01L2924/16251 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a through electrode, which simplifies a process and apparatus with no need of handling molten metals while maintaining a high temperature atmosphere, and which densely fills metals in through-holes, being compared with when using conductive paste. SOLUTION: A first non-through-hole 21 having an opening on the surface of an Si substrate 10, and a second non-through-hole 22 having a smaller opening than the first non-through-hole 21 in the bottom part thereof, are formed. A solid metal 50 is mounted on the bottom part thereof. The Si substrate 10 is placed under a decompressing atmosphere and heated up to in the vicinity of the softening point of the solid metal 50. While maintaining the heating condition so as to transit from the decompressing atmosphere to a pressurizing atmosphere, the second non-through-hole 22 is filled with the softened or melted metal 50. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成通孔的方法，其简化了在保持高温气氛的同时不需要处理熔融金属的方法和装置，并且将通孔中的金属密集地填充进去进行比较使用导电胶时。解决方案：在Si衬底10的表面上具有开口的第一非通孔21和具有比底部的第一非通孔21小的开口的第二非通孔22 形成其一部分。固体金属50安装在其底部。将Si衬底10放置在减压气氛下并加热到固体金属50的软化点附近。在保持加热条件以便从减压气氛转移到加压气氛的同时，第二非通孔孔22填充有软化或熔化的金属50.版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011179923A Piezoelectric device 有权
标题翻译：压电器件
公开(公告)号：JP2011179923A
公开(公告)日：2011-09-15
申请号：JP2010043427
申请日：2010-02-26
申请人： Tdk Corp , Tdk株式会社
发明人： INOKUCHI DAISUKE , SOGABE TOMOHIRO
IPC分类号： G01C19/56 , G01P9/04 , H01L41/08 , H01L41/09
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device which has an excellent performance of vibration resistance and impact resistance to disturbance vibration. SOLUTION: A yaw rate sensor device 1 includes a sensor holder 5 which includes a sensor part having a piezoelectric element 2, and a suppressor 4 which is disposed in proximity to at least a part of the outer periphery of the sensor holder 5 and suppresses displacement of the sensor holder in a prescribed direction. The sensor holder 5 is one plate which extends in the direction parallel to the direction of extension of a bottom face 14 and which has a thickness t and consists of stainless steel, silicon or the like. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有优异的耐振动性和抗干扰振动性能的压电振动装置。解决方案：偏航率传感器装置1包括传感器保持器5，传感器保持器5包括具有压电元件2的传感器部分和抑制器4，该抑制器4设置在传感器保持器5的外周的至少一部分附近并且抑制传感器保持器在规定方向上的位移。传感器支架5是沿着与底面14的延伸方向平行的方向延伸的板，其厚度t由不锈钢，硅等构成。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011137654A Piezoelectric vibration device 有权
标题翻译：压电振动装置
公开(公告)号：JP2011137654A
公开(公告)日：2011-07-14
申请号：JP2009296199
申请日：2009-12-25
申请人： Tdk Corp , Tdk株式会社
发明人： SOGABE TOMOHIRO , MASAI MIGAKU , KAWABATA KENICHI , INOKUCHI DAISUKE
IPC分类号： G01C19/56 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device superior in a vibration resistance and an impact resistance. SOLUTION: In a yaw rate sensor apparatus 7, a yaw rate sensor element 2 is fixed to a support substrate 71 by fixing sections 72a, 72b. The fixing sections 72a, 72b have parallel sections 73a, 73b, and raised sections 74a, 74b, fix the yaw rate sensor element 2 at fixing section ends 75a, 75b of the raised sections 74a, 74b, and support the yaw rate sensor element 2 in a space above the support substrate 71 so as to cause the yaw rate sensor element 2 to be parallel to the support substrate 71 in the extending direction. A brace 79 is provided between surfaces of the fixing sections 72a, 72b and the support substrate 71, and mutually couples the parallel sections 73a, 73b of the fixing units 72a, 72b. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗振动性和抗冲击性优异的压电振动装置。解决方案：在偏航率传感器装置7中，横摆率传感器元件2通过固定部72a，72b固定在支撑基板71上。固定部分72a，72b具有平行部分73a，73b和凸起部分74a，74b，将偏转速度传感器元件2固定在凸起部分74a，74b的固定部分端部75a，75b处，并支撑横摆角速度传感器元件2 在支撑基板71上方的空间内，使横摆率传感器元件2在延伸方向上平行于支撑基板71。在固定部72a，72b和支撑基板71的表面之间设置有支柱79，并且将固定部72a，72b的平行部73a，73b相互连结。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011137649A Piezoelectric vibration device 有权
标题翻译：压电振动装置
公开(公告)号：JP2011137649A
公开(公告)日：2011-07-14
申请号：JP2009296045
申请日：2009-12-25
申请人： Tdk Corp , Tdk株式会社
发明人： MASAI MIGAKU , SOGABE TOMOHIRO , INOKUCHI DAISUKE
IPC分类号： G01C19/56 , G01P9/04
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device having vibration-resistance and shock-resistance performance against disturbance vibration.
SOLUTION: A yaw rate sensor device 1 includes: a yaw rate sensor element 2 including a piezoelectric element on a semiconductor substrate; and a plate-like fixing unit 5 for fixing and supporting the yaw rate sensor element 2. Both the ends of the fixing unit 5 are held by fixing unit holding stands 45, 45' provided within a case 4 and the fixing unit 5 extends in an extension direction of the semiconductor substrate.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有抗干扰振动的抗振动和抗冲击性能的压电振动装置。解决方案：偏航率传感器装置1包括：在半导体衬底上包括压电元件的横摆率传感器元件2; 以及用于固定和支撑横摆率传感器元件2的板状固定单元5.固定单元5的两端由设置在壳体4内的固定单元保持架45,45'保持，固定单元5延伸半导体衬底的延伸方向。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010035059A Electronic device 审中-公开
标题翻译：电子设备
公开(公告)号：JP2010035059A
公开(公告)日：2010-02-12
申请号：JP2008197093
申请日：2008-07-30
申请人： Tdk Corp , Tdk株式会社
发明人： SOGABE TOMOHIRO , DOMON TAKAAKI , INOKUCHI DAISUKE
IPC分类号： H03H9/17
摘要： PROBLEM TO BE SOLVED: To prevent an independent thin film from being damaged due to an atmospheric pressure difference between spaces at both sides, in a manufacturing process, by communicating the spaces at both the sides without having an adverse effect on vibration property of the independent thin film, thereby improving a flexibility of the manufacturing process.
SOLUTION: An electronic device includes: a support 1 having a cavity 40; an independent thin film 20 supported by the support 1 so as to close the cavity; a first space 71 inside the cavity and a second space 72 outside the cavity, the first and second spaces being partitioned by the independent thin film; and a plurality of communicating parts 11, 12 communicating the first space and the second space, wherein openings 81a, 82a of the communicating parts 11, 12 are disposed with a position of the independent thin film as a criterion.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了防止由于两侧的空间之间的大气压差而导致的独立薄膜的损坏，在制造过程中，通过在两侧连通而不会对振动特性产生不利影响的独立薄膜，从而提高制造工艺的灵活性。解决方案：电子设备包括：具有空腔40的支撑件1; 由支撑体1支撑以便关闭空腔的独立薄膜20; 空腔内部的第一空间71和空腔外部的第二空间72，第一和第二空间被独立的薄膜隔开; 以及连通第一空间和第二空间的多个连通部11,12，其中连通部11,12的开口81a，82a以独立薄膜的位置为准。版权所有（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式