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1. 发明专利

JPS6159450B2 失效
公开(公告)号：JPS6159450B2
公开(公告)日：1986-12-16
申请号：JP8110378
申请日：1978-07-04
申请人： SUWA SEIKOSHA KK
发明人： IWAMOTO MITSUMASA , ASAKAWA TATSUJI
IPC分类号： G01K7/01 , G01K7/00

2. 发明专利

JPS6159449B2 失效
公开(公告)号：JPS6159449B2
公开(公告)日：1986-12-16
申请号：JP7717978
申请日：1978-06-26
申请人： SUWA SEIKOSHA KK
发明人： IWAMOTO MITSUMASA , ASAKAWA TATSUJI
IPC分类号： G01K7/01 , G01K7/00

3. 发明专利

JPS6131633B2 失效
公开(公告)号：JPS6131633B2
公开(公告)日：1986-07-21
申请号：JP11885077
申请日：1977-10-03
申请人： SUWA SEIKOSHA KK
发明人： ASAKAWA TATSUJI , IWAMOTO MITSUMASA
IPC分类号： H01L27/04 , H01L21/265 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/10 , H01L29/78

4. 发明专利

JPS6124666B2 JPS6124666B2 - 失效
公开(公告)号：JPS6124666B2
公开(公告)日：1986-06-12
申请号：JP14115377
申请日：1977-11-25
申请人： Suwa Seikosha Kk
发明人： MOROZUMI SHINJI , ASAKAWA TATSUJI
IPC分类号： G04G3/00 , G04G3/02 , G04G99/00 , H01L21/822 , H01L27/04 , H03B5/32 , H03L1/02
CPC分类号： G04G99/006 , G04G3/00 , G04G3/025

5. 发明专利

JPS602635B2 失效
公开(公告)号：JPS602635B2
公开(公告)日：1985-01-23
申请号：JP764276
申请日：1976-01-27
申请人： SUWA SEIKOSHA KK , SHIMAUCHI SEIKI KK
发明人： TOYODA HIROSHI , ASAKAWA TATSUJI
IPC分类号： G04C9/08 , G04C10/04 , G04G5/00 , G04G21/00

6. 发明专利

JPS5719676A VOLTAGE DETECTING CIRCUIT 失效
公开(公告)号：JPS5719676A
公开(公告)日：1982-02-01
申请号：JP8404081
申请日：1981-06-01
申请人： SUWA SEIKOSHA KK
发明人： ASAKAWA TATSUJI
IPC分类号： G01R19/165
摘要： PURPOSE:To provide a voltage detecting circuit having simplicity, high-resolution, and thermal compensation by connecting the input of a voltage comparator to a part of the resistor provided with the thermal characteristics capable of correcting the thermal characteristics of an FET. CONSTITUTION:In order to compensate the thermal characteristics of a P-channel transistor TR32 as a voltage level corrector by means of the FET, a circuit provided with diffusion resistors of N and P types, a resistor 33 made as a monolithic device in an IC and placed in front of a resistor which is connected to any outside parts, one or more of mutual supplemental type invertors as a voltage comparator connected to the diffusion resistors so as to improve the voltage detection resolution, wherein a channel length of the first stage invertor of the mutual supplemental type is so extended as to improve its sensitivity. Thereby, simplicity, high resolving power and temp. compensation of the device are ensured, as well as improving IC designing, its productivity and yield.

7. 发明专利

JPS5714786A ELECTRONIC TIMEPIECE EQUIPPED WITH TEMPERATURE DETECTOR 失效
公开(公告)号：JPS5714786A
公开(公告)日：1982-01-26
申请号：JP8893380
申请日：1980-06-30
申请人： SUWA SEIKOSHA KK
发明人： OGUCHI TATEAKI , TAKAGI MICHIAKI , ASAKAWA TATSUJI , MISAWA TOSHIYUKI
IPC分类号： G01K7/00 , G04F5/06 , G04G3/04 , G04G99/00
摘要： PURPOSE:To obtain high reliability temperature compensation by restraining an increase of circuit construction elements, by making semiconductor elements, etc. inside IC to temperature detection elements together with making a regulation counter for initial scaling to common use with the counter of frequency divider. CONSTITUTION:Scanning a group PROM21 through a counter 20, initial scaling adjustment caused by blow out of fuse of a group 21 is performed by using the output of a resistor 34 for temperature detection and the output of transmission gates T1... which incorporate a MOS transistor for temperature detection of different conductances by connecting to respective resistors R1.... Then, temperature characteristic of a crystal oscillator memorized by Cell C1... is adjusted according to the uneveness of the resistor 34. After that, according to the scanning of gates T1... through a binary counter 18, semiconductor elements are utilized as temperature detection elements and the high reliable temperature compensation is obtained by the circuit with a small number of construction elements used in common with the counter of frequency divider.

8. 发明专利

JPS578480A TEMPERATURE COMPENSATING ELECTRONIC TIMEPIECE 失效
公开(公告)号：JPS578480A
公开(公告)日：1982-01-16
申请号：JP8304980
申请日：1980-06-19
申请人： SUWA SEIKOSHA KK
发明人： TAKAGI MICHIAKI , ASAKAWA TATSUJI , MISAWA TOSHIYUKI
IPC分类号： G04G3/00 , G04C10/00 , G04G3/02 , H03B5/32 , H03L1/02
摘要： PURPOSE:To easily adjust a pace, and also to elevate the reliability, by shifting the timing of an operation time of a temperature detecting circuit part, so that it does not coincidence with an operation time of a circuit which consumes a large current instantaneously, such as a driving circuit of a motor, a lamp lighting circuit, etc. CONSTITUTION:A block diagram of an IC built-in temperature detecting circuit part which is provided on an electronic timepiece is shown in one point chain line 2000, and a block diagram showing one example of the constitution part required for the electronic timepiece, except a temperature detecting circuit part is shown in one point chain line 2100. A frequency divider 219 generates a reference clock signal for deciding a repeated period of a logical brake operation. A logical brake timing controlling circuit 216 receives a signal of a frequency divider 219 for generating a logical brake reference clock, sends an operation start signal to the temperature detecting circuit part, and also receives an end signal of a temperature detecting operation. Furthermore, the controlling circuit 216 sends a signal which is operated for alternatively selecting a logical brake data C of temperature compensation or a logical brake data D of an oscillator, to a latch circuit or a switching circuit 215.

9. 发明专利

JPS5696257A VOLTAGE DETECTING CIRCUIT 失效
公开(公告)号：JPS5696257A
公开(公告)日：1981-08-04
申请号：JP8497680
申请日：1980-06-23
申请人： SUWA SEIKOSHA KK , SHIMAUCHI SEIKI KK
发明人： KITANO MASUO , ASAKAWA TATSUJI
IPC分类号： G01R19/165 , G01R19/32
摘要： PURPOSE:To obtain a voltage detecting circuit to be used to indicate the life of the batteries of electronic timepieces by giving to a complementary inverter as comparator the same characteristic as the temperature characteristic of a transistor TR as voltage level converter. CONSTITUTION:A detecting circuit is made by longitudinally connecting a bias circuit, a voltage level convertor and a comparator. The same direction temperature characteristic as that of a P-channel transistor TR15 as voltage level comparator is given to a complementary invertor consisting of a P-channel TR16 and an N- channel TR17 as comparator. Thereby, the temperature compensation of detection voltage is possible so that a low power voltage detecting circuit available for indicating the life of the batteries of electronic timepieces can be obtained.

10. 发明专利

JPS5693174A MOS RANDOM ACCESS MEMORY 失效
公开(公告)号：JPS5693174A
公开(公告)日：1981-07-28
申请号：JP16869979
申请日：1979-12-25
申请人： SUWA SEIKOSHA KK
发明人： KATSUYAMA YASUO , ASAKAWA TATSUJI
IPC分类号： G11C11/417 , G11C7/00 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/78
摘要： PURPOSE:To realize a high-speed MOSRAM, by controlling the write control transistor via a controll circuit and then separating the extra capacity of the writing bus line from the digit line during the reading. CONSTITUTION:When the reading mode is secured with the read/write signal R/W turning to a high level, the output is inverted to a low level for the control circuit 37 consisting of the NOR gate or the like in which the output of the sense circuit S1 is applied to one input terminal. Then the write control transistor 35 and 36 are turned on. As a result, the extra capacity of the writing bus line is separated from the digit line D1 or the like. Thus a high-speed MOSRAM is obtained without any reduction of the reading speed of the MOSRAM cell M1 and without impairing the merits of high density and large capacity.

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